Display panel and method for manufacturing thereof
US-2015349029-A1 · Dec 3, 2015 · US
US2016204167A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016204167-A1 |
| Application number | US-201514877826-A |
| Country | US |
| Kind code | A1 |
| Filing date | Oct 7, 2015 |
| Priority date | Jan 9, 2015 |
| Publication date | Jul 14, 2016 |
| Grant date | — |
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A display device includes a substrate; a plurality of color filters on the substrate, a common electrode covering the plurality of color filters, a white emission layer covering the common electrode, a plurality of pixel electrodes on the white emission layer and a plurality of pixel switching elements on the plurality of pixel electrodes and connected to the plurality of pixel electrodes, wherein the white emission layer includes a plurality of quantum dots.
Opening claim text (preview).
What is claimed is: 1 . A display device comprising: a substrate; a plurality of color filters on the substrate; a common electrode covering the plurality of color filters; a white emission layer covering the common electrode; a plurality of pixel electrodes on the white emission layer; and a plurality of pixel switching elements on the plurality of pixel electrodes and connected to the plurality of pixel electrodes, wherein the white emission layer comprises a plurality of quantum dots. 2 . The display device of claim 1 , wherein the plurality of pixel switching elements comprises: a first insulating layer covering the pixel electrode; a gate electrode on the first insulating layer; a second insulating layer covering the gate electrode; a semiconductor on the second insulating layer and overlapping the gate electrode; a third insulating layer covering the semiconductor; and a source electrode and a drain electrode on the third insulating layer, and respectively connected to the semiconductor through a pair of contact holes at the third insulating layer, wherein the drain electrode is connected to the pixel electrode. 3 . The display device of claim 2 , further comprising a connecting member at a same layer as the gate electrode, wherein the connecting member connects the drain electrode and the pixel electrode to each other. 4 . The display. device of claim 3 , wherein the connecting member is connected to the pixel electrode through a first connection hole at the first insulating layer, and is connected to the drain electrode through a second connection hole at the second insulating layer and the third insulating layer. 5 . The display device of claim 4 , further comprising: a light blocking member between the plurality of color filters; and an auxiliary electrode on the light blocking member, wherein the auxiliary electrode is in contact with the common electrode. 6 . The display device of claim 4 , further comprising: an encapsulation layer covering the plurality of pixel switching elements. 7 . The display device of claim 4 , further comprising: an electron transporting layer and a hole transporting layer at respective sides of the white emission layer, wherein the electron transporting layer and the hole transporting layer comprise an inorganic layer. 8 . A method for manufacturing a display device, the comprising; forming a plurality of color filters on a substrate; forming a common electrode covering the plurality of color filters; forming a white emission layer covering the common electrode; forming a plurality of pixel electrodes covering the white emission layer; and forming a plurality of pixel switching elements connected to the plurality of pixel electrodes on the plurality of pixel electrodes, wherein the white emission layer comprises a plurality of quantum dots. 9 . The method of claim 8 , wherein the forming the pixel switching elements comprises: forming a first insulating layer covering the plurality of pixel electrodes; forming a gate electrode on the first insulating layer; forming a second insulating layer covering the gate electrode; forming a semiconductor overlapping the gate electrode on the second insulating layer; forming a third insulating layer covering the semiconductor; forming a pair of contact holes at the third insulating layer to expose the semiconductor; and forming a source electrode and a drain electrode respectively connected to the semiconductor through the pair of contact holes at the third insulating layer, wherein the drain electrode is connected to the pixel electrode. 10 . The method of claim 9 , further comprising: forming a connecting member connecting the drain electrode and the pixel electrode, at the same layer as the gate electrode. 11 . The method of claim 10 , further comprising: forming a first connection hole exposing a portion of the pixel electrode, in the first insulating layer, and wherein the forming the pair of contact holes at the third insulating layer comprises, forming a second connection hole exposing a portion of the connecting member, at the second insulating layer and the third insulating layer. 12 . The method of claim 11 , wherein the connecting member is connected to the pixel electrode through the first connection hole, and is connected to the drain electrode through the second connection hole. 13 . The method of claim 8 , further comprising: forming a light blocking member on the substrate; and forming an auxiliary electrode on the light blocking member. 14 . The method of claim 8 , further comprising: forming an encapsulation layer covering a plurality of pixel switching elements.
combined with auxiliary electrodes · CPC title
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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