Wavelength tunable laser device and optical coherence tomography apparatus

Patent metadata

Field	Value
Publication number	US-2016233644-A1
Application number	US-201615002390-A
Country	US
Kind code	A1
Filing date	Jan 20, 2016
Priority date	Feb 5, 2015
Publication date	Aug 11, 2016
Grant date	—

Abstract

A wavelength tunable laser device, including: a first reflector; a second reflector; an active layer formed between the first reflector and the second reflector; a quantum well structure layer that exhibits a quantum confined stark effect; and an electrode configured to apply a reverse bias voltage to the quantum well structure layer, wherein the active layer and the second reflector have a gap formed therebetween, the gap having a length to be changed to thereby sweep a resonance wavelength, and wherein the electrode is further configured to change application of the reverse bias voltage to be applied to the quantum well structure layer depending on the length of the gap when the resonance wavelength is swept.

First claim

What is claimed is:

1 . A wavelength tunable laser device, comprising:
a first reflector; a second reflector; an active layer formed between the first reflector and the second reflector; a quantum well structure layer that exhibits a quantum confined stark effect by a reverse bias voltage; and an electrode configured to apply the reverse bias voltage to the quantum well structure layer, wherein the active layer and the second reflector have a gap formed therebetween,
the gap having a length to be changed to thereby sweep a resonance wavelength, and
wherein the electrode is further configured to change application of the reverse bias voltage to be applied to the quantum well structure layer depending on the length of the gap when the resonance wavelength is swept.

2 . The wavelength tunable laser device according to claim 1 , wherein a voltage to be applied to the quantum well structure layer when the length of the gap has a value equal to or larger than a predetermined value is higher than a voltage to be applied to the quantum well structure layer when the length of the gap has a value smaller than the predetermined value.

3 . The wavelength tunable laser device according to claim 1 , wherein a voltage to be applied to the quantum well structure layer to reduce the length of the gap is higher than a voltage to be applied to the quantum well structure layer to increase the length of the gap.

4 . The wavelength tunable laser device according to claim 1 , wherein at least one of the first reflector and the second reflector comprises a distributed Bragg reflector obtained by alternately laminating a first layer and a second layer having a higher refractive index than the first layer.

5 . The wavelength tunable laser device according to claim 1 , wherein at least one of the first reflector and the second reflector comprises a high-index contrast subwavelength grating.

6 . The wavelength tunable laser device according to claim 1 , wherein the length of the gap is longer than 1.7 μm under a state in which an interval between the first reflector and the second reflector is not changed.

7 . The wavelength tunable laser device according to claim 1 , wherein the quantum well structure layer has a multiple quantum well structure.

8 . The wavelength tunable laser device according to claim 1 , further comprising a pair of electrodes configured to apply a voltage to the quantum well structure layer,
wherein the quantum well structure layer comprises a p-type semiconductor layer and an n-type semiconductor layer, and wherein one of the pair of electrodes is electrically connected to the p-type semiconductor layer, and another one of the pair of electrodes is electrically connected to the n-type semiconductor layer.

9 . The wavelength tunable laser device according to claim 1 ,
wherein the second reflector is caused to vibrate by applying an alternating voltage to a support portion configured to support the second reflector, and wherein the electrode is further configured to change the application of the reverse bias voltage to be applied to the quantum well structure layer so as to correspond to an amplitude change in the alternating voltage.

10 . The wavelength tunable laser device according to claim 1 , wherein a gain of the active layer at a wavelength shorter than a predetermined wavelength is larger than a gain of the active layer at a wavelength longer than the predetermined wavelength.

11 . The wavelength tunable laser device according to claim 1 , wherein an absorption edge of the quantum well structure layer falls on a wavelength side shorter than a shortest wavelength within a sweep range of the resonance wavelength when the electrode does not apply a reverse bias voltage to the quantum well structure layer.

12 . The wavelength tunable laser device according to claim 1 , wherein the electrode is further configured to apply a reverse bias voltage to the quantum well structure layer when an oscillation is caused at a wavelength longer than a predetermined wavelength.

13 . An optical coherence tomography apparatus, comprising:
a wavelength tunable laser device including:
a first reflector;
a second reflector;
an active layer formed between the first reflector and the second reflector;
a quantum well structure layer that exhibits a quantum confined stark effect by a reverse bias voltage; and
an electrode configured to apply the reverse bias voltage to the quantum well structure layer,
wherein the active layer and the second reflector have a gap formed therebetween,
the gap having a length to be changed to thereby sweep a resonance wavelength, and

wherein the electrode is further configured to change application of the reverse bias voltage to be applied to the quantum well structure layer so that a gain of a laser at the resonance wavelength becomes larger than a gain of the laser at a wavelength in another mode capable of causing an oscillation when the resonance wavelength is swept,
the optical coherence tomography apparatus further comprising: an interference optical system configured to cause light from the wavelength tunable laser device to branch off into irradiation light to be radiated to an object to be measured and reference light, and to generate coherent light with reflection light of the irradiation light radiated to the object to be measured and the reference light; a light detection unit configured to receive the coherent light; and an information acquisition unit configured to acquire information on the object to be measured based on a signal received from the light detection unit.

Assignees

• Canon Kk

Inventors

• Uchida Takeshi

Classifications

• G01B9/02091

  Tomographic interferometers, e.g. based on optical coherence · CPC title

• H01S5/1096 Primary

  in a single cavity · CPC title

• H01S5/125

  Distributed Bragg reflector [DBR] lasers · CPC title

• H01S5/34

  comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers (H01S5/36 takes precedence) · CPC title

• H01S5/1039

  Details on the cavity length · CPC title