Composite Substrate with Alternating Pattern of Diamond and Metal or Metal Alloy

Patent metadata

Field	Value
Publication number	US-2016233142-A1
Application number	US-201615011805-A
Country	US
Kind code	A1
Filing date	Feb 1, 2016
Priority date	Feb 5, 2015
Publication date	Aug 11, 2016
Grant date	—

Abstract

A composite substrate includes a submount substrate of an alternating pattern of electrically insulative portions, pieces, layers or segments and electrically conductive portions, pieces, layers or segments, and a shaft, back or plate for supporting the alternating pattern of electrically insulative portions and electrically conductive portions. An active device having a P—N junction can be mounted on the submount substrate. The electrically insulative portions, pieces, layers or segments can be formed from diamond while the electrically conductive portions, pieces, layers or segments can be formed from a metal or metal alloy.

First claim

The invention claimed is:

1 . A composite substrate comprising:
a set of spaced electrical conductors; means for supporting the spaced electrical conductors; and a set of electrical insulators, wherein between each pair of spaced electrical conductors is positioned one of the electrical insulators in contact with said pair of electrical conductors.

2 . The composite substrate of claim 1 , further including at least one active device positioned over one or both of the following:
a portion of one of the electrical insulators that is not in contact with one of the spaced electrical conductors; and a portion of one of the electrical conductors that is not in contact with at least one of the electrical insulators.

3 . The composite substrate of claim 2 , wherein the means for supporting the spaced electrical conductors is positioned between the active device and said one electrical insulator.

4 . The composite substrate of claim 2 , wherein the active device is a semiconductor device having at least one P—N junction.

5 . The composite substrate of claim 2 , wherein a ratio between a Coefficient of Thermal Expansion (CTE) of the composite substrate and a CTE of the active device is between 0.4 and 2, or between 0.5 and 1.8, or between 0.6 and 1.6, or between 0.7 and 1.4, or between 0.8 and 1.2.

6 . The composite substrate of claim 1 , wherein each electrical insulator is comprised of diamond.

7 . The composite substrate of claim 1 , wherein each electrical conductor is comprised of a metal or a metal alloy.

8 . The composite substrate of claim 8 , wherein each electrical conductor is comprised of a copper-tungsten (Cu—W) alloy.

9 . The composite substrate of claim 1 , wherein the means for supporting the spaced electrical conductors includes one of the following:
a shaft or back to which one end of each electrical conductors is coupled; or a plate to which one side of each electrical conductors is coupled.

10 . The composite substrate of claim 9 , wherein the spaced electrical conductors and the means for supporting the spaced electrical conductors are a unitary piece formed of the same material.

11 . The composite substrate of claim 1 , wherein each electrical insulator can be: directly grown on said pair the electrical conductors in contact with said electrical insulator; or can be bonded to said pair the electrical conductors in contact with said electrical insulator; or can be in direct contact said pair the electrical conductors.

12 . The composite substrate of claim 11 , wherein each electrical insulator directly grown on said pair the electrical conductors in contact with said electrical insulator is grown via chemical vapor deposition (CVD).

13 . The composite substrate of claim 11 , wherein each electrical insulator bonded to said pair the electrical conductors in contact with said electrical insulation is bonded via an adhesive.

14 . The composite substrate of claim 2 , further including a dielectric material between the active device and one or both of said portion of the one electrical insulator and said portion of the one electrical conductor.

15 . The composite substrate of claim 14 , further including on said dielectric at least one conductor configured to convey electrical signals to and/or from contacts of the active device.

16 . A composite substrate comprising an alternating pattern of diamond portions, pieces, layers or segments and metal or metallic portions, pieces, layers or segments, wherein each metallic portion, piece or segment has a coefficient of thermal expansion (CTE) <12×10 −6 meter/meter-degree Kelvin, <11×10 −6 meter/meter-degree Kelvin, <10×10 −6 meter/meter-degree Kelvin, or <9×10 −6 meter/meter-degree Kelvin.

17 . The composite substrate of claim 16 , further comprising means for supporting the alternating pattern of diamond portions, pieces, layers or segments and metal or metallic portions, pieces, layers or segments including one of the following:
a shaft or back to which one end of each metallic portion is coupled; or a plate to which one side of each metallic portion is coupled.

18 . The composite substrate of claim 16 , further including an active device positioned over one or both of the following:
a portion of one of the diamond portions, pieces, layers or segments; and a portion of one of the metal or metallic portions, pieces, layers or segments, wherein the active device includes a P—N junction.

19 . The composite substrate of claim 18 , wherein a ratio between a Coefficient of Thermal Expansion (CTE) of the composite substrate and a CTE of the active device is between 0.4 and 2; or between 0.5 and 1.8; or between 0.6 and 1.6; or between 0.7 and 1.4; or between 0.8 and 1.2.

20 . The composite substrate of claim 18 , wherein the alternating pattern of diamond portions, pieces, layers or segments and metal or metallic portions, pieces, layers or segments define a submount and the composite substrate further includes:
a dielectric layer between the active device and at least a portion of the submount; and a conductor formed on the dielectric layer, said conductor in electrical continuity with a contact of the active device.

Assignees

• Ii Vi Inc

Inventors

• Xu Wen-Qing
• Liu Chao
• Barbarossa Giovanni
• Eissler Elgin E
• Anderson Thomas E
• Kraisinger Charles J
• Lichtenstein Norbert

Classifications

• H10W90/763

  between laterally-adjacent chips · CPC title

• H10W90/761

  of strap connectors · CPC title

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/00

  Package configurations · CPC title