Blue enhanced image sensor
US-2016211295-A1 · Jul 21, 2016 · US
US2016227147A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016227147-A1 |
| Application number | US-201514612961-A |
| Country | US |
| Kind code | A1 |
| Filing date | Feb 3, 2015 |
| Priority date | Feb 3, 2015 |
| Publication date | Aug 4, 2016 |
| Grant date | — |
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A back side illuminated image sensor includes a pixel array including semiconductor material, and image sensor circuitry disposed on a front side of the semiconductor material to control operation of the pixel array. A first pixel includes a first doped region disposed proximate to a back side of the semiconductor material and extends into the semiconductor material a first depth to reach the image sensor circuitry. A second pixel with a second doped region is disposed proximate to the back side of the semiconductor material and extends into the semiconductor material a second depth which is less than the first depth. A third doped region is disposed between the second doped region and the image sensor circuitry front side of the semiconductor material. The third doped region is electrically isolated from the first doped region and the second doped region.
Opening claim text (preview).
What is claimed is: 1 . A back side illuminated image sensor, comprising: a pixel array including a semiconductor material having a front side and a back side; image sensor circuitry disposed on the front side of the semiconductor material to control operation of the pixel array and to readout image charge from the pixel array; a first pixel in the pixel array including a first doped region, wherein the first doped region is disposed in the semiconductor material proximate t…
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