Magnetic random access memory with multilayered seed structure
US-2015340598-A1 · Nov 26, 2015 · US
Synthetic antiferromagnet (saf) coupled free layer for perpendicular magnetic tunnel junction (p-mtj)
US2016233418A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016233418-A1 |
| Application number | US-201615133018-A |
| Country | US |
| Kind code | A1 |
| Filing date | Apr 19, 2016 |
| Priority date | Jul 1, 2014 |
| Publication date | Aug 11, 2016 |
| Grant date | — |
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Abstract
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A magnetic tunnel junction (MTJ) device in a magnetoresistive random access memory (MRAM) and method of making the same are provided to achieve a high tunneling magnetoresistance (TMR), a high perpendicular magnetic anisotropy (PMA), good data retention, and a high level of thermal stability. The MTJ device includes a first free ferromagnetic layer, a synthetic antiferromagnetic (SAF) coupling layer, and a second free ferromagnetic layer, where the first and second free ferromagnetic layers have opposite magnetic moments.
First claim
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What is claimed is: 1 . A method for making a magnetic tunnel junction (MTJ), the method comprising: forming a first free ferromagnetic layer having a first magnetic moment; forming a synthetic antiferromagnetic (SAF) coupling layer on the first free ferromagnetic layer; and forming a second free ferromagnetic layer on the SAF coupling layer, the second free ferromagnetic layer having a second magnetic moment opposite to the first magnetic moment of the first free ferromagnetic layer. 2 . The method of claim 1 , wherein forming the first free ferromagnetic layer comprises: epitaxially growing an iron-rich cobalt-iron-boron (Fe-rich CoFeB) layer on a barrier layer; annealing the Fe-rich CoFeB layer to form a crystalline Fe-rich CoFeB structure; forming an intermediate layer on the Fe-rich CoFeB layer, the intermediate layer comprising a material selected from the group consisting of cobalt-iron-boron-tantalum (CoFeBTa) and cobalt-iron-boron-hafnium (CoFeBHf); and forming a cobalt (Co) layer on the intermediate layer. 3 . The method of claim 1 , wherein forming the second free ferromagnetic layer comprises: forming a cobalt (Co) layer on the SAF coupling layer; and forming an iron-rich cobalt-iron-boron (Fe-rich CoFeB) layer on the Co layer. 4 . A method of making a magnetic tunnel junction (MTJ), the method comprising: forming a first free ferromagnetic layer having a first magnetic moment; forming a synthetic antiferromagnetic (SAF) coupling layer on the first free ferromagnetic layer, the SAF coupling layer comprising a material selected from the group consisting of ruthenium (Ru) and chromium (Cr); and forming a second free ferromagnetic layer on the SAF coupling layer, the second free ferromagnetic layer having a second magnetic moment opposite to the first magnetic moment of the first free ferromagnetic layer. 5 . The method of claim 4 , wherein forming the first free ferromagnetic layer comprises: epitaxially growing an iron-rich cobalt-iron-boron (Fe-rich CoFeB) layer on a barrier layer comprising magnesium oxide (MgO); annealing the Fe-rich CoFeB layer to form a crystalline Fe-rich CoFeB structure; forming an intermediate layer on the Fe-rich CoFeB layer, the intermediate layer comprising a material selected from the group consisting of cobalt-iron-boron-tantalum (CoFeBTa) and cobalt-iron-boron-hafnium (CoFeBHf); and forming a cobalt (Co) layer on the intermediate layer. 6 . The method of claim 4 , wherein forming the second free ferromagnetic layer comprises: forming a cobalt (Co) layer on the SAF coupling layer; and forming an iron-rich cobalt-iron-boron (Fe-rich CoFeB) on the Co layer.
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details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H01L43/10Primary
Electricity · mapped topic
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- What does patent US2016233418A1 cover?
- A magnetic tunnel junction (MTJ) device in a magnetoresistive random access memory (MRAM) and method of making the same are provided to achieve a high tunneling magnetoresistance (TMR), a high perpendicular magnetic anisotropy (PMA), good data retention, and a high level of thermal stability. The MTJ device includes a first free ferromagnetic layer, a synthetic antiferromagnetic (SAF) coupling …
- Who is the assignee on this patent?
- Qualcomm Inc
- What technology area does this patent fall under?
- Primary CPC classification H01L43/10. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Aug 11 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).