Vertical transistor and local interconnect structure

Patent metadata

Field	Value
Publication number	US-2016240665-A1
Application number	US-201514623843-A
Country	US
Kind code	A1
Filing date	Feb 17, 2015
Priority date	Feb 17, 2015
Publication date	Aug 18, 2016
Grant date	—

Abstract

A first patterned stack and a second patterned stack are formed over a substrate, each of which includes a bottom semiconductor layer, a bottom dielectric spacer layer, a conductive material layer, and a top dielectric spacer layer. Gate dielectrics and vertical semiconductor portions are sequentially formed on each patterned stack. Vertical semiconductor portions are removed from around the second patterned stack, while masked around the first patterned stack. Electrical dopants are introduced to top regions and bottom regions of the remaining vertical semiconductor portions to form a vertical switching device that includes the first patterned stack, while the second patterned stack functions as a horizontal interconnect structure. The vertical switching device can be a transistor or a gated diode.

First claim

What is claimed is:

1 . A semiconductor structure comprising a vertical switching device and a horizontal interconnect structure that are located on a substrate, wherein:
the vertical switching device comprises:
a gate electrode laterally contacted by a pair of gate dielectrics;
a pair of semiconductor channels contacting a respective gate dielectric among the pair of gate dielectrics;
a pair of top doped semiconductor regions adjoined to a respective top portion of the pair of semiconductor channels; and
a bottom doped semiconductor region contacting lower portions of outer sidewalls of the pair of gate dielectrics, and adjoined to bottom portions of the pair of semiconductor channels,
and the horizontal interconnect structure comprises a conductive material portion having a top surface that is coplanar with a top surface of the gate electrode, having a bottom surface that is coplanar with a bottom surface of the gate electrode, and comprising a same material as the gate electrode.

2 . The semiconductor structure of claim 1 , wherein outer sidewalls of the pair of semiconductor channels, outer sidewalls of the pair of top doped semiconductor regions, and outer sidewalls of the bottom doped semiconductor region are located within a pair of vertical planes.

3 . The semiconductor structure of claim 1 , wherein outer sidewalls of the bottom doped semiconductor region are adjoined to a top surface of a metallic material layer located on, or within, a substrate.

4 . The semiconductor structure of claim 1 , further comprising:
a bottom dielectric spacer contacting a bottom surface of the gate electrode and lower portions of inner sidewalls of the pair of gate dielectrics; and a top dielectric spacer contacting a top surface of the gate electrode and portions of the inner sidewalls of the pair of gate dielectrics.

5 . The semiconductor structure of claim 1 , wherein the horizontal interconnect structure further comprises:
a pair of dielectric material portions contacting sidewalls of the conductive material portion and having a same composition as the pair of gate dielectrics; and a dielectric material layer contacting outer sidewalls of the pair of dielectric material portions.

6 . The semiconductor structure of claim 5 , further comprising a doped semiconductor portion underlying the conductive material portion, having a same width as a lateral distance between outer sidewalls of the pair of dielectric material portions, and comprising a same semiconductor material as the bottom doped semiconductor region, wherein the doped semiconductor portion contacts the dielectric material layer.

7 . The semiconductor structure of claim 5 , wherein:
a bottom surface of the bottom dielectric spacer contacts a top surface of the bottom doped semiconductor region; sidewalls of the bottom dielectric spacer contacts the pair of gate dielectrics; and sidewalls of the top dielectric spacer contact the pair of gate dielectrics.

8 . The semiconductor structure of claim 7 , further comprising:
a first dielectric cap portion comprising a dielectric material, contacting a top surface of the top dielectric spacer, and contacting upper portions of the pair of gate dielectrics; and a second dielectric cap portion comprising the dielectric material of the first dielectric cap portion, overlying the conductive material portion, and having a top surface that is coplanar with a top surface of the first dielectric cap portion and a top surface of the dielectric material layer.

9 . The semiconductor structure of claim 5 , further comprising another dielectric material layer that contacts outer sidewalls of the pair of semiconductor channels, outer sidewalls of the pair of top doped semiconductor regions, and outer sidewalls of the bottom doped semiconductor region.

10 . The semiconductor structure of claim 1 , further comprising an array of memory devices overlying the vertical switching device, wherein the vertical switching device is an access transistor for an electrical node of a memory device within the array.

11 . The semiconductor structure of claim 1 , wherein the pair of top doped semiconductor regions and the bottom doped semiconductor region are doped with electrical dopants of a same conductivity type.

12 . The semiconductor structure of claim 1 , wherein the pair of top doped semiconductor regions and the bottom doped semiconductor region are doped with electrical dopants of opposite conductivity types.

13 . A semiconductor structure comprising:
a gate electrode laterally contacted by a pair of gate dielectrics; a pair of semiconductor channels contacting a respective gate dielectric among the pair of gate dielectrics; a pair of top doped semiconductor regions adjoined to a respective top portion of the pair of semiconductor channels; a bottom doped semiconductor region contacting lower portions of outer sidewalls of the pair of gate dielectrics, and adjoined to bottom portions of the pair of semiconductor channels; and a metallic material layer contacting a bottom surface of the bottom doped semiconductor region and located on, or within, a substrate,
wherein:
outer sidewalls of the pair of semiconductor channels, outer sidewalls of the pair of top doped semiconductor regions, and outer sidewalls of the bottom doped semiconductor region are located within a pair of vertical planes; and
the outer sidewalls of the bottom doped semiconductor region are adjoined to a top surface of the metallic material layer.

14 . The semiconductor structure of claim 13 , further comprising:
a bottom dielectric spacer contacting a bottom surface of the gate electrode and lower portions of inner sidewalls of the pair of gate dielectrics; and a top dielectric spacer contacting a top surface of the gate electrode and portions of the inner sidewalls of the pair of gate dielectrics. wherein: a bottom surface of the bottom dielectric spacer contacts a top surface of the bottom doped semiconductor region; sidewalls of the bottom dielectric spacer contacts the pair of gate dielectrics; and sidewalls of the top dielectric spacer contact the pair of gate dielectrics.

15 . The semiconductor structure of claim 13 , further comprising a first dielectric material layer comprising a dielectric material, contacting outer sidewalls of the pair of top doped semiconductor material portions, and having a top surface that is coplanar with top surfaces of the pair of top doped semiconductor regions.

16 . The semiconductor structure of claim 15 , further comprising a horizontal interconnect structure that comprises:
a conductive material portion having a top surface that is coplanar with a top surface of the gate electrode, having a bottom surface that is coplanar with a bottom surface of the gate electrode, and comprising a same material as the gate electrode; a pair of dielectric material portions contacting sidewalls of the conductive material portion and having a same composition as the pair of gate dielectrics; and a second dielectric material layer contacting outer sidewalls of the pair of dielectric material portions.

17 . The semiconductor structure of claim 16 , further comprising a dielectric cap portion overlying the conductive material portion and having a top surface that is coplanar with a top surface of the second dielectric material layer.

18 . The semiconductor structure of claim 15 , further comprising a doped semiconductor portion having a same width as a lateral distance between outer sidewalls of the pair of dielectr

Assignees

• Sandisk 3D Llc

Inventors

• Chen Yung-Tin
• Zhou Guangle
• Petti Christopher

Classifications

• H10D86/201

  the substrates comprising an insulating layer on a semiconductor body, e.g. SOI (H10D86/40 take precedence) · CPC title

• H10D86/01

  Manufacture or treatment · CPC title

• H10D84/038

  using silicon technology, e.g. SiGe · CPC title

• H10D84/016 Primary

  the components including vertical IGFETs · CPC title

• H10D64/512

  Disposition of the gate electrodes, e.g. buried gates · CPC title