Method of manufacturing electronic device and electronic device

Patent metadata

Field	Value
Publication number	US-2016233170-A1
Application number	US-201514741853-A
Country	US
Kind code	A1
Filing date	Jun 17, 2015
Priority date	Feb 10, 2015
Publication date	Aug 11, 2016
Grant date	—

Abstract

A method of manufacturing an electronic device and an electronic device are disclosed. The manufacturing method including: forming a carbon nanotube electrode pattern on a substrate; placing the substrate on which the electron pattern is formed in a first oxidizing solution, to first dope the carbon nanotubes forming the electrode pattern; and spraying the electrode using a second oxidizing solution to second dope the carbon nanotubes forming the electrode pattern.

First claim

1 . A method of manufacturing an electronic device, comprising:
forming a carbon nanotube electrode pattern on a substrate; placing the substrate on which the electrode pattern is formed into a first oxidizing solution, to dope the carbon nanotubes forming the electrode pattern for a first time; and spraying the electrode using a second oxidizing solution, to dope the carbon nanotubes forming the electrode pattern for a second time.

2 . The method of manufacturing an electronic device according to claim 1 , further comprising:
washing the substrate that is sprayed.

3 . The method of manufacturing an electronic device according to claim 2 , wherein deionized water is used for washing the sprayed substrate.

4 . The method of manufacturing an electronic device according to claim 2 , further comprising:
drying the substrate that is washed.

5 . The method of manufacturing an electronic device according to claim 1 , wherein the first solution and the second solution are selected from a solution formed from at least one of the following materials: nitrogen dioxide, elemental bromine, nitric acid, thionyl chloride, perfluorosulfonic acid-PTFE copolymer and 2,3,5,6-tetrafluoro-7,7′,8,8′-tetracyano dimethyl-p-benzoquinone.

6 . The method of manufacturing an electronic device according to claim 1 , further comprising:
forming a conductive protective pattern on the electrode pattern.

7 . The method of manufacturing an electronic device according to claim 6 , wherein the conductive protective pattern is made of a conductive polymer material.

8 . The method of manufacturing an electronic device according to claim 6 , wherein the conductive protective pattern is made of a conductive polymer material doped with nano golden balls or nano silver wires.

9 . The method of manufacturing an electronic device according to claim 7 , wherein the conductive polymer material is selected from a group consisting of polyacetylene, polythiophene, polypyrrole, polyaniline, polyphenylene, polyphenylene acetylene and poly diacetylene.

10 . The method of manufacturing an electronic device according to claim 6 , wherein forming a conductive protective pattern on the electrode pattern comprises:
subjecting the conductive polymer material to a solvation treatment by using a room-temperature ionic liquid; forming the conductive protective pattern using the conductive polymer material after the solvation treatment.

11 . The method of manufacturing an electronic device according to claim 7 , wherein the room-temperature ionic liquid is selected from a group consisting of 1-ethyl-3-methylimidazolium hexafluorophosphate, 1-butyl-3-methylimidazolium hexafluorophosphate, 1-octyl-3-methylimidazolium hexafluorophosphate, 1-ethyl-3-methylimidazolium tetrafluoroborate, 1-butyl-3-methylimidazolium trifluoromethylsulfonate, 1-butyl-3-methylimidazolium chloride.

12 . The method of manufacturing an electronic device according to claim 1 , wherein the electrode pattern is an electrode of a solar cell.

13 . The method of manufacturing an electronic device according to claim 1 , wherein the electronic device is a display panel provided with a solar cell, and the electrode pattern is an electrode of the solar cell.

14 . The method of manufacturing an electronic device according to claim 1 , wherein a concentration of the first solution is greater than or equal to 5 wt %, and a concentration of the second solution is greater than or equal to 5 wt %.

15 . The method of manufacturing an electronic device according to claim 1 , wherein the substrate on which the electron pattern is formed is placed into the first oxidizing solution for a time period of 5 to 30 minutes, to dope the carbon nanotubes forming the electrode pattern for the first time, and then, the electrode is spayed by the second oxidizing solution for a time period of 2 to 10 minutes, to dope the carbon nanotubes forming the electrode pattern for the second time.

16 . An electronic device manufactured by the method according to claim 1 .

17 . The electronic device according to claim 16 , wherein the electronic device is an electrode.

18 . The electronic device according to claim 16 , wherein the electronic device is a transparent electrode, a pixel electrode, an electrode of a thin film transistor or an electrode of a solar cell.

19 . The electronic device according to claim 1 , wherein the first solution and the second solution are selected from a group consisting of a nitric acid solution with a concentration of 20 wt % to 35 wt %, a thionyl chloride solution with a concentration of 25 wt % to 35 wt %, and a perfluorosulfonic acid-PTFE copolymer solution with a concentration of 30 wt % to 35 wt %.

Assignees

• Boe Technology Group Co Ltd
• Beijing Boe Optoelectronics Tech Co Ltd

Inventors

• Yang Jiuxia
• Bai Feng
• Liu Jiantao

Classifications

• H10D86/441

  Interconnections, e.g. scanning lines · CPC title

• H10F77/244 Primary

  made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers · CPC title

• H10F71/138

  Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes · CPC title

• H10D86/60 Primary

  wherein the TFTs are in active matrices · CPC title

• H01L31/022466

  Electricity · mapped topic