Power Conversion Device

Patent metadata

Field	Value
Publication number	US-2016234976-A1
Application number	US-201415025364-A
Country	US
Kind code	A1
Filing date	Oct 1, 2014
Priority date	Oct 7, 2013
Publication date	Aug 11, 2016
Grant date	—

Abstract

Size reduction of a power conversion device is intended. A power conversion device according to the present invention includes: a first power semiconductor module; a second semiconductor module; and a fixing member which fixes the first power semiconductor module, wherein the first power semiconductor module has a first power semiconductor device, a first case which houses the first power semiconductor device, and a first flange portion connected to the case, the second power semiconductor module has a second power semiconductor device, and a second case which houses the second power semiconductor device, the second case is connected to the first flange portion so as to provide a first flow path space for allowing a coolant to flow between the second case and the first case, and the first flange portion is fixed to the fixing member while supporting the first case and the second power semiconductor module.

First claim

1 . A power conversion device comprising:
a first power semiconductor module; a second semiconductor module; and a fixing member which fixes the first power semiconductor module, wherein the first power semiconductor module has a first power semiconductor device, a first case which houses the first power semiconductor device, and a first flange portion connected to the case, the second power semiconductor module has a second power semiconductor device, and a second case which houses the second power semiconductor device, the second case is connected to the first flange portion so as to provide a first flow path space for allowing a coolant to flow between the second case and the first case, and the first flange portion is fixed to the fixing member while supporting the first case and the second power semiconductor module.

2 . The power conversion device according to claim 1 , comprising:
a third power semiconductor module having a third power semiconductor device and a third case which houses the second power semiconductor device, wherein the third case is arranged to be opposed to the second case with the first case provided therebetween, the third case is further connected to the first flange portion so as to provide a second flow path space for allowing a coolant to flow between the third case and the first case, and the first flange portion is fixed to the fixing member while supporting the first case and the third power semiconductor module.

3 . The power conversion device according to claim 1 , wherein
the fixing member is a flow path-forming body which forms a flow path for allowing a coolant to flow, the flow path-forming body forms an opening connecting to the flow path, the first power semiconductor module and the second power semiconductor module are housed in the flow path as a result of blocking of the opening by the first flange, and the flow path is formed so as to provide a second flow path space at a position opposed to the first flow path space with the second power semiconductor module provided therebetween.

4 . The power conversion device according to claim 1 , wherein
the second power semiconductor module has a terminal for allowing current to flow or transmitting a control signal to the second power semiconductor device, the second case forms an opening portion from which the terminal protrudes outside the second case, the first flange portion forms a through hole through which the terminal passes, and an insulating resin material is arranged between an internal wall of the through hole and the terminal.

5 . The power conversion device according to claim 1 , wherein
the first case has a first fin, and a first fin base connected to the first fin, the second case has a second fin, and a second fin base connected to the second fin, the first fin is formed, in the first flow path space, to have a distal end portion located closer to the second fin base than a connection portion between the first fin and the first fin base, and the second fin is formed, in the first flow path space, to have a distal end portion located closer to the first fin base than a connection portion between the second fin and the second fin base.

6 . The power conversion device according to claim 5 , wherein
the first fin is configured to include a first line fin group aligned in a direction traversing a coolant flowing direction, the second fin is formed to have a width opposed to the coolant flowing direction larger than a distance between adjacent fins forming the first line fin group, and when projected from the coolant flowing direction, the second fin is arranged such that a projected part of the second fin overlaps a space between the adjacent fins forming the first line fin group.

7 . The power conversion device according to claim 6 , wherein
the first fin is configured to include a second line fin group aligned in a direction traversing the coolant flowing direction, the second line fin group is arranged such that a distance between the second line fin group and the first line fin group in the coolant flowing direction is larger than a width of the second fin along the coolant flowing direction, and an insertion direction of the second case for the connection to the first flange portion traverses the coolant flowing direction.

8 . The power conversion device according to claim 3 , wherein
the first case has a first fin arranged in the first flow path space, the second case has a plurality of second fins arranged separately in the first flow path space and the second flow path space, and the flow path-forming body has a protrusion portion protruding, in the second flow path space, toward the second case.

9 . The power conversion device according to claim 8 , wherein the protrusion portion is arranged such that when projected from a direction perpendicular to an electrode surface of the second power semiconductor device, a projected part of the protrusion portion overlaps with a projected part of the second power semiconductor device.

10 . The power conversion device according to claim 3 , wherein
the second case has a plurality of fins arranged separately in the first flow path space and the second flow path space, and the first case has no fin formed in the first flow path space.

11 . The power conversion device according to claim 10 , comprising:
a third power semiconductor module having a third power semiconductor device and a third case which houses the third power semiconductor device, wherein the third case is arranged to be opposed to the second case with the first case provided therebetween, the third case is further connected to the first flange portion so as to provide a third flow path space for allowing a coolant to flow between the third case and the first case, the first flange portion is fixed to the flow path-forming body while supporting the first case and the third power semiconductor module, the flow path is formed so as to provide a fourth flow path space at a position opposed to the third flow path space with the third power semiconductor module provided therebetween, the third case has a plurality of fins arranged separately in the third flow path space and the fourth flow path space, and the first case has no fin formed in the third flow path space.

12 . The power conversion device according to claim 3 , wherein
the first case has a first fin arranged in the first flow path space, the second case has a second fin arranged in the second flow path space, and the second case has no fin formed in the first flow path space.

13 . The power conversion device according to claim 1 , wherein
the second power semiconductor module has a terminal for allowing current to flow or transmitting a control signal to the second power semiconductor device, the second case forms an opening portion from which the terminal protrudes outside the second case, the first flange portion forms a through hole in which a part forming the opening portion of the second case fits, and the terminal protrudes to a side opposite to a side on which the second power semiconductor module is arranged, with the through hole provided therebetween.

Assignees

• Hitachi Automotive Systems Ltd

Inventors

• Shimura Takahiro
• Matsushita Akira
• Fujino Shinichi

Classifications

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W74/111

  the semiconductor body being completely enclosed · CPC title

• H10W90/00

  Package configurations · CPC title

• H10W40/778

  in encapsulations · CPC title

• H10W40/228

  the projecting parts being wire-shaped or pin-shaped · CPC title