Power package lid

Patent metadata

Field	Value
Publication number	US-2016240511-A1
Application number	US-201615140928-A
Country	US
Kind code	A1
Filing date	Apr 28, 2016
Priority date	Jun 2, 2014
Publication date	Aug 18, 2016
Grant date	—

Abstract

The present disclosure relates to a ring-frame power package. In this regard, the ring-frame power package includes a thermal carrier and a ring structure. The thermal carrier has a carrier surface. The ring structure includes a ring body that is disposed over the carrier surface of the thermal carrier so that a portion of the carrier surface is exposed through an interior opening of the ring body. The ring-frame power package also includes a power package lid that is disposed over the ring body. The power package lid includes a cavity in communication with the interior opening of the ring body. In this manner, the power package lid covers and protects semiconductor devices and corresponding wires encased by the ring-frame power package.

First claim

What is claimed is:

1 . A ring-frame power package comprising:
a thermal carrier having a carrier surface; and a ring structure residing on the carrier surface of the thermal carrier, and comprising a ring body, wherein a portion of the carrier surface of the thermal carrier is exposed through an interior opening of the ring body; and a power package lid residing on the ring body and having a cavity in communication with the interior opening of the ring body.

2 . The ring-frame power package of claim 1 wherein the power package lid is formed as a solid structure.

3 . The ring-frame power package of claim 2 wherein the power package lid is formed from an organic material.

4 . The ring-frame power package of claim 3 wherein the organic material is selected from the group consisting of Isola 370HR and Isola 300MD.

5 . The ring-frame power package of claim 2 wherein the power package lid is formed from a polyimide material.

6 . The ring-frame power package of claim 5 wherein the polyimide material comprises Isola P95.

7 . The ring-frame power package of claim 1 wherein the cavity has a depth less than a thickness of the power package lid.

8 . The ring-frame power package of claim 7 wherein the thickness of the power package lid is approximately between 1.2 mm and 2.4 mm.

9 . The ring-frame power package of claim 8 wherein the depth of the cavity is approximately between 15% and 90% of the thickness of the power package lid.

10 . The ring-frame power package of claim 1 wherein the power package lid further comprises a plurality of cavities in communication with the interior opening of the ring body.

11 . The ring-frame power package of claim 10 wherein each cavity of the plurality of cavities has a depth less than a thickness of the power package lid.

12 . The ring-frame power package of claim 11 wherein the thickness of the power package lid is approximately between 1.2 mm and 2.4 mm.

13 . The ring-frame power package of claim 12 wherein the depth of each cavity of the plurality of cavities is approximately between 15% and 90% of the thickness of the power package lid.

14 . The ring-frame power package of claim 1 wherein the power package lid is attached to the ring body via a non-conductive epoxy.

15 . The ring-frame power package of claim 14 wherein the non-conductive epoxy comprises Ablebond 84-3.

16 . The ring-frame power package of claim 1 wherein the ring structure further comprises a plurality of interconnect tabs that extend outward from an outer periphery of the ring body, wherein each interconnect tab of the plurality of interconnect tabs comprises:
a top plated area that covers at least a portion of a top surface of a corresponding interconnect tab and a corresponding contact portion of the ring body; and
a bottom plated area that covers at least a portion of a bottom surface of the corresponding interconnect tab wherein the top plated area and the bottom plated area are electrically coupled.

17 . The ring-frame power package of claim 16 further comprising one or more semiconductor devices on the portion of the carrier surface of the thermal carrier that is exposed through the interior opening of the ring body.

18 . The ring-frame power package of claim 17 wherein the power package lid is formed as a solid structure.

19 . The ring-frame power package of claim 18 wherein the power package lid is formed from an organic material.

20 . The ring-frame power package of claim 16 wherein the cavity has a depth less than a thickness of the power package lid.

Assignees

• Triquint Semiconductor Inc

Inventors

• Dry Robert Charles
• Jones Steve
• Fain Jonathan

Classifications

• H10W90/755

  between a chip and a laterally-adjacent insulating package substrate, interpose or RDL · CPC title

• H10W90/753

  between laterally-adjacent chips · CPC title

• H10W90/736

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W76/60

  Seals · CPC title