Light-emitting device, electronic equipment, and process of producing light-emitting device

Patent metadata

Field	Value
Publication number	US-2016211479-A1
Application number	US-201615085313-A
Country	US
Kind code	A1
Filing date	Mar 30, 2016
Priority date	Aug 28, 2008
Publication date	Jul 21, 2016
Grant date	—

Abstract

A light-emitting device includes a light-reflecting layer, a first electrode disposed on or above the light-reflecting layer, a semi-transparent reflective second electrode, a light-emitting function layer disposed between the first electrode and the second electrode, and an electron-injection layer disposed between the light-emitting function layer and the second electrode. The second electrode is made of an Ag alloy having an Ag content of from 50% by atoms to 98% by atoms.

First claim

What is claimed is:

1 . A light-emitting device comprising:
a light-reflecting layer; a transparent first electrode disposed on or above the light-reflecting layer; a semi-transparent reflective second electrode; a light-emitting function layer disposed between the first electrode and the second electrode; an electron-injection layer disposed between the light-emitting function layer and the second electrode; a first layer disposed on the second electrode for absorbing stress to the second electrode; and a passivation layer made of an inorganic material disposed on the first layer, wherein the second electrode is made of an alloy in which any of Mg, Cu, Zn, Pd, Nd, and Al is mixed with Ag at an atomic number ratio in the range of 1:3 to 1:50.

2 . The light-emitting device according to claim 1 , wherein
the second electrode has a thickness in a range of 10 to 30 nm.

3 . The light-emitting device according to claim 2 , wherein
the first layer is made of a material having a work function of 4.2 eV or more and being other than Ag.

4 . The light-emitting device according to claim 3 , wherein
the first layer is made of Zn, Al, Au, SnO 2 , ZnO 2 , or SiO.

5 . The light-emitting device according to claim 2 , wherein
the light-emitting function layer includes an electron-injection layer; and the first layer is made of the same material as that of the electron-injection layer.

6 . The light-emitting device according to claim 5 , wherein
the first layer is made of LiF, Li 2 O, Liq, MgO, MgF 2 , CaF 2 , SrF 2 , NaF, or WF.

7 . The light-emitting device according to claim 1 , wherein
the first layer is made of an electron-injecting material.

8 . The light-emitting device according to claim 1 , wherein
the passivation layer is made of SiN or SiON.

9 . Electronic equipment including the light-emitting device according to claim 1 .

10 . Electronic equipment including the light-emitting device according to claim 2 .

11 . Electronic equipment including the light-emitting device according to claim 3 .

12 . Electronic equipment including the light-emitting device according to claim 4 .

13 . Electronic equipment including the light-emitting device according to claim 5 .

14 . Electronic equipment including the light-emitting device according to claim 6 .

15 . Electronic equipment including the light-emitting device according to claim 7 .

16 . Electronic equipment including the light-emitting device according to claim 8 .

Assignees

• Seiko Epson Corp

Inventors

• Kobayashi Hidekazu
• Shiratori Koya
• Yoshioka Atsushi

Classifications

• H10K59/876

  comprising a resonant cavity structure, e.g. Bragg reflector pair · CPC title

• H10K59/873

  Encapsulations · CPC title

• H10K59/8722

  Peripheral sealing arrangements, e.g. adhesives, sealants · CPC title

• H10K59/80524

  Transparent cathodes, e.g. comprising thin metal layers · CPC title

• H10K59/80522

  combined with auxiliary electrodes · CPC title