New compound semiconductors and their application

Patent metadata

Field	Value
Publication number	US-2016197256-A1
Application number	US-201414437119-A
Country	US
Kind code	A1
Filing date	Sep 18, 2014
Priority date	Sep 27, 2013
Publication date	Jul 7, 2016
Grant date	—

Abstract

Disclosed is a new compound semiconductor material which may be used for thermoelectric material or the like, and its applications. The compound semiconductor may be represented by Chemical Formula 1 below: Chemical Formula 1 <Chemical Formula 1> Bi 2 Te x Se n−x In y M z where in Chemical Formula 1, M is at least one selected from the group consisting of Cu, Fe, Co, Ag and Ni, 2.5<x<3.0, 3.0≦a<3.5, 0<y and 0≦z.

First claim

1 . A compound semiconductor, represented by Chemical Formula 1 below:
Chemical Formula 1 Bi2TexSea−xInyMz  <Chemical Formula 1>
where, in Chemical Formula 1, M is at least one selected from the group consisting of Cu, Fe, Co, Ag and Ni, 2.5<x<3.0, 3.0≦a<3.5, 0<y and 0≦z.

2 . The compound semiconductor according to claim 1 ,
wherein, in Chemical Formula 1, y and z satisfy the conditions of 0<y<0.009 and 0≦z<0.09.

3 . The compound semiconductor according to claim 1 ,
wherein, in Chemical Formula 1, y+z satisfies the condition of 0.002<y+z<0.09.

4 . The compound semiconductor according to claim 1 ,
wherein, in Chemical Formula 1, y is 0.0068.

5 . The compound semiconductor according to claim 1 ,
wherein, in Chemical Formula 1, z is 0.0369.

6 . The compound semiconductor according to claim 1 ,
wherein, in Chemical Formula 1, a satisfies the condition of a>3.0.

7 . The compound semiconductor according to claim 1 , wherein the compound semiconductor is manufactured by a method including:
forming a mixture containing Bi, Te and Se; thermally treating the mixture; adding In to the thermally treated mixture; and pressure-sintering the In-added mixture.

8 . The compound semiconductor according to claim 7 ,
wherein, in the In adding step, M is further added together with In.

9 . The compound semiconductor according to claim 7 ,
wherein the thermal treatment step is performed by means of solid-state reaction.

10 . The compound semiconductor according to claim 7 ,
wherein the pressure sintering step is performed by means of spark plasma sintering.

11 . A preparation method of a compound semiconductor defined in the claim 1 , comprising:
forming a mixture containing Bi, Te and Se; thermally treating the mixture; adding In to the thermally treated mixture; and pressure-sintering the In-added mixture.

12 . The preparation method of a compound semiconductor according to claim 11 ,
wherein, in the In adding step, 0.1 wt % of In is added based on the entire weight of the mixture.

13 . The preparation method of a compound semiconductor according to claim 11 ,
wherein, in the In adding step, M is further added together with In.

14 . The preparation method of a compound semiconductor according to claim 11 ,
wherein the thermal treatment step is performed by means of solid-state reaction.

15 . The preparation method of a compound semiconductor according to claim 11 ,
wherein the pressure sintering step is performed by means of spark plasma sintering.

16 . A thermoelectric conversion device, which includes the compound semiconductor defined in claim 1 .

17 . The thermoelectric conversion device according to claim 16 , which includes the compound semiconductor defined in claim 1 as an N-type thermoelectric conversion material.

18 . A solar cell, which includes the compound semiconductor defined in claim 1 .

19 . A bulk-type thermoelectric material, which includes the compound semiconductor defined in claim 1 .

Assignees

• Lg Chemical Ltd

Inventors

• Choi Hyun-Woo
• Lim Byung-Kyu
• Kim Tae-Hoon
• Park Cheol-Hee
• You Eun-Ah
• Kwon O-Jong

Classifications

• C01P2006/40

  Electric properties · CPC title

• C01P2006/32

  Thermal properties · CPC title

• C01B19/007

  Tellurides or selenides of metals (C01B19/002 takes precedence) · CPC title

• H10F77/1215

  characterised by the dopants · CPC title

• H10F77/121

  comprising only selenium or only tellurium · CPC title