Semiconductor manufacturing apparatus and semiconductor manufacturing method

Patent metadata

Field	Value
Publication number	US-2016233135-A1
Application number	US-201514793047-A
Country	US
Kind code	A1
Filing date	Jul 7, 2015
Priority date	Feb 6, 2015
Publication date	Aug 11, 2016
Grant date	—

Abstract

In one embodiment, a semiconductor manufacturing apparatus includes an extraction module configured to extract, in cycle etching that repeats first processes of etching a workpiece layer and second processes of performing different processing from the first processes for plural cycles, light emission intensities in the first processes for individual cycles. The apparatus further includes a detection module configured to detect an etching end point of the workpiece layer in the cycle etching, based on the light emission intensities of the plural cycles.

First claim

1 . A semiconductor manufacturing apparatus comprising:
an extraction module configured to extract, in cycle etching that repeats first processes of etching a workpiece layer and second processes of performing different processing from the first processes for plural cycles, light emission intensities in the first processes for individual cycles; and a detection module configured to detect an etching end point of the workpiece layer in the cycle etching, based on the light emission intensities of the plural cycles.

2 . The apparatus of claim 1 , wherein the detection module detects the etching end point, based on peak values of the light emission intensities for the individual cycles.

3 . The apparatus of claim 1 , wherein the detection module detects the etching end point, based on average values of the light emission intensities for the individual cycles.

4 . The apparatus of claim 1 , wherein the detection module detects the etching end point, based on decrease amounts of the light emission intensities for the individual cycles relative to a light emission intensity for a predetermined cycle.

5 . The apparatus of claim 1 , wherein the detection module detects the etching end point, based on decrease ratios of the light emission intensities for the individual cycles relative to a light emission intensity for a predetermined cycle.

6 . The apparatus of claim 1 , wherein a second process includes a process of forming a film on the workpiece layer.

7 . The apparatus of claim 6 , wherein a first process includes a process of etching the workpiece layer by using the film as a mask.

8 . The apparatus of claim 6 , wherein the second process further includes a breakthrough process of the film.

9 . The apparatus of claim 1 , wherein a first process of a Kth cycle lowers a bottom face of a concave portion that is formed in the workpiece layer in first processes of first to (K−1)th cycles, where K is an integer of two or more.

10 . The apparatus of claim 1 , further comprising a displaying module configured to display values obtained from the light emission intensities on a screen.

11 . A semiconductor manufacturing method comprising:
extracting, in cycle etching that repeats first processes of etching a workpiece layer and second processes of performing different processing from the first processes for plural cycles, light emission intensities in the first processes for individual cycles; and detecting an etching end point of the workpiece layer in the cycle etching, based on the light emission intensities of the plural cycles.

12 . The method of claim 11 , wherein the etching end point is detected based on peak values of the light emission intensities for the individual cycles.

13 . The method of claim 11 , wherein the etching end point is detected based on average values of the light emission intensities for the individual cycles.

14 . The method of claim 11 , wherein the etching end point is detected based on decrease amounts of the light emission intensities for the individual cycles relative to a light emission intensity for a predetermined cycle.

15 . The method of claim 11 , wherein the etching end point is detected based on decrease ratios of the light emission intensities for the individual cycles relative to a light emission intensity for a predetermined cycle.

16 . The method of claim 11 , wherein a second process includes a process of forming a film on the workpiece layer.

17 . The method of claim 16 , wherein a first process includes a process of etching the workpiece layer by using the film as a mask.

18 . The method of claim 16 , wherein the second process further includes a breakthrough process of the film.

19 . The method of claim 11 , wherein a first process of a Kth cycle lowers a bottom face of a concave portion that is formed in the workpiece layer in first processes of first to (K−1)th cycles, where K is an integer of two or more.

20 . The method of claim 11 , further comprising displaying values obtained from the light emission intensities on a screen.

Assignees

• Toshiba Kk

Inventors

• Ishikawa Masao

Classifications

• H10P50/244

  comprising alternated and repeated etching and passivation steps · CPC title

• H10P50/691

  for Group V materials or Group III-V materials · CPC title

• H10P50/642

  Chemical etching · CPC title

• H10P50/287

  by chemical means · CPC title

• H10P74/238 Primary

  comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement · CPC title