Wire bonding method and apparatus for electromagnetic interference shielding
US-2024162162-A1 · May 16, 2024 · US
US2016189986A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016189986-A1 |
| Application number | US-201615061094-A |
| Country | US |
| Kind code | A1 |
| Filing date | Mar 4, 2016 |
| Priority date | Nov 7, 2013 |
| Publication date | Jun 30, 2016 |
| Grant date | — |
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A mold release film to be disposed on a cavity surface of a mold in a method for producing a semiconductor package wherein a semiconductor element is disposed in the mold and encapsulated with a curable resin to form a resin-encapsulation portion, characterized in that it has a first surface to be in contact with the curable resin at the time of forming the resin-encapsulation portion, and a second surface to be in contact with the cavity surface, at least one of the first surface and the second surface has irregularities formed thereon, and the surface having irregularities formed thereon, has an arithmetic mean roughness (Ra) of from 1.3 to 2.5 μm and a peak count (RPc) of from 80 to 200; and a process for producing a semiconductor package by using the mold release film.
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What is claimed is: 1 . A mold release film to be disposed on a cavity surface of a mold in a method for producing a semiconductor package wherein a semiconductor element is disposed in the mold and encapsulated with a curable resin to form a resin-encapsulation portion, characterized in that it has a first surface to be in contact with the curable resin at the time of forming the resin-encapsulation portion, and a second surface to be in contact with the cavity surface, at least one of the first surface and the second surface has irregularities formed thereon, and the surface having irregularities formed thereon, has an arithmetic mean roughness (Ra) of from 1.3 to 2.5 μm and a peak count (RPc) of from 80 to 200. 2 . The mold release film according to claim 1 , wherein the thickness of the mold release film is from 16 to 75 μm. 3 . The mold release film according to claim 1 , wherein the second surface has irregularities formed thereon, and the thickness of the mold release film is from 40 to 75 μm. 4 . The mold release film according to claim 1 , wherein the arithmetic mean roughness (Ra) is from 1.6 to 1.9 μm. 5 . The mold release film according to claim 1 , wherein the peak count (RPc) is from 100 to 130. 6 . The mold release film according to claim 1 , which is made of a fluororesin. 7 . The mold release film according to claim 6 , wherein the fluororesin is an ethylene/tetrafluoroethylene copolymer. 8 . The mold release film according to claim 7 , wherein the ethylene/tetrafluoroethylene copolymer comprises units based on tetrafluoroethylene, units based on ethylene, and units based on a third monomer other than tetrafluoroethylene and ethylene, and the molar ratio (TFE/E) of the units based on tetrafluoroethylene to the units based on ethylene in the ethylene/tetrafluoroethylene copolymer is from 80/20 to 40/60. 9 . The mold release film according to claim 8 , wherein the proportion of the units based on the third monomer is from 0.01 to 20 mol % to the total of all units in the ethylene/tetrafluoroethylene copolymer. 10 . The mold release film according to claim 9 , wherein the third monomer is (perfluorobutyl)ethylene, and the proportion of units based on the (perfluorobutyl)ethylene is from 0.5 to 4.0 mol % to the total of all units in the ethylene/tetrafluoroethylene copolymer. 11 . The mold release film according to claim 7 , wherein MFR as measured in accordance with ASTM D3159, of the ethylene/tetrafluoroethylene copolymer, is from 2 to 40 g/10 min. 12 . A process for producing a semiconductor package formed of a semiconductor element and a curable resin and having a resin-encapsulation portion for encapsulating the semiconductor element, which comprises a step of disposing the mold release film as defined in claim 1 and having the irregularities formed at least on the second surface, on a cavity surface of a mold to be in contact with the curable resin, so that the first surface faces the space in the cavity, a step of disposing a substrate having a semiconductor element mounted thereon, in the cavity, encapsulating the semiconductor element with the curable resin, and curing the curable resin in such a state that it is in contact with the mold release film, to form a resin-encapsulation portion, thereby to obtain an encapsulated product comprising the substrate, the semiconductor element mounted on the substrate and the resin-encapsulation portion for encapsulating the semiconductor element, and a step of releasing the encapsulated product from the mold. 13 . A process for producing a semiconductor package formed of a semiconductor element and a curable resin and having a resin-encapsulation portion for encapsulating the semiconductor element, and an ink layer formed on the surface of the resin-encapsulation portion, which comprises a step of disposing the mold release film as defined in claim 1 and having the irregularities at least on the first surface, on a cavity surface of a mold to be in contact with the curable resin, so that the first surface faces the space in the cavity, a step of disposing a substrate having a plurality of semiconductor elements mounted thereon, in the cavity, encapsulating the plurality of semiconductor elements collectively with the curable resin, and curing the curable resin in such a state that it is in contact with the mold release film, to form a resin-encapsulation portion, thereby to obtain a collectively encapsulated product comprising the substrate, the plurality of semiconductor elements mounted on the substrate and the resin-encapsulation portion for collectively encapsulating the plurality of semiconductor elements, a step of cutting the substrate and the resin-encapsulation portion of the collectively encapsulated product so that the plurality of semiconductor elements are separated, to obtain singulated encapsulated products each having a substrate, at least one semiconductor element mounted on the substrate, and a resin-encapsulation portion for encapsulating the semiconductor element, and a step of forming an ink layer by using an ink, on the surface which was in contact with the mold release film, of the resin-encapsulation portion of the collectively encapsulated product or the singulated encapsulated product.
Encapsulations, e.g. protective coatings · CPC title
Die-attach connectors and bond wires · CPC title
using moulds · CPC title
batch processes · CPC title
Auxiliary layers for moulds, e.g. release layers or layers preventing residue · CPC title
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