Organic optoelectronic component

Patent metadata

Field	Value
Publication number	US-2016204378-A1
Application number	US-201414916560-A
Country	US
Kind code	A1
Filing date	Sep 2, 2014
Priority date	Sep 4, 2013
Publication date	Jul 14, 2016
Grant date	—

Abstract

The invention relates to an organic optoelectronic component comprising a substrate ( 101 ) on which a first electrode ( 102 ), then an organic functional layer stack ( 103 ) having at least one organic optoelectronic layer, and then a second electrode ( 104 ) are successively arranged. A thin film encapsulation ( 107 ) is arranged over the second electrode ( 104 ) and in addition to the second electrode ( 104 ), at least one first intermediate layer ( 121 ) having a hardness which is different from the layer which is directly adjacent thereto is arranged between the organic functional layer stack ( 103 ) and the thin-film encapsulation ( 107 ).

First claim

1 . An organic optoelectronic component, comprising
a substrate, on which a first electrode, thereabove an organic functional layer stack having at least one organic optoelectronic layer, and thereabove a second electrode are arranged, above the second electrode a thin-film encapsulation and between the organic functional layer stack and the thin-film encapsulation in addition to the second electrode at least one first intermediate layer having a different hardness than a directly adjacent layer.

2 . The component according to claim 1 , wherein the at least one first intermediate layer is constructed to protect the organic functional layer stack against damage as a result of dirt particles, in particular dirt particles situated between the second electrode and the thin-film encapsulation.

3 . The component according to claim 1 , wherein
the at least one first intermediate layer is arranged between the second electrode and the thin-film encapsulation, and the at least one first intermediate layer has a lower hardness than an underlying layer directly adjoining the first intermediate layer, and than an overlying layer directly adjoining the first intermediate layer.

4 . The component according to claim 3 , wherein the first intermediate layer has a thickness of greater than or equal to 200 nm and less than or equal to 10 μm.

5 . The component according to claim 3 , wherein the underlying layer directly adjoining the first intermediate layer is the second electrode.

6 . The component according to claim 5 , wherein the second electrode comprises Al, Ag, Mg or a combination thereof, and the first intermediate layer comprises In, Ga, Zn or a combination thereof.

7 . The component according to claim 3 , wherein the underlying layer directly adjoining the first intermediate layer is a second intermediate layer, which is arranged on the second electrode and which has a greater hardness than the second electrode.

8 . The component according to claim 7 , wherein the second intermediate layer comprises Cr, Wo, V, Os, Ru, Ir or a combination thereof.

9 . The component according to claim 3 , wherein the overlying layer directly adjoining the first intermediate layer is formed by a layer of the thin-film encapsulation.

10 . The component according to claim 1 , wherein
the at least one first intermediate layer is arranged between the second electrode and the thin-film encapsulation, and the at least one first intermediate layer directly adjoins the second electrode and has a greater hardness than the second electrode.

11 . The component according to claim 10 , wherein the first intermediate layer has a lower hardness than a layer of the thin-film encapsulation that directly adjoins the first intermediate layer.

12 . The component according to claim 11 , wherein the second electrode comprises Al, Ag, Mg or a combination thereof and the first intermediate layer comprises Ni, Ti, V or a combination thereof.

13 . The component according to claim 10 , wherein the first intermediate layer has a greater hardness than a layer of the thin-film encapsulation that directly adjoins the first intermediate layer.

14 . The component according to claim 13 , wherein the second electrode comprises Al, Ag, Mg or a combination thereof and the first intermediate layer comprises Cr, Wo, V, Os, Ru, Ir or a combination thereof.

15 . The component according to claim 10 , wherein a second intermediate layer directly adjoining the first intermediate layer is arranged between the first intermediate layer and the thin-film encapsulation, and the first intermediate layer has a greater hardness than the second intermediate layer.

16 . The component according to claim 1 , wherein the at least one first intermediate layer completely covers the second electrode.

17 . The component according to claim 1 , wherein the first intermediate layer is arranged on that side of the second electrode which faces the organic functional layer stack in a manner directly adjoining the second electrode and has a greater hardness than the second electrode.

18 . The component according to claim 17 , wherein the first intermediate layer is formed by an electrically insulating material and is embodied as a tunnel layer for electrical charge carriers.

19 . The component according to claim 17 , wherein the second electrode comprises aluminum and the first intermediate layer comprises aluminum oxide.

20 . The component according to claim 17 , wherein the first intermediate layer comprises one or a plurality of materials selected from silicon nitride, silicon oxide, silicon carbide, boron carbide, boron nitride, aluminum nitride, aluminum oxide, aluminum tungsten nitride.

Assignees

• Osram Oled Gmbh

Inventors

• Popp Michael
• Baisl Richard

Classifications

• H10K50/826

  Multilayers, e.g. opaque multilayers · CPC title

• H10K50/844 Primary

  Encapsulations · CPC title

• H10K50/171 Primary

  Electron injection layers · CPC title

• H01L2251/303

  Electricity · mapped topic

• H01L2251/558

  Electricity · mapped topic