Touch panel, manufacturing method thereof and display device

Patent metadata

Field	Value
Publication number	US-2016202795-A1
Application number	US-201514892409-A
Country	US
Kind code	A1
Filing date	Jun 5, 2015
Priority date	Dec 3, 2014
Publication date	Jul 14, 2016
Grant date	—

Abstract

A touch panel, a manufacturing method thereof and a display device are disclosed. The method for manufacturing the touch panel includes: forming touch electrodes ( 4 ) with topological semiconductor characteristics on a substrate ( 1 ), in which the touch electrodes ( 4 ) with topological semiconductor characteristics are obtained by a topological treatment on a Ge film with functionalized elements. The touch panel manufactured by the method and the display device including the touch panel have high touch sensitivity.

First claim

1 . A method for manufacturing a touch panel, comprising:
forming touch electrodes with topological semiconductor characteristics on a substrate, in which the touch electrodes with topological semiconductor characteristics are obtained by a topological treatment on a germanium (Ge) film with functionalized elements.

2 . The manufacturing method according to claim 1 , wherein forming of the touch electrodes with topological semiconductor characteristics on the substrate includes:
forming the Ge film on the substrate and forming a touch electrode pattern by a patterning process; and obtaining the touch electrodes with topological semiconductor characteristics through the topological treatment on the Ge film with the functionalized elements.

3 . The manufacturing method according to claim 1 , wherein the functionalized elements comprise fluorine, chlorine, bromine or iodine elements.

4 . The manufacturing method according to claim 3 , wherein obtaining of the touch electrodes with topological semiconductor characteristics through the topological treatment on the Ge film with the functionalized elements includes:
obtaining a germanium halide film with topological semiconductor characteristics by halogenation of the Ge film via the fluorine, chlorine, bromine or iodine elements.

5 . The manufacturing method according to claim 4 , wherein the halogenation of the Ge film includes:
halogenating the Ge film by a gas-phase process; or halogenating the Ge film by a liquid-phase process; or halogenating the Ge film by a surface modification process; or halogenating the Ge film by a plasma treatment.

6 . The manufacturing method according to claim 5 , wherein in a case of halogenating the Ge film by a liquid-phase process, halogenating of the Ge film includes:
forming a germanium bromide film after halogenating the Ge film in atmosphere of liquid bromine, in which a concentration of the liquid bromine is 1% to 10%, and a processing temperature is 40 to 80° C.

7 . The manufacturing method according to claim 5 , wherein in a case of halogenating the Ge film by a gas-phase process, halogenating of the Ge film includes:
forming a germanium iodide film after halogenating the Ge film in atmosphere of iodine gas, with a gas pressure of 1-10 Pa and a processing temperature of 60-100° C.; or forming a germanium bromide film after halogenating the Ge film in atmosphere of bromine gas, with a gas pressure of 1-10 Pa and a processing temperature of 50-400° C.; or forming a germanium chloride film after annealing the Ge film for 10 minutes in atmosphere of chlorine gas with a processing temperature of 50-400° C.

8 . The manufacturing method according to claim 5 , wherein in a case of halogenating the Ge film by a gas-phase process, halogenating of the Ge film includes:
forming a germanium chloride film after halogenation of the Ge film in atmosphere of BCl3 gas, with a gas pressure of 1-10 Pa and a processing temperature of 250-350° C., and annealing the Ge film in atmosphere of halogen gas with a temperature of 90-130° C.

9 . The manufacturing method according to claim 5 , wherein in case of halogenating the Ge film by a surface modification process, halogenating of the Ge film includes:
coating a halogen-containing organic colloid material on the substrate; and pressing one side of the substrate coated with the organic colloid material onto the Ge film, so that halogen atoms in the organic colloid material are transferred to the Ge film, and hence halogenation of the Ge film can be achieved.

10 . The manufacturing method according to claim 5 , wherein in case of halogenating the Ge film by a plasma treatment, halogenating of the Ge film includes:
bombing a surface of the Ge film with halogen plasmas in an inductively coupled plasma (ICP) or reactive ion etching (RIE) apparatus, so that the halogen plasmas are adsorbed into the Ge film, and hence halogenation of the Ge film can be achieved.

11 . The manufacturing method according to claim 1 , wherein the functionalized elements comprise hydrogen, nitrogen, boron or sulfur elements.

12 . The manufacturing method according to claim 1 , wherein forming of the Ge film includes:
forming the Ge film by an atomic layer deposition method; or forming the Ge film by a chemical vapor deposition (CVD) method; or forming the Ge film by a mechanical exfoliation transfer method; or forming the Ge film by a magnetron sputtering process; or forming the Ge film by a pulse laser deposition process.

13 . The manufacturing method according to claim 1 , wherein the touch electrodes include first electrodes and second electrodes;
the first electrodes are driving electrodes and the second electrodes are sensing electrodes; or the first electrodes are sensing electrodes and the second electrodes are driving electrodes.

14 . A touch panel, comprising a substrate and touch electrodes formed on the substrate, wherein the touch electrodes are a Ge-containing topological semiconductor film.

15 . The touch panel according to claim 14 , wherein the Ge-containing topological semiconductor film is a germanium halide film formed through halogenation of the Ge film with fluorine, chlorine, bromine or iodine elements.

16 . The touch panel according to claim 15 , wherein the germanium halide film is a single atomic layer germanium halide film, a double atomic layer germanium halide film, or a multi-atomic layer germanium halide film.

17 . (canceled)

18 . The touch panel according to claim 14 , wherein the Ge-containing topological semiconductor film is a topological semiconductor film formed through a topological treatment on the Ge film with hydrogen, nitrogen, boron or sulfur elements.

19 . The touch panel according to claim 14 , wherein the touch electrodes include first electrodes and second electrodes, in which
the first electrodes are driving electrodes and the second electrodes are sensing electrodes; or the first electrodes are sensing electrodes and the second electrodes are driving electrodes.

20 . The touch panel according to claim 19 , wherein the first electrodes are disposed on the substrate; the second electrode is disposed on one side of the first electrode away from the substrate; the first electrodes and the second electrodes are arranged in the same layer;
an overlapped portion of each first electrode and each second electrode is provided with: a bridge metal layer disposed between the substrate and the second electrode, and an insulating layer disposed between the bridge metal layer and the second electrode, in which the insulating layer is provided with a through hole, and the first electrode is electrically connected with the bridge metal layer via the through hole of the insulating layer.

21 . (canceled)

22 . (canceled)

23 . (canceled)

24 . (canceled)

25 . A display device comprising the touch panel according to claim 14 .

Assignees

• Boe Technology Group Co Ltd

Inventors

• Wang Long
• Li Yanzhao
• Qiao Yong
• Lu Yongchun

Classifications

• H10D30/6741

  Group IV materials, e.g. germanium or silicon carbide (TFTs having oxide semiconductors H10D30/6755) · CPC title

• G06F3/044 Primary

  by capacitive means · CPC title

• G06F2203/04103

  Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices · CPC title

• G06F2203/04111

  Cross over in capacitive digitiser, i.e. details of structures for connecting electrodes of the sensing pattern where the connections cross each other, e.g. bridge structures comprising an insulating layer, or vias through substrate · CPC title

• G06F3/0443 Primary

  using a single layer of sensing electrodes · CPC title