Semiconductor device and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-2016204047-A1
Application number	US-201514913719-A
Country	US
Kind code	A1
Filing date	Jan 9, 2015
Priority date	Jan 20, 2014
Publication date	Jul 14, 2016
Grant date	—

Abstract

A semiconductor device includes: a semiconductor element having a solder region and a non-solder region on a first face; a first metal member disposed on the first face of the semiconductor element; a second metal member disposed on a rear face of the semiconductor element; a first solder that connects the solder region of the semiconductor element and the first metal member; and a second solder that connects the rear face of the semiconductor element and the second metal member. At least the second solder provides a melt-bond. A gravity center position of the first metal member coincides with a center position of the semiconductor element in a projection view from a stacking direction.

First claim

1 . A semiconductor device comprising:
a semiconductor element having a first face and a rear face opposite to the first face, the first face including a solder region for soldering and a non-solder region not for soldering, the rear face being for soldering; a first metal member disposed on the first face of the semiconductor element; a second metal member disposed on the rear face of the semiconductor element; a first solder that connects the solder region of the semiconductor element and the first metal member; and a second solder that connects the rear face of the semiconductor element and the second metal member, wherein: at least the second solder provides a melt-bond in the semiconductor device, in which the semiconductor element is stacked on the second metal member through the second solder, and the first metal member is stacked on the semiconductor element through the first solder; and a gravity center position of the first metal member coincides with a center position of the semiconductor element in a projection view from a stacking direction.

2 . The semiconductor device according to claim 1 , wherein:
the first metal member has a weight deviation within a plane perpendicular to the stacking direction.

3 . The semiconductor device according to claim 2 , wherein:
the first metal member has a partially different thickness.

4 . The semiconductor device according to claim 3 , wherein:
the first metal member includes a cut portion arranged on a surface of the first metal member opposite to a facing surface facing the semiconductor element.

5 . The semiconductor device according to claim 4 , further comprising:
a third metal member disposed at a side of the first metal member opposite to the semiconductor element; and a third solder ( 30 ) that connects the first metal member and the third metal member.

6 . The semiconductor device according to claim 3 , wherein:
the first metal member includes a projection arranged on a side of the first metal member adjacent to a facing surface facing the semiconductor element.

7 . The semiconductor device according to claim 3 , wherein:
the first metal member includes a cavity opening on a side of the first metal member adjacent to a facing surface facing the semiconductor element.

8 . The semiconductor device according to claim 2 , wherein:
the first metal member has a density of material constituting the first metal member, which is partially different within the plane perpendicular to the stacking direction.

9 . The semiconductor device according to claim 1 , wherein:
the solder region and the non-solder region of the semiconductor element are arranged that a center position of the solder region coincides with the center position of the first face within the plane perpendicular to the stacking direction.

10 . The semiconductor device according to claim 9 , wherein:
a part of the non-solder region is located on one end side of the solder region, and at least a portion of a remaining part of the non-solder region is located on another end side of the solder region in a first direction perpendicular to the stacking direction; the semiconductor element includes a plurality of kinds of external connection pads in the one end side of the non-solder region, and includes same kinds and same number of external connection pads, as the external connection pads in the one end side of the non-solder region, in the another end side of the non-solder region; and the plurality of kinds of external connection pads in the one end side of the non-solder region are arranged in a predetermined order along a second direction perpendicular to the first direction, and the external connection pads in the another end side of the non-solder region are arranged in a same order as the external connection pads in the one end side of the non-solder region along the second direction.

11 . The semiconductor device according to claim 1 , wherein:
the gravity center position of the first metal member and the center position of the semiconductor element are located on a straight line parallel to the stacking direction.

12 . The semiconductor device according to claim 1 , wherein:
the first solder provides a melt-bond; and the melt-bond of the first solder and the melt-bond of the second solder are reflow bonds.

13 . A method for manufacturing the semiconductor device according to claim 5 , in which the first solder and the second solder provide reflow bonds as the melt-bond, the method for manufacturing the semiconductor device comprising:
preliminary applying the first solder onto the facing surface of the first metal member including the cut portion, the facing surface facing the semiconductor element, and preliminary applying the third solder onto the surface opposite to the facing surface so as to cover the cut portion; arranging the semiconductor element on the second metal member through the second solder, arranging the first metal member on the semiconductor element through the first solder, reflowing the first solder and the second solder in an arrangement of the semiconductor element and the first metal member, and forming a connection body having the second metal member, the semiconductor element, and the first metal member integrated together; and arranging the connection body on the third metal member through the third solder so as to face the third metal member, and reflowing the third solder while applying pressure from the second metal member.

14 . A method for manufacturing the semiconductor device according to claim 5 , in which the first solder and the second solder provide reflow bonds as the melt-bond, the method for manufacturing the semiconductor device comprising:
preliminary applying the first solder onto the facing surface of the first metal member including the cut portion, the facing surface facing the semiconductor element; arranging the semiconductor element on the second metal member through the second solder, arranging the first metal member on the semiconductor element through the first solder, reflowing the first solder and the second solder in an arrangement of the semiconductor element and the first metal member, and forming a connection body having the second metal member, the semiconductor element, and the first metal member integrated together; and arranging the third solder on the third metal member, arranging the connection body on the third metal member so as to face the third solder and the first metal member, and reflowing the third solder in an arrangement of the connection body while applying pressure from the second metal member

Assignees

• Denso Corp

Inventors

• Sugiura Shun
• Ookura Yasushi

Classifications

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/736

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W72/07533

  Ultrasonic bonding, e.g. thermosonic bonding · CPC title

• H10W72/07354

  changes in dispositions · CPC title