Nitride semiconductor light-emitting diode
US-2015333215-A1 · Nov 19, 2015 · US
US2016240732A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016240732-A1 |
| Application number | US-201615045264-A |
| Country | US |
| Kind code | A1 |
| Filing date | Feb 17, 2016 |
| Priority date | Feb 17, 2015 |
| Publication date | Aug 18, 2016 |
| Grant date | — |
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A light emitting component includes an epitaxial structure, an adhesive layer, a first reflective layer, a second reflective layer, a block layer, a first electrode and a second electrode. The epitaxial structure includes a substrate, a first semiconductor layer, a light emitting layer and a second semiconductor layer. The adhesive layer is disposed on the second semiconductor layer of the epitaxial structure. The first reflective layer is disposed on the adhesive layer. The second reflective layer is disposed on the first reflective layer and extended onto the adhesive layer. A projection area of the second reflective layer is larger than a projection area of the first reflective layer. The block layer is disposed on the second reflective layer. The first electrode is electrically connected to the first semiconductor layer. The second electrode is electrically connected to the second semiconductor layer.
Opening claim text (preview).
What is claimed is: 1 . A light emitting component comprising: an epitaxial structure comprising a substrate, a first semiconductor layer, a light emitting layer and a second semiconductor layer; an adhesive layer disposed on the second semiconductor layer of the epitaxial structure; a first reflective layer disposed on the adhesive layer; a second reflective layer disposed on the first reflective layer and extended onto the adhesive layer, a direction from the second reflective layer to the epitaxial structure being defined as a projection direction, a projection area of the second reflective layer in the projection direction being larger than a projection area of the first reflective layer in the projection direction; a block layer disposed on the second reflective layer; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the second semiconductor layer. 2 . The light emitting component of claim 1 , wherein a material of the first reflective layer is silver or silver alloy, and a material of the second reflective layer is non-silver metal, non-silver alloy or essentially consists of multiple metal layers. 3 . The light emitting component of claim 1 , wherein a material of the first reflective layer is aluminum or aluminum alloy, and a material of the second reflective layer is non-silver metal, non-silver alloy or essentially consists of multiple insulating layers. 4 . The light emitting component of claim 1 , wherein a reflectance of the second reflective layer is larger than a reflectance of the block layer. 5 . The light emitting component of claim 1 , wherein a reflectance of the second reflective layer is larger than or equal to 80%. 6 . The light emitting component of claim 1 , wherein a material of the block layer is platinum, gold, wolfram, titanium or titanium-tungsten alloy. 7 . The light emitting component of claim 1 , wherein the adhesive layer is a metal film or a metal oxide layer. 8 . The light emitting component of claim 1 , wherein a side surface of the second reflective layer and a side surface of the block layer are planar. 9 . The light emitting component of claim 8 , wherein the side surface of the second reflective layer, the side surface of the block layer and a side surface of the adhesive layer are planar. 10 . The light emitting component of claim 1 , wherein the projection area of the second reflective layer in the projection direction is larger than a projection area of the adhesive layer in the projection direction.
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