Flexible gan light-emitting diodes

Patent metadata

Field	Value
Publication number	US-2016233269-A1
Application number	US-201514831300-A
Country	US
Kind code	A1
Filing date	Aug 20, 2015
Priority date	Aug 21, 2014
Publication date	Aug 11, 2016
Grant date	—

Abstract

Methods of fabricating flexible, free-standing LED structures are provided. An LED structure can be formed on a sapphire substrate, and the surface of the LED structure can then be coated with epoxy and attached to a rigid supporting substrate. A laser lift-off process can be performed using an ultraviolent beam from a high-power pulsed-mode laser and a shadow mask, causing at least a portion of the LED structure to separate from the sapphire substrate. The structure can then be immersed in an acetone bath to dissolve the epoxy and separate the structure from the supporting substrate.

First claim

What we claimed is:

1 . A method of fabricating a continuous-film, crystalline, semiconductor, flexible, free-standing light-emitting diode (LED), the method comprising:
forming an LED structure on a first rigid substrate; attaching the LED structure to a supporting substrate using an adhesive; using a selective laser lift-off (LLO) process to separate at least a portion of the LED structure from the first rigid substrate; and immersing the LED structure in a solvent bath to dissolve the adhesive and separate the LED structure from the rigid supporting substrate.

2 . The method according to claim 1 , wherein the first rigid substrate is a sapphire substrate.

3 . The method according to claim 1 , wherein the adhesive is an epoxy.

4 . The method according to claim 1 , wherein the supporting substrate is rigid.

5 . The method according to claim 4 , wherein the supporting substrate is glass or silicon.

6 . The method according to claim 1 , wherein the supporting substrate is flexible.

7 . The method according to claim 6 , wherein the supporting substrate is a polymeric substrate.

8 . The method according to claim 1 , wherein the LED is a GaN-based semiconductor.

9 . The method according to claim 8 , wherein forming the LED structure on the first rigid substrate comprises:
growing a GaN-based wafer by metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) on the first rigid substrate; forming the LED structure using micro-fabrication procedures, wherein the micro-fabrication procedures comprise photolithography, etching, and metal deposition; and dicing the wafer into LED chips using pulsed ultraviolet (UV) laser machining or diamond-dicing sawing.

10 . The method according to claim 1 , wherein attaching the LED structure to the supporting substrate using the adhesive comprises:
applying the adhesive to the LED structure; and curing the adhesive to a solid state.

11 . The method according to claim 1 , wherein using the selective LLO process to separate at least a portion of the LED structure from the first rigid substrate comprises: passing a high-energy, pulsed-mode laser beam at UV wavelengths through a shadow mask and through the first rigid substrate over regions of the LED structure to be lifted-off of the first rigid substrate.

12 . The method according to claim 11 , wherein the high-energy, pulsed-mode laser beam is a 266 nm YAG laser.

13 . The method according to claim 1 , wherein a plurality of LED structures is formed as an array on the first rigid substrate so that a plurality of LED strips is formed at once.

14 . The method according to claim 1 , wherein the flexible, free-standing LED structure has a first end attached to the first rigid substrate and a second end opposite to the first end freely suspended, wherein the method further comprises:
providing a second rigid substrate; attaching the freely suspended end to the second rigid substrate; and moving the first and second rigid substrates to tune the curvature of the LED structure.

15 . The method according to claim 1 , wherein the flexible, free-standing LED structure has a first end attached to the first rigid substrate and a second end opposite to the first end freely suspended, wherein the method further comprises adjusting the thickness, length, and strain of the LED structure so that it rolls itself into a tube-shaped LED.

16 . The method according to claim 1 wherein using the selective LLO process to separate at least a portion of the LED structure from the first rigid substrate comprises: selectively lifting off polygonal or circular shaped mesas; and detaching surrounding regions form the first rigid substrate to form a bowl-shaped micro-LED structure.

17 . The method according to claim 8 , wherein forming an LED structure on a first rigid substrate comprises:
creating emissive micro-pixel arrays at ends of strips that will be freely suspended after the immersing step; and creating a metal contact layer so that individual pixels can be operated independently so as to construct a micro-display panel.

18 . The method according to claim 1 , wherein the LED structure is a suspended continuous film that bends due to strain in a semiconductor film of the LED structure.

19 . The method according to claim 1 , wherein the LED structure is attached to at least one additional separate rigid substrate so that a curvature of the LED structure is tunable by adjusting spacing between the rigid substrates.

20 . The method according to claim 1 , further comprising attaching multiple flexible LED structures onto a second rigid substrate to form a flexible display, the flexible display comprising:
at least one pixel; and a two-dimensional array of discrete continuous semiconductor film LED structures.

21 . The method according to claim 20 , wherein the discrete continuous semiconductor film LED structures are individually controllable.

22 . A method of fabricating an inorganic, continuous-film, crystalline, semiconductor, flexible LED device without attachment to a substrate, the method comprising:
forming a GaN-based LED device from GaN-based LED wafers grown on sapphire substrates; depositing a thick, soft, metal layer onto the GaN-based LED device; and completely detaching the sapphire substrates by complete laser lift-off to form the flexible LEDs.

23 . The method according to claim 22 , wherein the thick, soft, metal layer is deposited by electroplating or thermal evaporation.

24 . The method according to claim 22 , wherein the entire LED device is flexible.

25 . The method according to claim 22 , wherein the LED device is a display, and wherein forming the GaN-based LED device from GaN-based LED wafers grown on sapphire substrates comprises forming a GaN-based LED display from GaN-based LED wafers grown on sapphire substrates.

26 . The method according to claim 25 , wherein the LED display comprises a two-dimensional array of LED devices serving as pixels of the display.

27 . The method according to claim 26 , wherein the pixels of the display are interconnected in a matrix-addressable fashion.

28 . A method of fabricating a photonic system, the method comprising the steps of:
fabricating an LED by the method according to claim 1 ; attaching one region of the LED to a second rigid substrate; and detaching the remaining regions of the LED from the second rigid substrate to form an optical waveguide of the photonic system.

Assignees

• Univ Hong Kong

Inventors

• Choi Hoi Wai
• Li Kwai Hei
• Cheung Yuk Fai

Classifications

• H10W90/00

  Package configurations · CPC title

• H10H20/01335 Primary

  the light-emitting regions comprising nitride materials · CPC title

• H10H20/0137

  the light-emitting regions comprising nitride materials · CPC title

• H10H20/018

  Bonding of wafers · CPC title

• H10H20/01

  Manufacture or treatment · CPC title