Interconnect structures and methods of formation

Patent metadata

Field	Value
Publication number	US-2016240483-A1
Application number	US-201615041454-A
Country	US
Kind code	A1
Filing date	Feb 11, 2016
Priority date	Feb 13, 2015
Publication date	Aug 18, 2016
Grant date	—

Abstract

Interconnect structures and methods of formation of such interconnect structures are provided herein. In some embodiments, a method of forming an interconnect includes: depositing a silicon-aluminum oxynitride (SiAlON) layer atop a first layer of a substrate, wherein the first layer comprises a first feature filled with a first conductive material; depositing a dielectric layer over the silicon-aluminum oxynitride (SiAlON) layer; and forming a second feature in the dielectric layer and the silicon-aluminum oxynitride (SiAlON) layer to expose the first conductive material.

First claim

1 . A method of forming an interconnect, comprising:
depositing a silicon-aluminum oxynitride (SiAlON) layer atop a first layer of a substrate, wherein the first layer comprises a first feature filled with a first conductive material; depositing a dielectric layer over the silicon-aluminum oxynitride (SiAlON) layer; and forming a second feature in the dielectric layer and the silicon-aluminum oxynitride (SiAlON) layer to expose the first conductive material.

2 . The method of claim 1 , wherein depositing the silicon-aluminum oxynitride (SiAlON) layer comprises:
sputtering an aluminum target; and sputtering a silicon target.

3 . The method of claim 2 , further comprising:
simultaneously sputtering the aluminum target and the silicon target in a process chamber using a process gas comprising oxygen (O 2 ), nitrogen (N 2 ) and argon (Ar).

4 . The method of claim 2 , further comprising:
sputtering the aluminum target in a first process chamber using a first process gas; transferring the substrate to a second process chamber; and sputtering the silicon target in the second process chamber using a second process gas.

5 . The method of claim 4 , wherein the first process gas comprises nitrogen (N 2 ) and argon (Ar) and the second process gas comprises one of: oxygen (O 2 ) and argon (Ar); or oxygen (O 2 ), nitrogen (N 2 ), and argon (Ar).

6 . The method of claim 4 , wherein the first process gas comprises oxygen (O 2 ) and argon (Ar) and the second process gas comprises one of: nitrogen (N 2 ) and argon (Ar); or oxygen (O 2 ), nitrogen (N 2 ), and argon (Ar).

7 . The method of claim 4 , wherein the first process gas comprises oxygen (O 2 ), nitrogen (N 2 ), and argon (Ar) and the second process gas comprises one of: oxygen (O 2 ), nitrogen (N 2 ), and argon (Ar); nitrogen (N 2 ) and argon (Ar); oxygen (O 2 ) and argon (Ar); or only argon (Ar).

8 . The method of claim 1 , wherein depositing the silicon-aluminum oxynitride (SiAlON) layer further comprises sputtering a silicon-aluminum target using a process gas comprising nitrogen (N 2 ), oxygen (O 2 ), and argon (Ar).

9 . The method of claim 8 , wherein nitrogen is provided at a flow rate of up to about 100 sccm, oxygen is provided at a flow rate of about 1 sccm to about 4 sccm, and argon is provided at a flow rate of up to about 25 sccm.

10 . The method of claim 1 , wherein depositing the silicon-aluminum oxynitride (SiAlON) layer further comprises sputtering a silicon aluminum oxynitride (SiAlON) target using a process gas comprising argon (Ar).

11 . The method of claim 1 , wherein the silicon-aluminum oxynitride (SiAlON) layer is deposited to a thickness of about 40 to about 80 angstroms.

12 . The method of claim 1 , wherein forming the second feature in the dielectric layer and the silicon-aluminum oxynitride (SiAlON) layer further comprises:
depositing a photoresist layer atop the dielectric layer; patterning the photoresist layer; etching the dielectric layer to a top surface of the silicon-aluminum oxynitride (SiAlON) layer; and etching the silicon-aluminum oxynitride (SiAlON) layer to expose the first conductive material.

13 . The method of claim 12 , further comprising etching the dielectric layer using a fluorine-containing gas.

14 . The method of claim 12 , further comprising etching the silicon-aluminum oxynitride (SiAlON) layer using a wet etch process.

15 . The method of claim 1 , further comprising depositing a second conductive material to fill the second feature.

16 . An interconnect, comprising:
a substrate comprising a first dielectric layer having a first feature formed in the first dielectric layer, wherein the first feature is filled with a first conductive material; a silicon aluminum oxynitride (SiAlON) layer disposed atop the first dielectric layer; a second dielectric layer disposed over the silicon aluminum oxynitride (SiAlON) layer; a second feature formed through the second dielectric layer and the silicon aluminum oxynitride (SiAlON) layer and aligned with the first feature; and a second conductive material filling the second feature to form a conductive pathway from the first feature to the second feature.

17 . The interconnect of claim 16 , wherein a thickness of the silicon aluminum oxynitride (SiAlON) layer is about 40 to about 80 angstroms.

18 . The interconnect of claim 16 , wherein the first conductive material and second conductive material are copper.

19 . A computer readable medium, having instructions stored thereon which, when executed, cause a process chamber to perform a method of forming an interconnect, the method comprising:
depositing a silicon-aluminum oxynitride (SiAlON) layer atop a first layer of a substrate, wherein the first layer comprises a first feature filled with a first conductive material; depositing a dielectric layer over the silicon-aluminum oxynitride (SiAlON) layer; and forming a second feature in the dielectric layer and the silicon-aluminum oxynitride (SiAlON) layer to expose the first conductive material.

20 . The computer readable medium of claim 19 , wherein the silicon-aluminum oxynitride (SiAlON) layer is deposited to a thickness of about 40 to about 80 angstroms.

Assignees

• Applied Materials Inc

Inventors

• Cheng Yana
• Cao Yong
• Guggilla Srinivas
• Kesapragada Sree Rangasai
• Tang Xianmin
• Padhi Deenesh

Classifications

• H10P14/6929

  the material containing aluminium, e.g. AlSiOx · CPC title

• H10P14/6329

  using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition · CPC title

• H10W20/081

  by forming openings in the dielectric parts · CPC title

• H10W20/077

  on sidewalls or on top surfaces of conductors (H10W20/076 takes precedence) · CPC title

• H10W20/075

  of multilayered thin functional dielectric layers · CPC title