Polycrystalline diamond, polycrystalline diamond compacts, methods of making same, and applications

Patent metadata

Field	Value
Publication number	US-2016207169-A1
Application number	US-201615080379-A
Country	US
Kind code	A1
Filing date	Mar 24, 2016
Priority date	Oct 3, 2008
Publication date	Jul 21, 2016
Grant date	—

Abstract

Embodiments of the invention relate to polycrystalline diamond compacts (“PDC”) exhibiting enhanced diamond-to-diamond bonding. In an embodiment, a PDC includes a polycrystalline diamond (“PCD”) table bonded to a substrate. At least a portion of the PCD table includes a plurality of diamond grains defining a plurality of interstitial regions. The plurality of interstitial regions includes a metal-solvent catalyst. The plurality of diamond grains exhibit an average grain size of about 30 μm or less. The plurality of diamond grains and the metal-solvent catalyst collectively exhibit an average electrical conductivity of less than about 1200 S/m. Other embodiments are directed to PCD, employing such PCD, methods of forming PCD and PDCs, and various applications for such PCD and PDCs in rotary drill bits, bearing apparatuses, and wire-drawing dies.

First claim

1 . A polycrystalline diamond compact, comprising:
a polycrystalline diamond table, at least a portion of the polycrystalline diamond table including:
a plurality of diamond grains defining a plurality of interstitial regions, the plurality of diamond grains exhibiting an average grain size of about 50 μm or less;
a catalyst occupying at least a portion of the plurality of interstitial regions;
wherein the at least a portion of the polycrystalline diamond table exhibits a coercivity of about 115 Oe or more;
wherein the at least a portion of the polycrystalline diamond table exhibits an average electrical conductivity of less than about 1200 S/m; and
wherein the polycrystalline diamond table exhibits a G ratio of at least about 4.0×10 6 ; and
a substrate bonded to the polycrystalline diamond table.

2 . The polycrystalline diamond compact of claim 1 wherein the coercivity is about 115 Oe to about 250 Oe.

3 . The polycrystalline diamond compact of claim 2 wherein the coercivity is about 130 Oe to about 160 Oe.

4 . The polycrystalline diamond compact of claim 1 wherein the at least a portion of the polycrystalline diamond table exhibits a specific magnetic saturation of about 15 G·cm 3 /g or less.

5 . The polycrystalline diamond compact of claim 4 wherein the specific magnetic saturation is about 5 G·cm 3 /g to about 15 G·cm 3 /g.

6 . The polycrystalline diamond compact of claim 1 wherein the average electrical conductivity is about 25 S/m to about 1000 S/m.

7 . The polycrystalline diamond compact of claim 6 wherein the average electrical conductivity is about 100 S/m to about 500 S/m.

8 . The polycrystalline diamond compact of claim 1 wherein the coercivity is about 115 Oe to about 175 Oe.

9 . The polycrystalline diamond compact of claim 8 wherein the average electrical conductivity is less than 750 S/m.

10 . The polycrystalline diamond compact of claim 8 wherein the at least a portion of the polycrystalline diamond table exhibits a specific magnetic saturation of about 5 G·cm 3 /g to about 15 G·cm 3 /g.

11 . The polycrystalline diamond compact of claim 1 wherein the G ratio is about 5.0×10 6 to about 15×10 6 .

12 . The polycrystalline diamond compact of claim 1 wherein the at least a portion of the polycrystalline diamond table exhibits a specific permeability less than about 0.10 G·cm 3 /(g·Oe).

13 . The polycrystalline diamond compact of claim 1 wherein the catalyst is present in the at least a portion of the polycrystalline diamond table in an amount greater than 0 weight % to about 7.5 weight %.

14 . The polycrystalline diamond compact of claim 1 wherein the polycrystalline diamond table exhibits one or more characteristics of being formed in a high-pressure/high-temperature process at a cell pressure of at least about 7.5 GPa.

15 . The polycrystalline diamond compact of claim 1 wherein the average grain size is about 30 μm or less.

16 . The polycrystalline diamond compact of claim 1 wherein:
the polycrystalline diamond table includes an upper working surface and an interfacial surface bonded to the substrate; and
the average electrical conductivity of the polycrystalline diamond table decreases with distance from the upper working surface toward the substrate.

17 . The polycrystalline diamond compact of claim 1 wherein the polycrystalline diamond table is formed from only single layer of polycrystalline diamond extending from an upper working surface of the polycrystalline diamond table to the substrate.

18 . The polycrystalline diamond compact of claim 1 wherein the polycrystalline diamond table includes:
a first layer including coarse-sized diamond grains exhibiting a first average grain size; and
a second layer including fine-sized diamond grains exhibiting a second average grain size less than the first average grain size, the first layer disposed between the second layer and the substrate.

19 . A polycrystalline diamond compact, comprising:
a polycrystalline diamond table, at least a portion of the polycrystalline diamond table including:
a plurality of diamond grains defining a plurality of interstitial regions, the plurality of diamond grains exhibiting an average grain size of about 30 μm or less;
a catalyst occupying at least a portion of the plurality of interstitial regions;
wherein at least a portion of the polycrystalline diamond table exhibits a coercivity of about 115 Oe to about 175 Oe;
wherein the at least a portion of the polycrystalline diamond table exhibits an average electrical conductivity of less than about 1200 S/m; and
wherein the polycrystalline diamond table exhibits a G ratio of at least about 4.0×10 6 .

20 . A polycrystalline diamond compact, comprising:
a polycrystalline diamond table, at least a portion of the polycrystalline diamond table including:
a plurality of diamond grains defining a plurality of interstitial regions, the plurality of diamond grains exhibiting an average grain size of about 50 μm or less;
a catalyst occupying at least a portion of the plurality of interstitial regions, the catalyst is present in the at least a portion of the polycrystalline diamond table in an amount greater than about 0 weight % to about 7.5 weight %;
wherein the at least a portion of the polycrystalline diamond table exhibits a coercivity of about 115 Oe or more;
wherein the at least a portion of the polycrystalline diamond table exhibits an average electrical conductivity of less than about 1200 S/m; and
wherein the polycrystalline diamond table exhibits a G ratio of at least about 4.0×10 6 ; and
a substrate bonded to the polycrystalline diamond table.

Assignees

• Us Synthetic Corp

Inventors

• Bertagnolli Kenneth E
• Qian Jiang
• Wiggins Jason K
• Vail Michael A
• Mukhopadhyay Debkumar
• Linford Brandon P

Classifications

• F16C17/04

  for axial load only · CPC title

• F16C33/043

  Sliding surface consisting mainly of ceramics, cermets or hard carbon, e.g. diamond like carbon [DLC] · CPC title

• C22C26/00

  Alloys containing diamond {or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes} · CPC title

• F16C17/02

  for radial load only · CPC title

• B22F2005/001

  Cutting tools, earth boring or grinding tool other than table ware · CPC title