Method for manufacturing antifogging porous silica thin film

US2016185658A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2016185658-A1
Application numberUS-201514878914-A
CountryUS
Kind codeA1
Filing dateOct 8, 2015
Priority dateDec 30, 2014
Publication dateJun 30, 2016
Grant date

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Abstract

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A method for manufacturing an antifogging porous silica thin film includes preparing a silicon block copolymer micelle solution, forming a coating layer by applying the solution on a substrate using a compressed air spraying method, forming a porous silica thin film by subjecting the coating layer to an oxygen plasma treatment, and solvent-annealing the porous silica thin film.

First claim

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What is claimed is: 1 . A method for manufacturing an antifogging porous silica thin film, the method comprising: preparing a silicon block copolymer micelle solution; forming a coating layer by applying the solution on a substrate using a compressed air spraying method; forming a porous silica thin film by subjecting the coating layer to an oxygen plasma treatment; and solvent-annealing the porous silica thin film. 2 . The method of claim 1 , wherein in the step of preparing a silicon block copolymer micelle solution, the silicon block copolymer micelle is selected from the group consisting of polystyrene-b-polydimethylsiloxane, polyacrylonitrile-b-polydimethylsiloxane, poly(4-vinylpyridine)-b-polydimethylsiloxane, polyethyleneoxide-b-polydimethylsiloxane, poly(2-vinylpyridine)-b-polydimethylsiloxane, polymethylmethacrylate-b-polydimethylsiloxane, polybutadiene-b-polydimethylsiloxane, polyisobutylene-b-polydimethylsiloxane, polydimethylsiloxane-b-polybutylacrylate, polydimethylsiloxane-b-polyacrylic acid, and mixtures thereof. 3 . The method of claim 2 , wherein at least one of a core part and a shell part of the silicon block copolymer micelle is composed of an inorganic polymer including silicon. 4 . The method of claim 2 , wherein the silicon block copolymer micelle includes 1 to 20% by weight of silicon. 5 . The method of claim 1 , wherein in the silicon block copolymer micelle solution, an average particle size of micelle is 10 nm to 20 nm. 6 . The method of claim 1 , wherein the substrate is a glass or transparent plastic. 7 . The method of claim 1 , wherein in the step of solvent-annealing, an annealing solvent is selected from the group consisting of toluene, heptane, tetrahydrofuran (THF), and mixtures thereof. 8 . The method of claim 1 , wherein in the step of solvent-annealing, an annealing time is 20 minutes to 2 hours. 9 . The method of claim 1 , wherein a thickness of the porous silica thin film is 10 to 200 nm. 10 . The method of claim 1 , wherein an average pore size of the porous silica thin film is 10 to 200 nm. 11 . The method of claim 1 , wherein porosity of the porous silica thin film is 30 to 90%. 12 . The method of claim 1 , wherein the porous silica thin film is a super-hydrophilic thin film having a contact angle of 0 to 10°. 13 . The method of claim 1 , wherein the step of preparing the silicon block copolymer micelle solution comprises mixing a silicon block copolymer with an organic solvent to form a mixture and heating the mixture at a temperature of 60° C. for 1 hour. 14 . The method of claim 6 , wherein the substrate is treated with UV or ozone so as to have a hydrophilic property.

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What does patent US2016185658A1 cover?
A method for manufacturing an antifogging porous silica thin film includes preparing a silicon block copolymer micelle solution, forming a coating layer by applying the solution on a substrate using a compressed air spraying method, forming a porous silica thin film by subjecting the coating layer to an oxygen plasma treatment, and solvent-annealing the porous silica thin film.
Who is the assignee on this patent?
Hyundai Motor Co Ltd, Korea Advanced Inst Sci & Tech
What technology area does this patent fall under?
Primary CPC classification C03C17/25. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Thu Jun 30 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).