Polishing agent, polishing method, and liquid additive for polishing

US2016222253A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2016222253-A1
Application numberUS-201615014296-A
CountryUS
Kind codeA1
Filing dateFeb 3, 2016
Priority dateFeb 4, 2015
Publication dateAug 4, 2016
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The present invention relates to a polishing agent including: cerium oxide particles; a water-soluble organic polymer having at least one selected from a carboxylic acid group and a salt of carboxylic acid; a water-soluble polyamide having at least one selected from a tertiary amino group and an oxyalkylene chain in a molecule thereof; and water, in which the polishing agent has a pH of 7 or less.

First claim

Opening claim text (preview).

What is claimed is: 1 . A polishing agent comprising: cerium oxide particles; a water-soluble organic polymer having at least one selected from a carboxylic acid group and a salt of carboxylic acid; a water-soluble polyamide having at least one selected from a tertiary amino group and an oxyalkylene chain in a molecule thereof; and water, wherein the polishing agent has a pH of 7 or less. 2 . The polishing agent according to claim 1 , wherein the water-soluble polyamide has the tertiary amino group in at least one selected from a main chain and a side chain thereof. 3 . The polishing agent according to claim 1 , wherein the water-soluble polyamide has the oxyalkylene chain in the main chain thereof. 4 . The polishing agent according to claim 1 , wherein the water-soluble polyamide is a copolymer obtained from at least one selected from aminoethyl piperazine and a modified polyalkylene glycol, and a lactam. 5 . The polishing agent according to claim 1 , wherein the water-soluble organic polymer contains at least one selected from polyacrylic acid and ammonium polyacrylate. 6 . The polishing agent according to claim 1 , wherein the water-soluble organic polymer has a weight average molecular weight of from 1,000 to 50,000. 7 . The polishing agent according to claim 1 , wherein the water-soluble polyamide is contained in an amount of from 0.00005 to 0.01 mass % based on a total amount of the polishing agent. 8 . The polishing agent according to claim 1 , wherein the water-soluble organic polymer is contained in an amount of from 0.01 to 0.5 mass % based on the total amount of the polishing agent. 9 . The polishing agent according to claim 1 , having the pH of from 4 to 6.5. 10 . The polishing agent according to claim 1 , wherein the cerium oxide particles have an average secondary particle size of from 0.01 to 0.5 μm. 11 . The polishing agent according to claim 1 , wherein the cerium oxide particles are contained in an amount of from 0.05 to 2 mass % based on the total amount of the polishing agent. 12 . A polishing method comprising: bringing a polishing pad into contact with a surface to be polished while supplying a polishing agent to perform polishing by relative movement therebetween, wherein the surface to be polished including a surface comprising silicon oxide of a semiconductor substrate is polished using the polishing agent according to claim 1 as the polishing agent. 13 . A liquid additive for polishing, which is a liquid additive for preparing a polishing agent by mixing with a dispersion of cerium oxide particles, the liquid additive comprising: a water-soluble organic polymer having at least one selected from a carboxylic acid group and a salt of carboxylic acid; a water-soluble polyamide having at least one selected from a tertiary amino group and an oxyalkylene chain in a molecule thereof; and water, wherein the liquid additive has a pH of 7 or less. 14 . The liquid additive for polishing according to claim 13 , wherein the water-soluble polyamide has at least one selected from: the tertiary amino group bonded to at least one selected from a main chain and a side chain thereof; and the oxyalkylene chain bonded to the main chain thereof. 15 . The liquid additive for polishing according to claim 13 , wherein the water-soluble polyamide is a copolymer obtained from at least one selected from aminoethyl piperazine and a modified polyalkylene glycol, and a lactam. 16 . The liquid additive for polishing according to claim 13 , wherein the water-soluble organic polymer contains at least one selected from polyacrylic acid and ammonium polyacrylate.

Assignees

Inventors

Classifications

  • of semiconductor materials · CPC title

  • H10P95/062Primary

    involving a dielectric removal step · CPC title

  • C09G1/02Primary

    containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

  • Electricity · mapped topic

  • Aqueous liquid suspensions · CPC title

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Frequently asked questions

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What does patent US2016222253A1 cover?
The present invention relates to a polishing agent including: cerium oxide particles; a water-soluble organic polymer having at least one selected from a carboxylic acid group and a salt of carboxylic acid; a water-soluble polyamide having at least one selected from a tertiary amino group and an oxyalkylene chain in a molecule thereof; and water, in which the polishing agent has a pH of 7 or less.
Who is the assignee on this patent?
Asahi Glass Co Ltd
What technology area does this patent fall under?
Primary CPC classification H10P95/062. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Aug 04 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).