Light emitting device

Patent metadata

Field	Value
Publication number	US-2016233384-A1
Application number	US-201615134145-A
Country	US
Kind code	A1
Filing date	Apr 20, 2016
Priority date	Dec 26, 2011
Publication date	Aug 11, 2016
Grant date	—

Abstract

A light emitting device is disclosed. The light emitting device includes a light emitting structure including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer, a light-transmissive conductive layer disposed on the second conductive-type semiconductor layer and having a plurality of open regions through which the second conductive-type semiconductor layer is exposed, and a second electrode disposed on the light-transmissive conductive layer so as to extend beyond at least one of the open regions, wherein the second electrode contacts the second conductive-type semiconductor layer in the open regions and contacts the light-transmissive conductive layer in regions excluding the open regions.

First claim

What is claimed is:

1 . A light emitting device comprising:
a light emitting structure including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer; a light-transmissive conductive layer disposed on a first portion of the second conductive-type semiconductor layer; a first electrode connected to the first conductive-type semiconductor layer; and a second electrode disposed on the light-transmissive conductive layer; wherein the second electrode is in ohmic contact with the light-transmissive conductive layer and is in schottky contact with the second conductive-type semiconductor layer.

2 . The light emitting device according to claim 1 , wherein the second electrode contacts with the second conductive-type semiconductor layer in a second region.

3 . The light emitting device according to claim 2 , wherein the light-transmissive conductive layer has a plurality of open regions, and the plurality of open regions correspond to the second region of the second conductive-type semiconductor layer.

4 . The light emitting device according to claim 3 , wherein at least a portion of the first electrode is interposed between at least a portion of the open regions.

5 . The light emitting device according to claim 1 , further comprising a light-transmissive insulating layer disposed on the light-transmissive conductive layer, wherein a portion of the first electrode is formed to extend through the light-transmissive conductive layer, the second conductive-type semiconductor layer, and the active layer from the light-transmissive insulating layer so as to be electrically connected to the first conductive-type semiconductor layer.

6 . The light emitting device according to claim 5 , wherein the light-transmissive insulating layer is exposed to correspond to a second portion of the second conductive-type semiconductor layer.

7 . The light emitting device according to claim 1 , wherein the second electrode includes a second electrode pad and at least two second branch electrodes branching from the second electrode pad.

8 . The light emitting device according to claim 7 , wherein at least one region in which the light-transmissive conductive layer is connected between each of the two second branch electrodes and the second conductive-type semiconductor layer is disposed in regions corresponding to the first portion of the second conductive-type semiconductor layer.

9 . The light emitting device according to claim 8 , wherein the at least one region includes at least two regions for each of the two second branch electrodes in which the light-transmissive conductive layer is connected between the second branch electrode and the second conductive-type semiconductor layer are disposed.

10 . The light emitting device according to claim 8 , wherein an area of the second branch electrode contacting the second conductive-type semiconductor layer is wider than an area of the second branch electrode connected to the light-transmissive conductive layer.

11 . The light emitting device according to claim 1 , wherein a height of the highest point of the second electrode pad is larger than a height of a surface of the light-transmissive insulating layer.

12 . A light emitting device comprising:
a light emitting structure including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer; a light-transmissive conductive layer disposed on the second conductive-type semiconductor layer and having a plurality of open regions through which the second conductive-type semiconductor layer is exposed; a first electrode connected to the first conductive-type semiconductor layer; and a second electrode disposed on the light-transmissive conductive layer so as to extend beyond at least one of the open regions, wherein the second electrode includes a second electrode pad and at least two second branch electrodes branching from the second electrode pad, wherein the first electrode includes a first electrode pad and a first branch electrode branching from the first electrode pad and interposed between the two second branch electrodes, and wherein the first electrode further comprises at least one through electrode in electrical contact with the first conductive-type semiconductor layer, the through electrode being formed to extend through the light-transmissive conductive layer, the second conductive-type semiconductor layer, and the active layer.

13 . The light emitting device according to claim 12 , wherein the second electrode contacts the second conductive-type semiconductor layer in the open regions and contacts the light-transmissive conductive layer in regions excluding the open regions.

14 . The light emitting device according to claim 12 , wherein the second branch electrode has a larger height in a connection region with the light-transmissive conductive layer than a height of the second branch electrode in a region contacting the second conductive-type semiconductor layer.

15 . The light emitting device according to claim 14 , wherein regions in which the light-transmissive conductive layer is connected to one of the second branch electrodes correspond to regions in which the light-transmissive conductive layer is connected to another one of the second branch electrodes.

16 . The light emitting device according to claim 12 , wherein a height of the highest point of the second electrode pad is larger than a height of a surface of the light-transmissive insulating layer.

17 . A light emitting device comprising:
a light emitting structure including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer; a light-transmissive conductive layer disposed on the second conductive-type semiconductor layer and having a plurality of open regions through which the second conductive-type semiconductor layer is exposed; a first electrode connected to the first conductive-type semiconductor layer; and a second electrode disposed on the light-transmissive conductive layer so as to extend beyond at least one of the open regions, wherein the first electrode contacts with the first conductive-type semiconductor layer in first points, the second electrode directly contacts with portions of the second conductive-type semiconductor layer, and the first points horizontally overlap with the portions of the second conductive-type semiconductor layer.

18 . The light emitting device according to claim 17 , wherein the second electrode is disposed on portions of the light-transmissive conductive layer, and the first points horizontally non-overlap with the portions of the light-transmissive conductive layer.

19 . The light emitting device according to claim 17 , wherein the second electrode is in ohmic contact with the light-transmissive conductive layer and is in schottky contact with the second conductive-type semiconductor layer.

20 . The light emitting device according to claim 17 , further comprising a light-transmissive insulating layer on the light-transmissive conductive layer, wherein a portion of the first electrode is formed to extend through the light-transmissive conductive layer, the second conductive-type semiconductor layer, and the active layer from the light-transmissive insulating layer so as to be electrically connected to the first conductive-type semiconductor layer in the first points.

Assignees

• Lg Innotek Co Ltd

Inventors

• Na Min Gyu
• Choo Sung Ho
• Ju Hyun Seoung
• Hong Gi Seok
• No Ji Hee

Classifications

• H10W72/07554

  changes in dispositions · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title

• H10W72/547

  Dispositions of multiple bond wires · CPC title

• H10H20/8316

  Multi-layer electrodes comprising at least one discontinuous layer · CPC title

• H10H20/812

  within the light-emitting regions, e.g. having quantum confinement structures · CPC title