Enhanced capacitance touch screen display and methods for use therewith
US-2024411406-A1 · Dec 12, 2024 · US
US2016187692A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016187692-A1 |
| Application number | US-201514925041-A |
| Country | US |
| Kind code | A1 |
| Filing date | Oct 28, 2015 |
| Priority date | Dec 31, 2014 |
| Publication date | Jun 30, 2016 |
| Grant date | — |
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Disclosed are an in-cell touch liquid crystal display (LCD) device having a pixel electrode top structure and a method of manufacturing the same. The in-cell touch LCD device includes a thin film transistor (TFT) disposed in each of a plurality of pixel areas, first to fourth passivation layers disposed on the TFT, a common electrode disposed on the second passivation layer, a conductive line disposed on the third passivation layer; a pixel electrode connected to a drain electrode of the TFT and disposed on the fourth passivation layer, and a bridge contact part configured to electrically connect the common electrode to the conductive line.
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What is claimed is: 1 . An in-cell touch liquid crystal display (LCD) device comprising: a thin film transistor (TFT) disposed in each of a plurality of pixel areas; a first passivation, a second passivation layer, a third passivation layer, and a fourth passivation layer disposed on the TFT; a common electrode disposed on the second passivation layer; a conductive line disposed on the third passivation layer; a pixel electrode connected to a drain electrode of the TFT and disposed on the fourth passivation layer; and a bridge contact part configured to electrically connect the common electrode to the conductive line. 2 . The in-cell touch LCD device of claim 1 , wherein the bridge contact part is connected to the common electrode through the third passivation layer and the fourth passivation layer. 3 . The in-cell touch LCD device of claim 1 , wherein the bridge contact part is connected to the conductive line through the fourth passivation layer. 4 . The in-cell touch LCD device of claim 3 , wherein the bridge contact part is disposed in a contact hole exposing the common electrode and is connected to the common electrode. 5 . The in-cell touch LCD device of claim 4 , wherein the bridge contact part is disposed in another contact hole exposing the conductive line and is connected to the conductive line. 6 . The in-cell touch LCD device of claim 5 , wherein the first passivation layer is disposed on the TFT, the second passivation layer is disposed over the first passivation layer, the third passivation layer is disposed over the second passivation layer and the fourth passivation layer is disposed over the third passivation layer. 7 . The in-cell touch LCD device of claim 6 , wherein the first to fourth passivation layers extend to an area next to the TFT where the conductive line and the common electrode are arranged. 8 . The in-cell touch LCD device of claim 7 , wherein the area next to the TFT is an area between the TFT and a further TFT of the in-cell touch LCD device. 9 . The in-cell touch LCD device of claim 1 , wherein the first passivation layer is formed on a data line connected to the TFT and wherein the first passivation layer is configured to insulate the data line. 10 . The in-cell touch LCD device of claim 1 , wherein the bridge contact part extends through the third passivation layer and the fourth passivation layer. 11 . The in-cell touch LCD device of claim 9 , wherein the conductive line is formed to overlap with a data line connected to the TFT. 12 . The in-cell touch LCD device of claim 1 , wherein the bridge contact part is insulated from the pixel electrode. 13 . A method of manufacturing an in-cell touch liquid crystal display (LCD) device, the method comprising: forming a thin film transistor (TFT) in each of a plurality of pixel areas; forming a source contact part, connected to a source electrode of the TFT, and a drain contact part connected to a drain electrode of the TFT; forming a first passivation layer and a second passivation layer on the source contact part and the drain contact part; forming a common electrode on the second passivation layer; forming a third passivation layer on the common electrode; forming a conductive line in an area, overlapping the common electrode, on the third passivation layer; forming a fourth passivation layer on the third passivation layer and the conductive line; forming a first contact hole, which exposes the drain contact part, and forming a pixel electrode in the first contact hole and on the fourth passivation layer; and forming a bridge contact part that connects the common electrode to the conductive line. 14 . The method of claim 13 , further comprising: forming a second contact hole by removing the third passivation layer and the fourth passivation layer disposed in an area overlapping the common electrode; and forming a third contact hole by removing the fourth passivation layer disposed in an area overlapping the conductive line. 15 . The method of claim 13 , wherein, the pixel electrode and the bridge contact part are formed in a manufacturing process using a same material and a same mask, the bridge contact part is formed in an island pattern, and the pixel electrode does not contact the bridge contact part.
Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes · CPC title
having light shields · CPC title
of multiple TFTs · CPC title
Input devices, e.g. touch panels · CPC title
in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)} · CPC title
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