Method for producing patterned metal nanowires, electrode using the patterned metal nanowires, and transistor using the patterned metal nanowire electrode

Patent metadata

Field	Value
Publication number	US-2016218009-A1
Application number	US-201514695720-A
Country	US
Kind code	A1
Filing date	Apr 24, 2015
Priority date	Jan 26, 2015
Publication date	Jul 28, 2016
Grant date	—

Abstract

The present invention relates to a method of producing patterned silver nanowire, comprising: coating a photosensitive polyamide acid polymer solution on a silica substrate and dried; using a photomask to paste on the photosensitive polyamic acid and illuminates by ultraviolet; using a developer to obtain a patterned polyamide acid template; coating a metal nanowire suspension on the patterned template; and removing the metal nanowire outside of the patterned polyamic acid. The present invention also discloses an electrode using the patterned metal nanowire and a transistor using the patterned metal nanowire electrode.

First claim

1 . A method for producing patterned metal nanowires, comprising the steps of:
(a) applying a solution of a photosensitive polyamic acid polymer to a silicon substrate, and drying the solution by baking; (b) attaching a photomask to the photosensitive polyamic acid polymer, and irradiating the photosensitive polyamic acid polymer with energy rays; (c) developing the photosensitive polyamic acid polymer with a developer solution to obtain a patterned template having a patterned polyamic acid; (d) coating the patterned template with a metal nanowire suspension; and (e) removing metal nanowires outside the patterned polyamic acid.

2 . The method of claim 1 , wherein the solution of the photosensitive polyamic acid polymer is applied at a thickness of 450-2000 nm.

3 . The method of claim 1 , wherein the silicon substrate is a silicon dioxide wafer.

4 . The method of claim 1 , wherein the solution of the photosensitive polyamic acid polymer is obtained by first preparing a polyamic acid polymer solution from 1,4-cyclohexyldiamine (CHDA) monomers and 3,3′,4,4′-biphenyltetracarboxylic acid dianhydride (BPDA) and then adding a cinnamic-type photobase generator (PBG) into the polyamic acid polymer solution.

5 . The method of claim 1 , wherein the solution of the photosensitive polyamic acid polymer has a viscosity of 0.3-0.4 dL/g.

6 . The method of claim 1 , wherein in the step (d), the patterned template is coated with the metal nanowire suspension by spray coating.

7 . The method of claim 1 , wherein the metal nanowire suspension is prepared from an ethanol solution and contains said metal nanowires at a concentration of 1 mg/ml.

8 . The method of claim 1 , wherein in the step (e), the metal nanowires outside the patterned polyamic acid are removed by peeling with an adhesive tape.

9 . An electrode using the patterned metal nanowires produced by the method of claim 1 , comprising:
the silicon substrate; the patterned template formed on the silicon substrate and having the patterned polyamic acid; and said metal nanowires attached to the patterned polyamic acid.

10 . A transistor using the electrode of claim 9 .

Assignees

• Univ Nat Taiwan

Inventors

• Chang Hsuan-Chun
• Chung Cheng-Yu
• Chen Wen-Chang

Classifications

• H10P14/412

  Deposition of metallic or metal-silicide materials · CPC title

• H10P14/46 Primary

  using a liquid · CPC title

• H10D64/251

  Source or drain electrodes for field-effect devices · CPC title

• H10D64/62

  Electrodes ohmically coupled to a semiconductor · CPC title

• H10D62/83

  being Group IV materials, e.g. B-doped Si or undoped Ge · CPC title