Diode and method of making the same
US-2024355937-A1 · Oct 24, 2024 · US
US2016181237A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016181237-A1 |
| Application number | US-201615055613-A |
| Country | US |
| Kind code | A1 |
| Filing date | Feb 28, 2016 |
| Priority date | Apr 28, 2012 |
| Publication date | Jun 23, 2016 |
| Grant date | — |
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An electrostatic discharge protection structure includes: substrate of a first type of conductivity, well region of a second type of conductivity, substrate contact region in the substrate and of the first type of conductivity, well contact region in the well region and of the second type of conductivity, substrate counter-doped region between the substrate contact region and the well contact region and of the second type of conductivity, well counter-doped region between the substrate contact region and the well contact region and of the first type of conductivity, communication region at a lateral junction between the substrate and the well region, first isolation region between the substrate counter-doped region and the communication region, second isolation region between the well counter-doped region and the communication region, oxide layer having one end on the first isolation region and another end on the substrate, and field plate structure on the oxide layer.
Opening claim text (preview).
What is claimed is: 1 . A method of fabrication of an electrostatic discharge protection structure, the method comprising: providing a substrate of a first type of electrical conductivity; forming a first isolation region and a second isolation region in the substrate; forming a well region of a second type of electrical conductivity in the substrate by ion implantation, the first isolation region located in the substrate, the second isolation region located in the well regi…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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