Semiconductor device and display device having semiconductor device

Patent metadata

Field	Value
Publication number	US-2016190331-A1
Application number	US-201514978470-A
Country	US
Kind code	A1
Filing date	Dec 22, 2015
Priority date	Dec 29, 2014
Publication date	Jun 30, 2016
Grant date	—

Abstract

Luminance variation due to change of current through a light-emitting element caused by change in environmental temperature is suppressed. Current through a first light-emitting element in a pixel portion is controlled by a monitor circuit. The monitor circuit includes a second light-emitting element, a transistor, a resistor, and an amplifier circuit. An anode of the second light-emitting element is connected to a source of the transistor. A cathode of the second light-emitting element is connected to the resistor and a first input terminal of the amplifier circuit. A second input terminal of the amplifier circuit is connected to a second power supply line. An output terminal of the amplifier circuit is connected to a gate of the transistor. The drain of the transistor is connected to a third power supply line. The transistor and the resistor each include an oxide semiconductor film.

First claim

1 . A semiconductor device comprising:
a pixel portion; and a monitor circuit provided outside the pixel portion, wherein the pixel portion comprises a first light-emitting element, wherein the monitor circuit comprises a second light-emitting element, a transistor, a resistor, and an amplifier circuit, wherein an anode of the second light-emitting element is electrically connected to one of a source and a drain of the transistor, wherein a cathode of the second light-emitting element is electrically connected to one electrode of the resistor and a first input terminal of the amplifier circuit, wherein the other electrode of the resistor is electrically connected to a first power supply line, wherein a second input terminal of the amplifier circuit is electrically connected to a second power supply line, wherein an output terminal of the amplifier circuit is electrically connected to a gate of the transistor, wherein the other of the source and the drain of the transistor is electrically connected to a third power supply line, wherein the transistor includes an oxide semiconductor film formed on a surface, wherein the resistor includes an oxide conductive film formed on the same surface as the oxide semiconductor film, and wherein an amount of current flowing through the first light-emitting element is controlled by the monitor circuit.

2 . The semiconductor device according to claim 1 , wherein the oxide semiconductor film contains In, Zn, and M (M is Ti, Ga, Y, Zr, La, Ce, Nd, Sn, or Hf).

3 . The semiconductor device according to claim 1 ,
wherein the oxide semiconductor film includes a crystal part, and wherein the crystal part has c-axis alignment.

4 . The semiconductor device according to claim 1 , wherein the oxide conductive film contains In, Zn, and M (M is Ti, Ga, Y, Zr, La, Ce, Nd, Sn, or Hf).

5 . A display device comprising:
the semiconductor device according to claim 1 ; and a color filter.

6 . A display module comprising:
the display device according to claim 5 ; and a touch sensor.

7 . A semiconductor device comprising:
a pixel portion; and a monitor circuit provided outside the pixel portion, wherein the pixel portion comprises a selection transistor, a driving transistor, and a first light-emitting element, wherein the selection transistor has a function of controlling conduction between a signal line and a gate of the driving transistor, wherein the driving transistor has a function of controlling an amount of current flowing through the first light-emitting element, wherein the monitor circuit comprises a second light-emitting element, a transistor, a resistor, and an amplifier circuit, wherein an anode of the second light-emitting element is electrically connected to one of a source and a drain of the transistor, wherein a cathode of the second light-emitting element is electrically connected to one electrode of the resistor and a first input terminal of the amplifier circuit, wherein the other electrode of the resistor is electrically connected to a first power supply line, wherein a second input terminal of the amplifier circuit is electrically connected to a second power supply line, wherein an output terminal of the amplifier circuit is electrically connected to a gate of the transistor, wherein the other of the source and the drain of the transistor is electrically connected to a third power supply line, wherein the transistor includes an oxide semiconductor film formed on a surface, wherein the resistor includes an oxide conductive film formed on the same surface as the oxide semiconductor film, and wherein the amount of current flowing through the driving transistor and the first light-emitting element is controlled by the monitor circuit.

8 . The semiconductor device according to claim 7 , wherein the selection transistor and the driving transistor each include the oxide semiconductor film.

9 . The semiconductor device according to claim 7 , wherein the oxide semiconductor film contains In, Zn, and M (M is Ti, Ga, Y, Zr, La, Ce, Nd, Sn, or Hf).

10 . The semiconductor device according to claim 7 ,
wherein the oxide semiconductor film includes a crystal part, and wherein the crystal part has c-axis alignment.

11 . The semiconductor device according to claim 7 , wherein the oxide conductive film contains In, Zn, and M (M is Ti, Ga, Y, Zr, La, Ce, Nd, Sn, or Hf).

12 . A display device comprising:
the semiconductor device according to claim 7 ; and a color filter.

13 . A display module comprising:
the display device according to claim 12 ; and a touch sensor.

14 . A semiconductor device comprising:
a pixel portion; and a monitor circuit provided outside the pixel portion, wherein the pixel portion comprises a selection transistor, a driving transistor, a first transistor, and a first light-emitting element, wherein the selection transistor has a function of controlling conduction between a signal line and a gate of the driving transistor, wherein the driving transistor and the first transistor each have a function of controlling an amount of current flowing through the first light-emitting element, wherein the monitor circuit comprises a second light-emitting element, a second transistor, a resistor, and an amplifier circuit, wherein an anode of the second light-emitting element is electrically connected to one of a source and a drain of the second transistor, wherein a cathode of the second light-emitting element is electrically connected to one electrode of the resistor and a first input terminal of the amplifier circuit, wherein the other electrode of the resistor is electrically connected to a first power supply line, wherein a second input terminal of the amplifier circuit is electrically connected to a second power supply line, wherein an output terminal of the amplifier circuit is electrically connected to a gate of the second transistor, wherein the other of the source and the drain of the second transistor is electrically connected to a third power supply line, wherein the second transistor includes an oxide semiconductor film formed on a surface, wherein the resistor includes an oxide conductive film formed on the same surface as the oxide semiconductor film, and wherein the amount of current flowing through the driving transistor and the first light-emitting element is controlled by the monitor circuit.

15 . The semiconductor device according to claim 14 , wherein the selection transistor, the driving transistor, and the first transistor each include the oxide semiconductor film.

16 . The semiconductor device according to claim 14 , wherein the oxide semiconductor film contains In, Zn, and M (M is Ti, Ga, Y, Zr, La, Ce, Nd, Sn, or Hf).

17 . The semiconductor device according to claim 14 ,
wherein the oxide semiconductor film includes a crystal part, and wherein the crystal part has c-axis alignment.

18 . The semiconductor device according to claim 14 , wherein the oxide conductive film contains In, Zn, and M (M is Ti, Ga, Y, Zr, La, Ce, Nd, Sn, or Hf).

19 . A display device comprising:
the semiconductor device according to claim 14 ; and a color filter.

20 . A display module comprising:
the display device according to claim 19 ; and a touch sensor.

21 . An electronic device comprising:
the semiconductor device according to claim 1 ; and an operation key or a battery.

Assignees

• Semiconductor Energy Lab

Inventors

• Miyake Hiroyuki
• Oikawa Yoshiaki
• Yamazaki Shunpei

Classifications

• G09G3/3233 Primary

  with pixel circuitry controlling the current through the light-emitting element · CPC title

• H10K59/131

  Interconnections, e.g. wiring lines or terminals · CPC title

• H10D30/6734

  having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs · CPC title

• H10D86/481

  integrated with passive devices, e.g. auxiliary capacitors · CPC title

• H10D86/423

  comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO · CPC title