Electrostatic Discharge Protection Structure And Fabrication Method Thereof

US2016181237A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2016181237-A1
Application numberUS-201615055613-A
CountryUS
Kind codeA1
Filing dateFeb 28, 2016
Priority dateApr 28, 2012
Publication dateJun 23, 2016
Grant date

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Abstract

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An electrostatic discharge protection structure includes: substrate of a first type of conductivity, well region of a second type of conductivity, substrate contact region in the substrate and of the first type of conductivity, well contact region in the well region and of the second type of conductivity, substrate counter-doped region between the substrate contact region and the well contact region and of the second type of conductivity, well counter-doped region between the substrate contact region and the well contact region and of the first type of conductivity, communication region at a lateral junction between the substrate and the well region, first isolation region between the substrate counter-doped region and the communication region, second isolation region between the well counter-doped region and the communication region, oxide layer having one end on the first isolation region and another end on the substrate, and field plate structure on the oxide layer.

First claim

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What is claimed is: 1 . A method of fabrication of an electrostatic discharge protection structure, the method comprising: providing a substrate of a first type of electrical conductivity; forming a first isolation region and a second isolation region in the substrate; forming a well region of a second type of electrical conductivity in the substrate by ion implantation, the first isolation region located in the substrate, the second isolation region located in the well regi…

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What does patent US2016181237A1 cover?
An electrostatic discharge protection structure includes: substrate of a first type of conductivity, well region of a second type of conductivity, substrate contact region in the substrate and of the first type of conductivity, well contact region in the well region and of the second type of conductivity, substrate counter-doped region between the substrate contact region and the well contact r…
Who is the assignee on this patent?
Csmc Technologies Fab1 Co Ltd
What technology area does this patent fall under?
Primary CPC classification H10D8/041. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Jun 23 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).