X-ray image sensor substrate

Patent metadata

Field	Value
Publication number	US-2016190202-A1
Application number	US-201414907419-A
Country	US
Kind code	A1
Filing date	Aug 5, 2014
Priority date	Aug 7, 2013
Publication date	Jun 30, 2016
Grant date	—

Abstract

A thin film transistor substrate ( 2 ) includes: an auxiliary capacitor electrode ( 7 ); a gate insulating film ( 8 ) formed on an insulating substrate ( 4 ) to cover the auxiliary capacitor electrode ( 7 ); a drain electrode ( 11 ) formed on the gate insulating film ( 8 ) and an oxide semiconductor layer ( 9 ); a planarization film ( 13 ) formed on a passivation film ( 12 ); a capacitor electrode ( 14 ) formed on the planarization film ( 13 ); an interlayer insulating film ( 16 ) formed on the planarization film ( 13 ); and a pixel electrode ( 17 ) formed on the interlayer insulating film ( 16 ) and electrically connected to the drain electrode ( 11 ) via a contact hole ( 18 ).

First claim

1 . An X-ray image sensor substrate comprising:
an insulating substrate; a gate electrode and an auxiliary capacitor electrode formed on the insulating substrate; a gate insulating film formed on the insulating substrate to cover the gate electrode and the auxiliary capacitor electrode; a semiconductor layer formed on the gate insulating film to overlap with the gate electrode; a drain electrode formed on the gate insulating film and the semiconductor layer; a passivation film formed on the gate insulating film to cover the semiconductor layer and the drain electrode; a planarization film formed on the passivation film; a capacitor electrode formed on the planarization film; an interlayer insulating film formed on the planarization film to cover the capacitor electrode; and a pixel electrode formed on the interlayer insulating film and electrically connected to the drain electrode via a contact hole formed through the passivation film, the planarization film and the interlayer insulating film.

2 . The X-ray image sensor substrate of claim 1 , wherein
a dimple is formed in the planarization film, and the capacitor electrode is formed on the dimple.

3 : An X-ray image sensor substrate comprising:
an insulating substrate; a gate electrode and an auxiliary capacitor electrode formed on the insulating substrate; a gate insulating film formed on the insulating substrate to cover the gate electrode and the auxiliary capacitor electrode; a semiconductor layer formed on the gate insulating film to overlap with the gate electrode; a drain electrode formed on the gate insulating film and the semiconductor layer; a passivation film formed on the gate insulating film to cover the semiconductor layer and the drain electrode; and a capacitor electrode formed on the passivation film.

4 . An X-ray image sensor substrate comprising:
an insulating substrate; a gate electrode and an auxiliary capacitor electrode formed on the insulating substrate; a gate insulating film formed on the insulating substrate to cover the gate electrode and the auxiliary capacitor electrode; a semiconductor layer formed on the gate insulating film to overlap with the gate electrode; a drain electrode formed on the gate insulating film and the semiconductor layer; a passivation film formed on the gate insulating film to cover the semiconductor layer and the drain electrode; a capacitor electrode formed on the passivation film; an interlayer insulating film formed on the passivation film to cover the capacitor electrode; and a pixel electrode formed on the interlayer insulating film and electrically connected to the drain electrode via a contact hole formed through the passivation film and the interlayer insulating film.

5 . The X-ray image sensor substrate of claim 1 , wherein
the semiconductor layer is an oxide semiconductor layer.

Assignees

• Sharp Kk

Inventors

• Fujiwara Masaki
• Tanaka Kohhei

Classifications

• H10F39/80377

  characterised by the channel of the transistor, e.g. channel having a doping gradient · CPC title

• H10F39/8037

  the integrated elements comprising a transistor · CPC title

• H10F39/802

  Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes · CPC title

• H10F39/195

  X-ray, gamma-ray or corpuscular radiation imagers · CPC title

• H10F39/80

  Constructional details of image sensors · CPC title