Optical semiconductor element, optical module, and method for manufacturing optical semiconductor element
US-2024388064-A1 · Nov 21, 2024 · US
Semiconductor light device and manufacturing method for the same
US2016181761A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016181761-A1 |
| Application number | US-201615059304-A |
| Country | US |
| Kind code | A1 |
| Filing date | Mar 3, 2016 |
| Priority date | Apr 5, 2011 |
| Publication date | Jun 23, 2016 |
| Grant date | — |
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- Title
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Abstract
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Provided is a semiconductor light device comprising a semiconductor substrate having a first conduction type; a first cladding layer having the first conduction type deposited above the semiconductor substrate; an active layer; a second cladding layer having a second conduction type; and a contact layer. The active layer includes a window portion that is disordered via diffusion of vacancies and a non-window portion having less disordering than the window portion, and the contact layer includes a first region and a second region that is below the first region and has greater affinity for hydrogen than the first region.
First claim
Opening claim text (preview).
What is claimed is: 1 . A semiconductor laser device, comprising: a semiconductor substrate having a first conduction type; a first cladding layer having the first conduction type and deposited above the semiconductor substrate; an active layer deposited above the first cladding layer; a second cladding layer having a second conduction type and deposited above the active layer; and a contact layer deposited on the second cladding layer, wherein the active layer includes a window portion that is disordered via diffusion of vacancies, and a non-window portion having less disordering than the window portion, the contact layer has a first hydrogen concentration in a region corresponding to the non-window portion, and a second hydrogen concentration in a region corresponding to the window portion, the first hydrogen concentration is higher than the second hydrogen concentration, and the first hydrogen concentration in the region corresponding to the non-window portion is greater than 8.0E+16 atoms/cm 3 . 2 . The semiconductor laser device according to claim 1 , wherein the contact layer includes a p-type GaAs layer doped with a p-type dopant. 3 . The semiconductor laser device according to claim 2 , wherein the p-type dopant includes Zn, Mg, Be or carbon. 4 . The semiconductor laser device according to claim 2 , wherein the total doping amount of the p-type dopant in the contact layer is no greater than 1.0E+15 atoms/cm 2 .
Assignees
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Classifications
with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs · CPC title
using Mg · CPC title
characterised by the dopants · CPC title
Manufacture or treatment · CPC title
Nanooptics, e.g. quantum optics or photonic crystals · CPC title
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- What does patent US2016181761A1 cover?
- Provided is a semiconductor light device comprising a semiconductor substrate having a first conduction type; a first cladding layer having the first conduction type deposited above the semiconductor substrate; an active layer; a second cladding layer having a second conduction type; and a contact layer. The active layer includes a window portion that is disordered via diffusion of vacancies an…
- Who is the assignee on this patent?
- Furukawa Electric Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H01S5/0421. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Jun 23 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).