Thermal barrier coating with improved adhesion

Patent metadata

Field	Value
Publication number	US-2016215382-A1
Application number	US-201415026493-A
Country	US
Kind code	A1
Filing date	Sep 25, 2014
Priority date	Oct 9, 2013
Publication date	Jul 28, 2016
Grant date	—

Abstract

A metal article includes a metallic substrate and a thermal barrier coating. A thermally grown mixed oxide layer between the metal substrate and the thermally grown mixed oxide layer enhances the spallation resistance of the thermal barrier coating on the metallic substrate of metal article. In an embodiment, the thermal barrier coating is about 51 weight percent gadolinia and about 49 weight percent yttria partially stabilized zirconia.

First claim

1 . A metal article comprising:
a metal substrate; a thermal barrier coating (TBC); and a thermally grown mixed oxide (TGMO) layer between the metallic substrate and the TBC.

2 . The article of claim 1 wherein the TBC is gadolinia zirconia (GdZr).

3 . The article of claim 2 wherein the TBC is about 59 weight percent gadolinia and the remainder substantially zirconia.

4 . The article of claim 1 wherein the thermal barrier coating is applied by thermal spraying, sputtering, or electron beam physical vapor deposition (EBPVD).

5 . The article of claim 1 wherein the thermal barrier coating is deposited by (EBPVD).

6 . The article of claim 1 wherein the substrate is a nickel-based, cobalt based, or iron based superalloy or mixtures thereof or a titanium alloy.

7 . The article of claim 1 wherein the thermally grown mixed oxide layer is formed during the preheat process while the substrate is heated to the thermal barrier coating deposition temperature.

8 . The article of claim 7 wherein the preheat process comprises a heat up time of about 15 minutes to about 18 minutes to a thermal barrier coating deposition temperature of between about 1875° F. and about 1925° F.

9 . The article of claim 1 wherein the thermal barrier coating thickness is between about 1 mils and about 15 mils.

10 . The article of claim 1 wherein the thermally grown mixed oxide layer has a thickness of between about 0.1 micron and about 1.0 micron.

11 . A method of forming a spallation resistant thermal barrier coating on a metal substrate comprising:
cleaning the substrate; preheating the substrate to a temperature suitable for the deposition of a thermal barrier coating according to a preheating schedule that allows a thermally grown mixed oxide layer to form on the substrate; depositing the thermal barrier coat on the thermally grown mixed oxide layer.

12 . The method of claim 11 wherein the metal substrate comprises a nickel base, cobalt base, iron base superalloy or mixtures thereof or a titanium alloy.

13 . The method of claim 11 wherein the thermal barrier coating is gadolinia zirconia.

14 . The method of claim 13 wherein the gadolinia zirconia TBC comprises about 59 weight percent gadolinia and the remainder substantially zirconia.

15 . The method of claim 11 wherein the thermal barrier coating is deposited by thermal spray, sputtering or electron beam physical vapor deposition.

16 . The method of claim 15 wherein the thermal barrier coating is deposited by EBPVD.

17 . The method of claim 11 wherein the thermal barrier coat deposition temperature is between about 1875° F. and about 1925° F.

18 . The method of claim 11 wherein the preheating schedule comprises a heating time of about 15 minutes to 18 minutes to the thermal barrier coating deposition temperature.

19 . The method of claim 10 wherein the thermal barrier coating thickness is from about 1 mils and about 15 mils.

20 . The method of claim 10 wherein the thermally grown mixed oxide layer thickness is from about 0.1 micron and about 1.0 micron.

Assignees

• United Technologies Corp

Inventors

• Ridgeway Neil B

Classifications

• C23C14/34

  Sputtering · CPC title

• C23C28/345

  with at least one oxide layer · CPC title

• C23C4/08

  containing only metal elements (C23C4/073 takes precedence) · CPC title

• C23C14/16

  on metallic substrates or on substrates of boron or silicon · CPC title

• C23C14/24

  Vacuum evaporation · CPC title