Image sensor with enhanced quantum efficiency

US2016227147A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2016227147-A1
Application numberUS-201514612961-A
CountryUS
Kind codeA1
Filing dateFeb 3, 2015
Priority dateFeb 3, 2015
Publication dateAug 4, 2016
Grant date

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  2. Abstract

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  5. First independent claim

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Abstract

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A back side illuminated image sensor includes a pixel array including semiconductor material, and image sensor circuitry disposed on a front side of the semiconductor material to control operation of the pixel array. A first pixel includes a first doped region disposed proximate to a back side of the semiconductor material and extends into the semiconductor material a first depth to reach the image sensor circuitry. A second pixel with a second doped region is disposed proximate to the back side of the semiconductor material and extends into the semiconductor material a second depth which is less than the first depth. A third doped region is disposed between the second doped region and the image sensor circuitry front side of the semiconductor material. The third doped region is electrically isolated from the first doped region and the second doped region.

First claim

Opening claim text (preview).

What is claimed is: 1 . A back side illuminated image sensor, comprising: a pixel array including a semiconductor material having a front side and a back side; image sensor circuitry disposed on the front side of the semiconductor material to control operation of the pixel array and to readout image charge from the pixel array; a first pixel in the pixel array including a first doped region, wherein the first doped region is disposed in the semiconductor material proximate t…

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What does patent US2016227147A1 cover?
A back side illuminated image sensor includes a pixel array including semiconductor material, and image sensor circuitry disposed on a front side of the semiconductor material to control operation of the pixel array. A first pixel includes a first doped region disposed proximate to a back side of the semiconductor material and extends into the semiconductor material a first depth to reach the i…
Who is the assignee on this patent?
Omnivision Tech Inc
What technology area does this patent fall under?
Primary CPC classification H10F39/8063. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Aug 04 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).