Electrode plate, manufacturing method thereof, and energy storage device

Patent metadata

Field	Value
Publication number	US-2016189880-A1
Application number	US-201514785772-A
Country	US
Kind code	A1
Filing date	May 29, 2015
Priority date	Dec 3, 2014
Publication date	Jun 30, 2016
Grant date	—

Abstract

An electrode plate, a manufacturing method thereof, and an energy storage device are disclosed. The method for manufacturing an electrode plate includes: forming a germanium film on a metal substrate; carrying out a topology treatment on the germanium film by using a functionalization element, to obtain the electrode plate with a topological semiconductor characteristic. The electrode plate prepared by the above method has a high conductivity and a low internal resistance.

First claim

1 . A method for manufacturing an electrode plate, comprising:
forming a germanium film on a metal substrate; carrying out a topology treatment on the germanium film by using a functionalization element, to obtain the electrode plate with a topological semiconductor characteristic.

2 . The method according to claim 1 , wherein,
the germanium film is formed by using an atomic layer deposition method; or the germanium film is formed by using a chemical vapor deposition method; or the germanium film is formed by using a mechanical exfoliation transferring method; or the germanium film is formed by using a magnetron sputtering method; or the germanium film is formed by using a pulsed laser deposition method.

3 . The method according to claim 1 , wherein the functionalization element comprises at least one selected from the group consisting of fluorine, chlorine, bromine, or iodine.

4 . The method according to claim 3 , wherein, carrying out topology treatment on the germanium film using the functionalization element to obtain the electrode plate with the topological semiconductor characteristic comprises:
carrying out halogenation treatment on the germanium film by using fluorine, chlorine, bromine, or iodine, to obtain a germanium halide film.

5 . The method according to claim 4 , wherein,
the halogenation treatment on the germanium film is carried out by using a gas phase method; or the halogenation treatment on the germanium film is carried out by using a liquid phase method; or the halogenation treatment on the germanium film is carried out by using a surface modification method; or the halogenation treatment on the germanium film is carried out by using a plasma treatment method.

6 . The method according to claim 5 , wherein, in the case where the halogenation treatment on the germanium film is carried out by using a liquid phase method, the halogenation treatment on the germanium film comprises:
carrying out the halogenation treatment on the germanium film in a liquid bromine environment with a concentration of the liquid bromine being 1%-10% and a treatment temperature being 40-80 Celsius degree, to form a germanium bromide film.

7 . The method according to claim 5 , wherein, in the case where the halogenation treatment on the germanium film is carried out by using a gas phase method, the halogenation treatment on the germanium film comprises:
carrying out the halogenation treatment on the germanium film under a iodine gas atmosphere with a gas pressure being 1-10 Pa and a treatment temperature being 60-100 Celsius degree, to form a germanium iodide film; or carrying out the halogenation treatment on the germanium film under a bromine gas atmosphere with the gas pressure being 1-10 Pa and the treatment temperature being 50-400 Celsius degree, to form a germanium bromide film; or carrying out annealing on the germanium film under a chlorine atmosphere at a treatment temperature of 50-400 Celsius degree for 10 minutes, to form a germanium chloride film.

8 . The method according to claim 5 , wherein, in the case where the halogenation treatment on the germanium film is carried out by using a gas phase method, the halogenation treatment on the germanium film comprises:
carrying out the halogenation treatment on the germanium film under a BCl 3 gas atmosphere with a gas pressure being 1-10 Pa and a treatment temperature being 250-350 Celsius degree, and carrying out annealing at 90-130 Celsius degree under halogen gas atmosphere, to form a germanium chloride film.

9 . The method according to claim 5 , wherein, in the case where the halogenation treatment on the germanium film is carried out by using a surface modification method, the halogenation treatment on the germanium film comprises:
coating an organic colloidal material comprising a halogen onto a substrate; laminating the substrate on the germanium film via a side of the substrate coated with the organic colloidal material, to make halogen atoms in the organic colloidal material transferred to the germanium film, to achieve the halogenation of the germanium film.

10 . The method according to claim 5 , wherein, in the case where the halogenation treatment on the germanium film is carried out by using a plasma treatment method, the halogenation treatment on the germanium film comprises:
bombing a surface of the germanium film by using a halogen plasma in a inductively coupled plasma or a reactive ion etching device, to make the halogen plasma adsorbed in the germanium film, to achieve the halogenation treatment on the germanium film.

11 . The method according to claim 1 , wherein the functionalization element comprises at least one selected from the group consisting of hydrogen, nitrogen, boron, and sulfur.

12 . The method according to claim 1 , further comprising, before forming the germanium film on the metal substrate, washing the metal substrate.

13 . An electrode plate, comprising a metal substrate and a film comprising germanium being disposed on the metal substrate and having a topological semiconductor characteristic.

14 . The electrode plate according to claim 13 , wherein the film comprises a germanium halide film formed by carrying out halogenation treatment on a germanium film with at least one selected from the group consisting of fluorine, chlorine, bromine, and iodine.

15 . The electrode plate according to claim 14 , wherein,
the germanium halide film is a single-atom-layer germanium halide film; or the germanium halide film is a double-atom-layer germanium halide film; or the germanium halide film is a multiple-atom-layer germanium halide film.

16 . The electrode plate according to claim 13 , wherein, the film comprises a topological semiconductor film formed by carrying out topology treatment on a germanium film with at least one selected from the group consisting of hydrogen, nitrogen, boron, and sulfur.

17 . The electrode plate according to claim 13 , wherein the metal substrate comprises at least one selected from the group consisting of a gold foil, an aluminum foil, a platinum foil, a copper foil, and a nickel foil.

18 . An energy storage device, comprising the electrode plate according to claim 13 .

19 . The energy storage device according to claim 18 , wherein the energy storage device comprises a battery or a capacitor.

20 . The energy storage device according to claim 18 , wherein the film comprises a germanium halide film formed by carrying out halogenation treatment on a germanium film with at least one selected from the group consisting of fluorine, chlorine, bromine, and iodine.

Assignees

• Boe Technology Group Co Ltd

Inventors

• Wang Long
• Li Yanzhao
• Qiao Yong
• Lu Yongchun

Classifications

• H01G11/24 Primary

  characterised by structural features of the materials making up or comprised in the electrodes, e.g. form, surface area or porosity; characterised by the structural features of powders or particles used therefor · CPC title

• H01M10/052

  Li-accumulators · CPC title

• H01M4/661

  Metal or alloys, e.g. alloy coatings (H01M4/669 take precedence) · CPC title

• H01M4/0404

  by coating on electrode collectors · CPC title

• H01M4/0423

  Physical vapour deposition · CPC title