Semiconductor device including a semiconductor sheet unit interconnecting a source and a drain

Patent metadata

Field	Value
Publication number	US-2016233302-A1
Application number	US-201615132330-A
Country	US
Kind code	A1
Filing date	Apr 19, 2016
Priority date	Jun 24, 2014
Publication date	Aug 11, 2016
Grant date	—

Abstract

A semiconductor device includes a substrate, a pair of source/drain units, and a semiconductor sheet unit. The substrate includes a well region. The source/drain units are disposed above the well region. The semiconductor sheet unit is disposed substantially vertically, interconnects the source/drain units, and defines a cross-sectional shape unit in a top view. The cross-sectional shape unit includes a plurality of cross-sections that have substantially the same shape and different sizes.

First claim

What is claimed is:

1 . A semiconductor device comprising:
a substrate including a well region; a pair of source/drain units disposed above the well region; and a semiconductor sheet unit disposed substantially vertically, interconnecting the source/drain units, and defining a cross-sectional shape unit in a top view, wherein the cross-sectional shape unit includes a plurality of cross-sections that have substantially the same shape and different sizes.

2 . The semiconductor device of claim 1 , wherein each of the cross sections is a generally straight line cross section.

3 . The semiconductor device of claim 1 , wherein each of the cross sections includes a pair of straight lines that define an angle therebetween.

4 . The semiconductor device of claim 1 , wherein each of the cross sections is curved.

5 . The semiconductor device of claim 1 , wherein the substrate further includes a second well region that has a conductivity type different from a conductivity type of the well region, the semiconductor device further comprising:
a pair of second source/drain units disposed above the second well region; and a second semiconductor sheet unit disposed substantially vertically and interconnecting the second source/drain units.

6 . The semiconductor device of claim 5 , wherein the second semiconductor sheet unit defines in the top view a cross-sectional shape unit different from the cross-sectional shape unit of the semiconductor sheet unit.

7 . The semiconductor device of claim 1 , further comprising a gate stack surrounding the semiconductor sheet unit.

8 . A semiconductor device comprising:
a substrate including a well region; a pair of source/drain units disposed above the well region; and a semiconductor sheet unit disposed substantially vertically, interconnecting the source/drain units, and defining a cross-sectional shape unit in a top view, wherein the cross-sectional shape unit includes a plurality of cross-sections that have different shapes.

9 . The semiconductor device of claim 8 , wherein one of the cross sections is a generally straight line cross section.

10 . The semiconductor device of claim 8 , wherein one of the cross sections includes a pair of straight lines that define an angle therebetween.

11 . The semiconductor device of claim 8 , wherein one of the cross sections is curved.

12 . The semiconductor device of claim 8 , wherein the substrate further includes a second well region that has a conductivity type different from a conductivity type of the well region, the semiconductor device further comprising:
a pair of second source/drain units disposed above the second well region; and a second semiconductor sheet unit disposed substantially vertically and interconnecting the second source/drain units.

13 . The semiconductor device of claim 12 , wherein the second semiconductor sheet unit defines in the top view a cross-sectional shape unit different from the cross-sectional shape unit of the semiconductor sheet unit.

14 . The semiconductor device of claim 8 , further comprising a gate stack surrounding the semiconductor sheet unit.

15 . A semiconductor device comprising:
a substrate including a well region; a pair of source/drain units disposed above the well region; and a semiconductor sheet unit disposed substantially vertically, interconnecting the source/drain units, and defining in a top view a cross-sectional shape other than a straight line.

16 . The semiconductor device of claim 15 , wherein the cross-sectional shape includes a pair of straight lines that define an angle therebetween.

17 . The semiconductor device of claim 15 , wherein the cross-sectional shape is curved.

18 . The semiconductor device of claim 15 , wherein the substrate further includes a second well region that has a conductivity type different from a conductivity type of the well region, the semiconductor device further comprising:
a pair of second source/drain units disposed above the second well region; and a second semiconductor sheet unit disposed substantially vertically and interconnecting the second source/drain units.

19 . The semiconductor device of claim 18 , wherein the second semiconductor sheet unit defines in the top view a cross-sectional shape different from the cross-sectional shape of the semiconductor sheet unit.

20 . The semiconductor device of claim 15 , further comprising a gate stack surrounding the semiconductor sheet unit.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Wu Jiun-Peng
• Ohtou Tetsu
• Tsai Ching-Wei
• Wang Chih-Hao
• Liu Chi-Wen

Classifications

• H10D84/0195

  the components including vertical IGFETs · CPC title

• H10D84/0126

  the components including insulated gates, e.g. IGFETs · CPC title

• H10D84/038

  using silicon technology, e.g. SiGe · CPC title

• H10D84/017 Primary

  Manufacturing their source or drain regions, e.g. silicided source or drain regions · CPC title

• H10D64/519

  characterised by their top-view geometrical layouts · CPC title