Semiconductor light emitting device and method for forming phosphor layer

Patent metadata

Field	Value
Publication number	US-2016233389-A1
Application number	US-201514835937-A
Country	US
Kind code	A1
Filing date	Aug 26, 2015
Priority date	Feb 10, 2015
Publication date	Aug 11, 2016
Grant date	—

Abstract

According to one embodiment, a semiconductor light emitting device includes a light emitting element and a phosphor layer provided on the light emitting element. The phosphor layer includes a plurality of phosphor particles and a plurality of inorganic particles having smaller sizes than the phosphor particles. The phosphor particles are bound together with aggregation of the inorganic particles and the phosphor particles.

First claim

What is claimed is:

1 . A semiconductor light emitting device comprising:
a light emitting element; and a phosphor layer provided on the light emitting element, and including a plurality of phosphor particles and a plurality of inorganic particles having smaller sizes than the phosphor particles, the phosphor particles being bound together with aggregation of the inorganic particles and the phosphor particles.

2 . The device according to claim 1 , wherein thermal conductivities of the inorganic particles are 20 W/m·K or more.

3 . The device according to claim 2 , wherein the inorganic particles primarily contain aluminum oxide, silicon nitride, or silicon carbide.

4 . The device according to claim 1 , wherein the phosphor layer includes no resin, but includes voids between the inorganic particles, and between the inorganic particles and the phosphor particles.

5 . The device according to claim 1 , further comprising a first inorganic film covering surfaces of the phosphor particles and surfaces of the inorganic particles.

6 . The device according to claim 5 , wherein a part of the first inorganic film is provided in gaps between the inorganic particles, and gaps between the inorganic particles and the phosphor particles, inside the surfaces of the phosphor particles and the surfaces of the inorganic particles.

7 . The device according to claim 5 , wherein the first inorganic film is a silicon oxide film.

8 . The device according to claim 1 , further comprising a resin provided in gaps between the inorganic particles, and gaps between the inorganic particles and the phosphor particles.

9 . The device according to claim 1 , further comprising a second inorganic film provided between the light emitting element and the phosphor layer.

10 . The device according to claim 1 , wherein no resin film is provided between the light emitting element and the phosphor layer.

11 . The device according to claim 1 , wherein no substrate is provided between the light emitting element and the phosphor layer.

12 . The device according to claim 1 , wherein a grain boundary exists between the inorganic particles.

13 . The device according to claim 1 , wherein Young's modulus of the inorganic particles is higher than Young's modulus of resin.

14 . The device according to claim 1 , wherein
the light emitting element includes a semiconductor layer and a resin layer supporting the semiconductor layer, and a side surface of the phosphor layer is aligned with a side surface of the resin layer.

15 . A method for forming a phosphor layer, comprising:
spraying a plurality of phosphor particles and a plurality of inorganic particles simultaneously or separately with a carrier gas onto a wafer including a light emitting element to form an aggregate of the phosphor particles and the inorganic particles on the wafer, the inorganic particles having smaller sizes than the phosphor particles.

16 . The method according to claim 15 , wherein
the light emitting element is grown on a substrate, and then the substrate is removed to expose a first surface of the light emitting element, and the aggregate is formed on the first surface.

17 . The method according to claim 15 , further comprising impregnating the aggregate with resin.

18 . A method for forming a phosphor layer, comprising:
supplying a solution onto a wafer including a light emitting element, the solution containing a solvent, a plurality of phosphor particles dispersed in the solvent, and a plurality of inorganic particles dispersed in the solvent, the inorganic particles having smaller sizes than the phosphor particle; and volatilizing the solvent to form an aggregate of the phosphor particles and the inorganic particles on the wafer.

19 . The method according to claim 18 , wherein
the light emitting element is grown on a substrate, and then the substrate is removed to expose a first surface of the light emitting element, and the aggregate is formed on the first surface.

20 . The method according to claim 18 , further comprising impregnating the aggregate with resin.

Assignees

• Toshiba Kk

Inventors

• Furuyama Hideto
• Endo Mitsuyoshi
• Shimojuku Miyuki
• Itonaga Shuji
• Nomura Yukihiro

Classifications

• H10H20/0362

  of encapsulations · CPC title

• H10H20/0361

  of wavelength conversion means · CPC title

• H10H20/8511 Primary

  characterised by their material, e.g. binder · CPC title

• H10H20/01335

  the light-emitting regions comprising nitride materials · CPC title

• H10H20/854

  characterised by their material, e.g. epoxy or silicone resins · CPC title