Display device

Patent metadata

Field	Value
Publication number	US-2016246090-A1
Application number	US-201615144916-A
Country	US
Kind code	A1
Filing date	May 3, 2016
Priority date	Jul 20, 2012
Publication date	Aug 25, 2016
Grant date	—

Abstract

To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

First claim

1 . A display semiconductor device comprising:
a semiconductor layer comprising a channel formation region; a gate electrode overlapping with the channel formation region; a first inorganic insulating film over the semiconductor layer and the gate electrode; an organic insulating film over the first inorganic insulating film; and a second inorganic insulating film over and in contact with the organic insulating film, wherein the organic insulating film comprises a region that does not overlap with the second inorganic insulating film and overlaps with the first inorganic insulating film and the semiconductor layer.

2 . The semiconductor device according to claim 1 , wherein the gate electrode is located under the semiconductor layer.

3 . The semiconductor device according to claim 1 , wherein the semiconductor layer is an oxide semiconductor layer.

4 . The semiconductor device according to claim 3 , wherein the oxide semiconductor layer comprises an In—Ga—Zn oxide.

5 . The semiconductor device according to claim 1 , wherein the first inorganic insulating film is in contact with the second inorganic insulating film.

6 . The semiconductor device according to claim 1 , wherein the second inorganic insulating film comprises silicon and nitrogen.

7 . The semiconductor device according to claim 1 , wherein the organic insulating film comprises an organic resin.

8 . A semiconductor device comprising:
an oxide semiconductor layer comprising a channel formation region; a gate electrode overlapping with the channel formation region; a first conductive layer over and electrically connected to the oxide semiconductor layer; a second conductive layer over and electrically connected to the oxide semiconductor layer; a first inorganic insulating film over the oxide semiconductor layer, the gate electrode, the first conductive layer and the second conductive layer; an organic insulating film over the first inorganic insulating film; a first transparent conductive layer over the organic insulating film; a second inorganic insulating film over and in contact with the organic insulating film, the second inorganic insulating film being located over the first transparent conductive layer; a second transparent conductive layer over the first transparent conductive layer with the second inorganic insulating film interposed therebetween; and a liquid crystal layer over the first transparent conductive layer and the second transparent conductive layer, wherein the first transparent conductive layer is a common electrode, wherein the second transparent conductive layer is a pixel electrode electrically connected to the oxide semiconductor layer through the second conductive layer, and wherein the organic insulating film comprises a region that does not overlap with the second inorganic insulating film, the first transparent conductive layer and the second transparent conductive layer and overlaps with the second conductive layer, the first inorganic insulating film and the oxide semiconductor layer.

9 . The semiconductor device according to claim 8 , wherein the gate electrode is located under the oxide semiconductor layer.

10 . The semiconductor device according to claim 8 , wherein the oxide semiconductor layer comprises an In—Ga—Zn oxide.

11 . The semiconductor device according to claim 8 , wherein the first inorganic insulating film is in contact with the second inorganic insulating film.

12 . The semiconductor device according to claim 8 , wherein the second inorganic insulating film comprises silicon and nitrogen.

13 . The semiconductor device according to claim 8 , wherein the organic insulating film comprises an organic resin.

14 . A semiconductor device comprising:
an oxide semiconductor layer comprising a channel formation region; a gate electrode overlapping with the channel formation region; a first conductive layer over and electrically connected to the oxide semiconductor layer; a second conductive layer over and electrically connected to the oxide semiconductor layer; a first inorganic insulating film over the oxide semiconductor layer, the gate electrode, the first conductive layer and the second conductive layer; an organic insulating film over the first inorganic insulating film; a first transparent conductive layer over the organic insulating film; a second inorganic insulating film over and in contact with the organic insulating film, the second inorganic insulating film being located over the first transparent conductive layer; a second transparent conductive layer over the first transparent conductive layer with the second inorganic insulating film interposed therebetween; and a liquid crystal layer over the first transparent conductive layer and the second transparent conductive layer, wherein the first transparent conductive layer is a common electrode, wherein the second transparent conductive layer is a pixel electrode electrically connected to the oxide semiconductor layer through the second conductive layer, wherein the organic insulating film comprises a region that does not overlap with the second inorganic insulating film, the first transparent conductive layer and the second transparent conductive layer and overlaps with the second conductive layer, the first inorganic insulating film and the oxide semiconductor layer, and wherein the oxide semiconductor layer comprises a nanocrystalline oxide semiconductor.

15 . The semiconductor device according to claim 14 , wherein the gate electrode is located under the oxide semiconductor layer.

16 . The semiconductor device according to claim 14 , wherein the oxide semiconductor layer comprises an In—Ga—Zn oxide.

17 . The semiconductor device according to claim 14 , wherein the first inorganic insulating film is in contact with the second inorganic insulating film.

18 . The semiconductor device according to claim 14 , wherein the second inorganic insulating film comprises silicon and nitrogen.

19 . The semiconductor device according to claim 14 , wherein the organic insulating film comprises an organic resin.

Assignees

• Semiconductor Energy Lab

Inventors

• Yokoyama Masatoshi
• Komori Shigeki
• Sato Manabu
• Okazaki Kenichi
• Yamazaki Shunpei

Classifications

• G02F2202/10

  semiconductor · CPC title

• G02F1/136277

  formed on a semiconductor substrate, e.g. of silicon · CPC title

• G02F2202/02

  organic material · CPC title

• G02F1/136227 Primary

  Through-hole connection of the pixel electrode to the active element through an insulation layer · CPC title

• G02F1/134309

  characterised by their geometrical arrangement · CPC title