Polishing composition and method for producing semiconductor substrate
US-2015014579-A1 · Jan 15, 2015 · US
US2016222253A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016222253-A1 |
| Application number | US-201615014296-A |
| Country | US |
| Kind code | A1 |
| Filing date | Feb 3, 2016 |
| Priority date | Feb 4, 2015 |
| Publication date | Aug 4, 2016 |
| Grant date | — |
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The present invention relates to a polishing agent including: cerium oxide particles; a water-soluble organic polymer having at least one selected from a carboxylic acid group and a salt of carboxylic acid; a water-soluble polyamide having at least one selected from a tertiary amino group and an oxyalkylene chain in a molecule thereof; and water, in which the polishing agent has a pH of 7 or less.
Opening claim text (preview).
What is claimed is: 1 . A polishing agent comprising: cerium oxide particles; a water-soluble organic polymer having at least one selected from a carboxylic acid group and a salt of carboxylic acid; a water-soluble polyamide having at least one selected from a tertiary amino group and an oxyalkylene chain in a molecule thereof; and water, wherein the polishing agent has a pH of 7 or less. 2 . The polishing agent according to claim 1 , wherein the water-soluble polyamide has the tertiary amino group in at least one selected from a main chain and a side chain thereof. 3 . The polishing agent according to claim 1 , wherein the water-soluble polyamide has the oxyalkylene chain in the main chain thereof. 4 . The polishing agent according to claim 1 , wherein the water-soluble polyamide is a copolymer obtained from at least one selected from aminoethyl piperazine and a modified polyalkylene glycol, and a lactam. 5 . The polishing agent according to claim 1 , wherein the water-soluble organic polymer contains at least one selected from polyacrylic acid and ammonium polyacrylate. 6 . The polishing agent according to claim 1 , wherein the water-soluble organic polymer has a weight average molecular weight of from 1,000 to 50,000. 7 . The polishing agent according to claim 1 , wherein the water-soluble polyamide is contained in an amount of from 0.00005 to 0.01 mass % based on a total amount of the polishing agent. 8 . The polishing agent according to claim 1 , wherein the water-soluble organic polymer is contained in an amount of from 0.01 to 0.5 mass % based on the total amount of the polishing agent. 9 . The polishing agent according to claim 1 , having the pH of from 4 to 6.5. 10 . The polishing agent according to claim 1 , wherein the cerium oxide particles have an average secondary particle size of from 0.01 to 0.5 μm. 11 . The polishing agent according to claim 1 , wherein the cerium oxide particles are contained in an amount of from 0.05 to 2 mass % based on the total amount of the polishing agent. 12 . A polishing method comprising: bringing a polishing pad into contact with a surface to be polished while supplying a polishing agent to perform polishing by relative movement therebetween, wherein the surface to be polished including a surface comprising silicon oxide of a semiconductor substrate is polished using the polishing agent according to claim 1 as the polishing agent. 13 . A liquid additive for polishing, which is a liquid additive for preparing a polishing agent by mixing with a dispersion of cerium oxide particles, the liquid additive comprising: a water-soluble organic polymer having at least one selected from a carboxylic acid group and a salt of carboxylic acid; a water-soluble polyamide having at least one selected from a tertiary amino group and an oxyalkylene chain in a molecule thereof; and water, wherein the liquid additive has a pH of 7 or less. 14 . The liquid additive for polishing according to claim 13 , wherein the water-soluble polyamide has at least one selected from: the tertiary amino group bonded to at least one selected from a main chain and a side chain thereof; and the oxyalkylene chain bonded to the main chain thereof. 15 . The liquid additive for polishing according to claim 13 , wherein the water-soluble polyamide is a copolymer obtained from at least one selected from aminoethyl piperazine and a modified polyalkylene glycol, and a lactam. 16 . The liquid additive for polishing according to claim 13 , wherein the water-soluble organic polymer contains at least one selected from polyacrylic acid and ammonium polyacrylate.
of semiconductor materials · CPC title
involving a dielectric removal step · CPC title
containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title
Electricity · mapped topic
Aqueous liquid suspensions · CPC title
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