Dielectric Pastes For Aluminum Substrates

Patent metadata

Field	Value
Publication number	US-2016185651-A1
Application number	US-201414911035-A
Country	US
Kind code	A1
Filing date	Oct 6, 2014
Priority date	Oct 28, 2013
Publication date	Jun 30, 2016
Grant date	—

Abstract

High thermal conductivity dielectric materials systems or pastes are useful on aluminum alloy substrates for LED and high power circuitry applications.

First claim

1 - 19 . (canceled)

20 : A dielectric composition comprising:
a. a glass component comprising
i. from about 30 to about 75 mol % SiO 2 ,
ii. from about 5 to about 25 mol % TiO 2 ,
iii. from about 5 to about 40 mol % (Li 2 O+Na 2 O+K 2 O+Rb 2 O+Cs 2 O), and
iv. from about 0.1 to about 15 mol % (P 2 O 5 +Nb 2 O 5 +V 2 O 5 ),
b. an organic vehicle, and c. a solvent.

21 : The dielectric composition of claim 20 , further comprising a thermal conductivity enhancer.

22 : The dielectric composition of claim 20 , wherein the thermal conductivity enhancer is selected from the group consisting of boron nitride, boron carbide, silicon carbide, silicon, aluminum nitride, metal bonded diamond powder, resin bonded diamond powder, polycrystalline diamond powder, and natural diamond powder.

23 : The dielectric composition of claim 20 , wherein the glass powder comprises:
a. from about 35 to about 70 mol % SiO 2 , b. from about 1 to about 15 mol % TiO 2 , c. from about 11 to about 37 mol % (Li 2 O+Na 2 O+K 2 O+Rb 2 O+Cs 2 O), and d. from about 1 to about 10 mol % (P 2 O 5 +Nb 2 O 5 +V 2 O 5 ),

24 : The dielectric composition of claim 23 , wherein the glass powder further comprises at least one selected from the group consisting of:
a. from about 0.1 to about 10 mol % Bi 2 O 3 , b. from about 0.1 to about 15 mol % B 2 O 3 , and c. from about 0.1 to about 12 mol % ZnO.

25 : The dielectric composition of claim 20 , comprising:
a. from about 42 to about 70 mol % SiO 2 , b. from about 5 to about 14 mol % TiO 2 , c. from about 15 to about 30 mol % (Li 2 O+Na 2 O+K 2 O+Rb 2 O+Cs 2 O), and d. from about 2 to about 8 mol % (P 2 O 5 +Nb 2 O 5 +V 2 O 5 ),

26 : The dielectric composition of claim 25 , wherein the glass powder further comprises at least one selected from the group consisting of:
a. from about 2 to about 8 mol % Bi 2 O 3 , b. from about 0.1 to about 5 mol % B 2 O 3 , and c. from about 0.1 to about 5 mol % ZnO.

27 : The dielectric composition of claim 20 , comprising:
a. from about 42 to about 60 mol % SiO 2 , b. from about 8 to about 14 mol % TiO 2 , c. from about 2 to about 7 mol % Li 2 O, d. from about 10 to about 15 mol % Na 2 O, e. from about 4 to about 7 mol % K 2 O, f. from about 0.1 to about 1 mol % P 2 O 5 , and g. from about 1 to about 7 mol % V 2 O 5 .

28 : The dielectric composition of claim 27 , wherein the glass powder further comprises at least one selected from the group consisting of:
a. from about 3 to about 7 mol % Bi 2 O 3 , b. from about 1 to about 4 mol % B 2 O 3 , c. from about 2 to about 4 mol % ZnO, and d. from about 0.1 to about 1 mol % Nb 2 O 5 .

29 : The dielectric composition of claim 20 , comprising:
a. from about 50 to about 68 mol % SiO 2 , b. from about 9 to about 13 mol % TiO 2 , c. from about 2 to about 7 mol % Li 2 O, d. from about 9 to about 15 mol % Na 2 O, e. from about 4 to about 8 mol % K 2 O, f. from about 0.2 to about 1.1 mol % P 2 O 5 , and g. from about 1.5 to about 7 mol % V 2 O 5 .

30 : The dielectric composition of claim 29 , wherein the glass powder further comprises at least one selected from the group consisting of:
a. from about 2 to about 8 mol % Bi 2 O 3 , b. from about 1 to about 3 mol % B 2 O 3 , c. from about 1 to about 4 mol % ZnO, and d. from about 0.1 to about 1.5 mol % Nb 2 O 5 .

31 : The dielectric composition of claim 20 , wherein the glass component includes glass frit particles having a D 50 particle size of 0.1-10 microns and a D 95 particle size of 0.1-15 microns.

32 : An electronic device comprising:
a. an aluminum substrate, b. at least one layer of the dielectric composition of claim 20 disposed on at least a portion of the aluminum substrate, c. a conductive trace, and d. a power circuit,
wherein the substrate, dielectric composition and conductive trace are arranged so that the dielectric composition at least one of (i) electrically separates and (ii) physically separates the aluminum substrate and conductive trace and wherein the power circuit contacts only the conductive trace.

33 : The electronic device of claim 32 , wherein the aluminum substrate comprises a material selected from the group consisting of AL 1050, AL 1060, AL 1100, AL 2024, AL 3003, AL 380, AL 384, AL 5052, AL 514, AL 6061, and AL 6063.

34 : The electronic device of claim 32 , wherein the conductive trace includes at least one metal selected from the group consisting of copper, aluminum, silver, platinum and palladium.

35 : An electronic device comprising:
a. an aluminum substrate, b. at least one layer of the dielectric composition of claim 29 disposed on at least a portion of the aluminum substrate, c. a conductive trace, and d. a power circuit,
wherein the substrate, dielectric composition and conductive trace are arranged so that the dielectric composition at least one of (i) electrically separates and (ii) physically separates the aluminum substrate and conductive trace and wherein the power circuit contacts only the conductive trace.

36 : A method of forming a dielectric layer upon an aluminum substrate comprising:
a. applying at least one layer of the dielectric composition of claim 20 upon an aluminum substrate, and b. firing said dielectric composition to form a dielectric layer upon the substrate.

37 : The method of claim 36 , wherein firing is conducted at a temperature of from about 400° C. to about 660° C.

38 : A method of producing an electronic device comprising
a. applying to an aluminum substrate at least one layer of the dielectric composition of claim 20 , b. applying at least one layer of a conductive paste to the at least one layer of dielectric composition, to form an assembly, c. firing the assembly at 400-660° C. to sinter the dielectrics and conductive paste, and d. positioning a power circuit in electrical contact with the at least one layer of conductive paste.

39 : An electronic device comprising at least one layer of the dielectric composition of claim 20 , the electronic device selected from the group consisting of vacuum insulated glass, solar cell contact, solar cell, solar cell module, organic PV device, plasma display device, nanocrystal display, electrochromic device, electrochromic material system, sensors, suspended particle device, micro-blind, liquid crystal device, smart window, switchable window, smart glass, e-glass, quantum dot devices, thermoelectric devices, batteries, light emitting diodes, surface-conduction electron-emitter displays, field emission displays, organic light emitting diodes, liquid crystal displays, digital light processing, ferro-liquid displays, interferometric modulator displays, thick-film dielectric electroluminescent displays, quantum dot electroluminescent displays, time multiplexed optical shutters, telescopic pixel displays, liquid crystal lasers, laser phosphor displays, organic light-emitting transistors, and combinations thereof.

Assignees

• Ferro Corp

Inventors

• Sridharan Srinivasan
• Brown Orville W
• Graddy Jr George E

Classifications

• C03C3/097

  containing phosphorus, niobium or tantalum · CPC title

• C03C8/08

  containing phosphorus · CPC title

• C03C8/14

  Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions · CPC title

• C09K5/14

  Solid materials, e.g. powdery or granular · CPC title

• H01B3/087

  Chemical composition of glass · CPC title