Filling material for three-dimensional mounting of semiconductor element

US2016237201A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2016237201-A1
Application numberUS-201415024910-A
CountryUS
Kind codeA1
Filing dateSep 25, 2014
Priority dateSep 27, 2013
Publication dateAug 18, 2016
Grant date

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

Provided are a filling component useful for the production of a thin, low-profile three-dimensional integrated semiconductor device via a COW process, and a curable composition for the formation of the filling component. The filling component according to the present invention for three-dimensional mounting of semiconductor elements is used to fill gaps between laterally adjacent semiconductor elements in the production of a three-dimensional integrated semiconductor device by stacking and integrating semiconductor elements. The filling component is a component that is polished and/or ground flat from the front side of semiconductor elements while gaps between the semiconductor elements are filled with the filling component.

First claim

Opening claim text (preview).

1 . A filling component for three-dimensional mounting of semiconductor elements, the filling component being used for filling gaps between laterally adjacent semiconductor elements in production of a three-dimensional integrated semiconductor device by stacking and integrating a plurality of semiconductor elements, the filling component being a component that is polished and/or ground flat from a front side of the semiconductor elements while the gaps between the semiconductor elements are filled with the filling component. 2 . The filling component according to claim 1 for three-dimensional mounting of semiconductor elements, wherein the filling component is a cured product of a curable composition comprising: an epoxide having a bisphenol skeleton; and a cationic-polymerization initiator. 3 . A curable composition for three-dimensional mounting of semiconductor elements, the curable composition being used for the formation of the filling component according to claim 1 for three-dimensional mounting of semiconductor elements, the curable composition comprising: an epoxide having a bisphenol skeleton; and a cationic-polymerization initiator, the curable composition being liquid at 25° C. 4 . The curable composition according to claim 3 for three-dimensional mounting of semiconductor elements, the curable composition further comprising a cycloaliphatic epoxide. 5 . The curable composition according to claim 3 for three-dimensional mounting of semiconductor elements, the curable composition further comprising at least one filler selected from the group consisting of inorganic fillers and organic fillers each having an average particle diameter of 0.05 to 1 μm. 6 . The curable composition according to claim 3 for three-dimensional mounting of semiconductor elements, the curable composition further comprising a silane coupling agent. 7 . A curable composition for three-dimensional mounting of semiconductor elements, the curable composition being used for the formation of the filling component according to claim 2 for three-dimensional mounting of semiconductor elements, the curable composition comprising: an epoxide having a bisphenol skeleton; and a cationic-polymerization initiator, the curable composition being liquid at 25° C. 8 . The curable composition according to claim 4 for three-dimensional mounting of semiconductor elements, the curable composition further comprising at least one filler selected from the group consisting of inorganic fillers and organic fillers each having an average particle diameter of 0.05 to 1 μm. 9 . The curable composition according to claim 4 for three-dimensional mounting of semiconductor elements, the curable composition further comprising a silane coupling agent. 10 . The curable composition according to claim 5 for three-dimensional mounting of semiconductor elements, the curable composition further comprising a silane coupling agent.

Assignees

Inventors

Classifications

  • Subject matter not provided for in other groups of this subclass · CPC title

  • the encapsulations exposing the passive side of the semiconductor body · CPC title

  • Connecting interconnections to insulating or insulated package substrates, interposers or redistribution layers · CPC title

  • of die-attach connectors · CPC title

  • On different surfaces · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US2016237201A1 cover?
Provided are a filling component useful for the production of a thin, low-profile three-dimensional integrated semiconductor device via a COW process, and a curable composition for the formation of the filling component. The filling component according to the present invention for three-dimensional mounting of semiconductor elements is used to fill gaps between laterally adjacent semiconductor …
Who is the assignee on this patent?
Daicel Corp
What technology area does this patent fall under?
Primary CPC classification H10W74/473. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Aug 18 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).