Sputtering target and method for producing same

US2016237551A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2016237551-A1
Application numberUS-201315027436-A
CountryUS
Kind codeA1
Filing dateOct 7, 2013
Priority dateOct 7, 2013
Publication dateAug 18, 2016
Grant date

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

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Provided are a sputtering target composed of a Cu—Ga sintered compact that has a further reduced oxygen content and can suppress abnormal discharges, and a method for producing the same. The sintered compact has a component composition containing a Ga content of 20 at % or higher and less than 30 at % with the balance being Cu and inevitable impurities, and has an oxygen content of 100 ppm or lower and an average grain size of 100 μm or less, and exhibits the diffraction peaks assigned to the γ and ζ phases of CuGa as observed in X-ray diffraction, wherein the main peak intensity of the diffraction peaks assigned to the ζ phase is 10% or higher relative to that of the diffraction peaks assigned to the γ phase.

First claim

Opening claim text (preview).

What is claimed is: 1 . A sputtering target composed of a sintered compact that has a component composition containing a Ga content of 20 at % or higher and less than 30 at % with the balance being Cu and inevitable impurities; an oxygen content of 100 ppm or lower; and an average grain size of 100 μm or less, and which exhibits the diffraction peaks assigned to the γ and ζ phases of CuGa as observed in X-ray diffraction, wherein the main peak intensity of the diffraction peaks assigned to the ζ phase is 10% or higher relative to that of the diffraction peaks assigned to the γ phase. 2 . A method for producing the sputtering target according to claim 1 , the method comprising a step of sintering a green compact consisting of a mixture of a pure Cu powder and a Cu—Ga alloy powder under atmospheric pressure by heating in a reducing atmosphere.

Assignees

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Classifications

  • Mixtures of metallic powders · CPC title

  • Plural materials · CPC title

  • Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy · CPC title

  • Alloys based on copper · CPC title

  • Copper · CPC title

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What does patent US2016237551A1 cover?
Provided are a sputtering target composed of a Cu—Ga sintered compact that has a further reduced oxygen content and can suppress abnormal discharges, and a method for producing the same. The sintered compact has a component composition containing a Ga content of 20 at % or higher and less than 30 at % with the balance being Cu and inevitable impurities, and has an oxygen content of 100 ppm or l…
Who is the assignee on this patent?
Mitsubishi Materials Corp
What technology area does this patent fall under?
Primary CPC classification C23C14/3414. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Thu Aug 18 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).