Terahertz receiver and terahertz imaging sensor apparatus for high data rate

Patent metadata

Field	Value
Publication number	US-2016209268-A1
Application number	US-201514614726-A
Country	US
Kind code	A1
Filing date	Feb 5, 2015
Priority date	Jan 20, 2015
Publication date	Jul 21, 2016
Grant date	—

Abstract

Provided is a terahertz receiver for high data rate including: a detector including a field effect transistor (FET) configured to convert a terahertz wave signal received by a receiving antenna to an electric current; and a measuring device configured to read out an electric current output from the detector.

First claim

What is claimed is:

1 . A terahertz receiver for high data rate comprising:
a detector including a field effect transistor (FET) configured to convert a terahertz wave signal received by a receiving antenna to an electric current; and a measuring device configured to read out an electric current output from the detector.

2 . The terahertz receiver for high data rate of claim 1 , wherein the measuring device includes a trans-impedance amplifier configured to covert the electric current output from the detector to a voltage and to amplify the electric current.

3 . The terahertz receiver for high data rate of claim 1 , wherein the measuring device includes:
a load resistance connected between the detector and a ground; and an input capacitor connected between the detector and the ground, and reads out an electric current flowing in the load resistance.

4 . The terahertz receiver for high data rate of claim 3 , wherein the measuring device reads out the electric current using the following equation:
I= 1/( R ch +R LI ∥C LI )*Δ V *(1/ω C LI /(1/ω C LI +R LI ))
wherein I: electric current flowing in the load resistance ΔV: DC output voltage of the transistor generated by a terahertz wave R ch : channel resistance between a source and a drain of the transistor R LI : load resistance of the measuring device C LI : input capacitor of the measuring device.

5 . A terahertz imaging sensor apparatus for high data rate comprising:
a detector including a field effect transistor (FET) configured to convert a terahertz wave signal received by a receiving antenna to an electric current; a measuring device configured to read out an electric current output from the detector; and a digital signal generating unit configured to generate a digital signal on the basis of an electric current value measured by the measuring device.

6 . The terahertz imaging sensor apparatus for high data rate of claim 5 , wherein the measuring device includes a trans-impedance amplifier configured to convert the electric current output from the detector to a voltage and to amplify the electric current.

7 . The terahertz imaging sensor apparatus for high data rate of claim 6 , wherein the digital signal generating unit includes a voltage-controlled oscillator configured to output an oscillation frequency according to an output voltage of the measuring device.

8 . The terahertz imaging sensor apparatus for high data rate of claim 7 , wherein the digital signal generating unit includes a frequency digital converter configured to convert the oscillation frequency output from the voltage-controlled oscillator to a digital signal.

9 . The terahertz imaging sensor apparatus for high data rate of claim 8 , further comprising:
a digital signal processor configured to generate data on the basis of the converted digital signal.

10 . The terahertz imaging sensor apparatus for high data rate of claim 7 , further comprising:
a regulator configured to be able to regulate a gain of the voltage-control oscillator by regulating the output voltage applied to the voltage-control oscillator.

11 . The terahertz imaging sensor apparatus for high data rate of claim 10 , wherein the regulator is configured to regulate the output voltage of the measuring device to raise the gain of the voltage-control oscillator when it is necessary to increase output sensitivity, and to regulate the output voltage to lower the gain of the voltage-control oscillator when it is necessary to reduce noise sensitivity.

12 . The terahertz imaging sensor apparatus for high data rate of claim 10 , wherein the gain of the voltage-control oscillator is a value of (frequency control range)/(voltage control range).

13 . The terahertz imaging sensor apparatus for high data rate of claim 8 , further comprising:
a clock generating unit configured to input, to the detector, a first control signal which allows a DC output voltage by the received terahertz wave to be generated and a second control signal which does not allow the DC output voltage by the received terahertz wave to be generated for a time during which a set having the receiving antenna and the detector is operated; and a digital signal processor configured to generate data on the basis of a difference value between a first oscillation frequency generated by the voltage-controlled oscillator while the first control signal is input to the detector and a second oscillating frequency generated by the voltage-controlled oscillator while the second control signal is input to the detector.

14 . The terahertz imaging sensor apparatus for high data rate of claim 5 , wherein measuring device includes:
a load resistance connected between the detector and a ground; and an input capacitor connected between the detector and the ground, and reads out an electric current flowing in the load resistance.

15 . The terahertz imaging sensor apparatus for high data rate of claim 14 , wherein the measuring device reads out the electric current using the following equation:
I= 1/( R ch +R LI ∥C LI )*Δ V *(1/ω C LI /(1/ω C LI +R LI ))
wherein I: electric current flowing in the load resistance ΔV: DC output voltage of the transistor generated by a terahertz wave R ch : channel resistance between a source and a drain of the transistor R LI : load resistance of the measuring device C LI : input capacitor of the measuring device.

Assignees

• Korea Advanced Inst Sci & Tech

Inventors

• Lee Sang-Gug
• Kim Sun-A
• Park Dae-Woong
• Han Seok-Kyun

Classifications

• G01J1/44 Primary

  Electric circuits {(for command of an exposure part G03B7/02)} · CPC title

• G01J1/0407

  Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings · CPC title