Composite Abrasive Particles For Chemical Mechanical Planarization Composition and Method of Use Thereof

Patent metadata

Field	Value
Publication number	US-2016200944-A1
Application number	US-201614993128-A
Country	US
Kind code	A1
Filing date	Jan 12, 2016
Priority date	Jan 12, 2015
Publication date	Jul 14, 2016
Grant date	—

Abstract

Chemical Mechanical Planarization (CMP) polishing compositions comprising composite particles, such as ceria coated silica particles, offer low dishing, low defects, and high removal rate for polishing oxide films. Chemical Mechanical Planarization (CMP) polishing compositions have shown excellent performance using soft polishing pad.

First claim

1 . A polishing composition comprising:
composite particles comprising core particles with surfaces covered by nanoparticles; an additive selected from a compound having a functional group selected from the group consisting of organic carboxylic acids, amino acids, amidocarboxylic acids, N-acylamino acids, and their salts thereof; organic sulfonic acids and salts thereof; organic phosphonic acids and salts thereof; polymeric carboxylic acids and salts thereof; polymeric sulfonic acids and salts thereof; polymeric phosphonic acids and salts thereof; arylamines, aminoalcohols, aliphatic amines, heterocyclic amines, hydroxamic acids, substituted phenols, sulfonamides, thiols, polyols having hydroxyl groups, and combinations thereof; a pH-adjusting agent selected from the group consisting of sodium hydroxide, potassium hydroxide, cesium hydroxide, ammonium hydroxide, quaternary organic ammonium hydroxide, and combinations thereof; and the remaining being water; wherein the core particle is selected from the group consisting of silica, alumina, titania, zirconia, polymer particle, and combinations thereof; and the nanoparticle is selected from the compounds of a group consisting of zirconium, titanium, iron, manganese, zinc, cerium, yttrium, calcium, magnesium, fluorine, lanthanum, strontium nanoparticle, and combinations thereof; change of size distribution of composite particles under a disintegrative force is less than 10%; and the polishing composition has a pH of about 2 to about 12.

2 . The polishing composition of claim 1 wherein the core particle is silica particle, the nanoparticle is ceria nanoparticle, and the composite particles are ceria coated silica composite particles.

3 . The polishing composition of claim 2 wherein the composite particles are amorphous silica ceria particles having surfaces covered by singly crystalline ceria nanoparticles.

4 . The polishing composition of claim 1 has a pH ranging from 4 to 10; and the change of size distribution of composite particles under a disintegrative force is less than 5%.

5 . The polishing composition of claim 1 comprises ceria coated silica composite particles, the additive selected from the group consisting of polyacrylic acid (PAA) or salt, poly(methyl methacrylate) (PMMA), and combinations thereof; ammonium hydroxide; has a pH ranging from 4.5 to 7.5; and the change of size distribution of composite particles under a disintegrative force is less than 2%.

6 . The polishing composition of claim 1 further comprises
a surfactant selected from the group consisting of a). non-ionic surface wetting agents; b). anionic surface wetting agents; c). cationic surface wetting agents; d). ampholytic surface wetting agents; and mixtures thereof;
and
a biological growth inhibitor selected from the group consisting of tetramethylammonium chloride, tetraethylammonium chloride, tetrapropylammonium chloride, alkylbenzyldimethylammonium chloride with the alkyl chain ranges from 1 to about 20 carbon atoms, alkylbenzyldimethylammonium hydroxide with the alkyl chain ranges from 1 to about 20 carbon atoms, sodium chlorite, sodium hypochlorite, and combinations thereof.

7 . A polishing method for chemical mechanical planarization of a semiconductor substrate comprising at least one surface having at least one oxide layer, comprising the steps of:
a) contacting the at least one oxide layer with a polishing pad; b) delivering a polishing composition to the at least one surface, the polishing composition comprising:
composite particles comprising core particles with surfaces covered by nanoparticles;
an additive selected from a compound having a functional group selected from the group consisting of organic carboxylic acids, amino acids, amidocarboxylic acids, N-acylamino acids, and their salts thereof; organic sulfonic acids and salts thereof; organic phosphonic acids and salts thereof; polymeric carboxylic acids and salts thereof; polymeric sulfonic acids and salts thereof; polymeric phosphonic acids and salts thereof; arylamines, aminoalcohols, aliphatic amines, heterocyclic amines, hydroxamic acids, substituted phenols, sulfonamides, thiols, polyols having hydroxyl groups, and combinations thereof;
a pH-adjusting agent selected from the group consisting of sodium hydroxide, potassium hydroxide, cesium hydroxide, ammonium hydroxide, quaternary organic ammonium hydroxide, and combinations thereof;
and
the remaining being water;
wherein
change of size distribution of composite particles under a disintegrative force is less than 10%;
the core particle is selected from the group consisting of silica, alumina, titania, zirconia, polymer particle, and combinations thereof; and the nanoparticle is selected from the compounds of a group consisting of zirconium, titanium, iron, manganese, zinc, cerium, yttrium, calcium, magnesium, fluorine, lanthanum, strontium nanoparticle, and combinations thereof; and
the polishing composition has a pH of about 2 to about 12;
and c) polishing the at least one oxide layer with the polishing composition.

8 . The method of claim 7 , wherein the nanoparticle is ceria nanoparticle, the nanoparticle is ceria nanoparticle, and the composite particles are amorphous silica ceria particles having surfaces covered by singly crystalline ceria nanoparticles.

9 . The method of claim 7 , wherein the polishing composition has a pH ranging from 4 to 10; and the change of size distribution of composite particles under a disintegrative force is less than 5%.

10 . The method of claim 7 , wherein the polishing composition further comprises
a surfactant selected from the group consisting of a). non-ionic surface wetting agents; b). anionic surface wetting agents; c). cationic surface wetting agents; d). ampholytic surface wetting agents; and mixtures thereof; and a biological growth inhibitor selected from the group consisting of tetramethylammonium chloride, tetraethylammonium chloride, tetrapropylammonium chloride, alkylbenzyldimethylammonium chloride with the alkyl chain ranges from 1 to about 20 carbon atoms, alkylbenzyldimethylammonium hydroxide with the alkyl chain ranges from 1 to about 20 carbon atoms, sodium chlorite, sodium hypochlorite, and combinations thereof.

11 . The method of claim 7 , wherein the polishing composition comprises ceria coated silica composite particles, the additive selected from the group consisting of polyacrylic acid (PAA) or salt, poly(methyl methacrylate) (PMMA), and combinations thereof; ammonium hydroxide; has a pH ranging from 4.5 to 7.5;
and the change of size distribution of composite particles under a disintegrative force is less than 2%.

12 . The method of claim 7 , wherein the at least one oxide layer is a silicon oxide layer.

13 . The method of claim 7 , wherein the polishing pad is a soft pad.

14 . The method of claim 13 , wherein polishing removal rate for the at least one oxide layer is equal or greater than 500 Å/min.

15 . A system for chemical mechanical planarization, comprising:
a semiconductor substrate comprising at least one surface having at least one oxide layer; a polishing pad; and a polishing composition comprising:
composite particles comprising core particles with surfaces covered by nanoparticles;
an additive selected from a compound having a functional group selected from the group consisting of organic carboxylic acids, amino acids, amidocarboxylic acids, N-acylamino acids, and their salts thereof; organic sulfonic acids and salts thereof; organic phosphonic acids and salts thereof; polymeric carboxylic acids and salts thereof; polymeric sulfonic acids

Assignees

• Air Prod & Chem

Inventors

• Zhou Hongjun
• Schwartz Jo-Ann Theresa
• Grief Malcolm
• Shi Xiaobo
• Murella Krishna P
• Winchester Steven Charles
• Hughes John Edward Quincy
• O'Neill Mark Leonard
• Dodd Andrew J
• Tamboli Dnyanesh Chandrakant
• Machado Reinaldo Mario

Classifications

• H10P95/062

  involving a dielectric removal step · CPC title

• H10P52/402 Primary

  of semiconductor materials · CPC title

• B24B37/24

  characterised by the composition or properties of the pad materials · CPC title

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• C09K3/1445

  the coating consisting exclusively of metals · CPC title