Substrate for organic light-emitting diode, method for manufacturing same, and organic light-emitting diode comprising same

Patent metadata

Field	Value
Publication number	US-2016197314-A1
Application number	US-201414912002-A
Country	US
Kind code	A1
Filing date	Aug 12, 2014
Priority date	Aug 14, 2013
Publication date	Jul 7, 2016
Grant date	—

Abstract

The present invention relates to a substrate for an organic light-emitting diode, a method for manufacturing the same, and an organic light-emitting diode comprising the same, and more particularly, to a substrate for an organic light-emitting diode, the substrate having excellent productivity and manufacturing efficiency as well as an improved light extraction efficiency, a method for manufacturing the same, and an organic light-emitting diode comprising the same. To this end, the present invention provides a substrate for an organic-light emitting diode, the substrate being disposed on one side of the organic light-emitting diode from which light irradiated thereby is emitted outside, the substrate comprising: a base plate; a light-scattering layer comprising a plurality of light-scattering particles, the light-scattering layer being formed on the base plate; and a transparent conductive film formed on the light-scattering layer, wherein a part of, or all of the pores formed between the plurality of light-scattering particles are filled with metal oxides forming the transparent conductive film; a method for manufacturing the same; and an organic light-emitting diode comprising the same.

First claim

1 - 5 . (canceled)

6 . A method of fabricating a substrate for an organic light-emitting device, the method comprising:
forming a light-scattering layer by depositing light-scattering particles on a base substrate which is disposed on one surface of an organic light-emitting device through which light from the organic light-emitting device is emitted by dry deposition such that a number of pores are formed between the light-scattering particles; and forming a transparent conductive film by depositing a conductive metal oxide on the light-scattering layer by dry deposition such that the conductive metal oxide fills all or part of the number of pores between the light-scattering particles.

7 . The method according to claim 6 , wherein the light-scattering particles are deposited on the base substrate using a precursor and an oxidizer, the precursor being selected from the group consisting of a ZnO precursor of diethyl zinc, a SiO 2 precursor of tetraethyl orthosilicate and a TiO 2 precursor of titanium isoproxide.

8 . The method according to claim 7 , wherein the oxidizer comprises at least one of vapor of H 2 O and ozone.

9 . The method according to claim 6 , wherein the process of depositing light-scattering particles on the base substrate comprises controlling a deposition temperature to be in a range from 300 to 500° C.

10 . The method according to claim 6 , wherein the conductive metal oxide is deposited on the light-scattering layer using an organic solvent of hydrocarbon, a ZnO precursor of diethyl zinc or dimethyl zinc and an oxidizer, the ZnO precursor being diluted in the organic solvent.

11 . The method according to claim 10 , wherein the oxidizer used at the process of depositing the conductive metal oxide on the light-scattering layer comprises at least one of vapor of H 2 O and ethanol.

12 . The method according to claim 6 , wherein depositing the conductive metal oxide on the light-scattering layer comprises controlling a deposition temperature to be in a range from 250 to 550° C.

13 . The method according to claim 6 , wherein depositing the conductive metal oxide on the light-scattering layer comprises adding a dopant to the conductive metal oxide.

14 . The method according to claim 6 , wherein the dry deposition comprises chemical vapor deposition.

15 . The method according to claim 14 , wherein the chemical vapor deposition comprises atmospheric pressure chemical vapor deposition.

16 . The method according to claim 16 , wherein depositing the light-scattering particles on the base substrate and depositing the conductive metal oxide on the light-scattering layer are continuously carried out in-line on a conveyor belt.

17 . (canceled)

18 . The method according to claim 6 , wherein the transparent conductive film serves as a transparent electrode of the organic light-emitting device.

19 . The method according to claim 6 , wherein diameters of the light-scattering particles range from 50 to 500 nm.

Assignees

• Corning Prec Materials Co Ltd

Inventors

• Yoon Gun Sang
• Park June Hyong
• Baek Il Hee

Classifications

• H10K50/82

  Cathodes · CPC title

• H10K50/81

  Anodes · CPC title

• H10K71/00

  Manufacture or treatment specially adapted for the organic devices covered by this subclass · CPC title

• H10K77/10 Primary

  Substrates, e.g. flexible substrates · CPC title

• H01L51/5206

  Electricity · mapped topic