Chemically-Sensitive Field Effect Transistor

Patent metadata

Field	Value
Publication number	US-2016178569-A1
Application number	US-201514963253-A
Country	US
Kind code	A1
Filing date	Dec 9, 2015
Priority date	Dec 18, 2014
Publication date	Jun 23, 2016
Grant date	—

Abstract

A chemically-sensitive field effect transistor is disclosed herein. The chemically-sensitive field effect transistor comprises a CMOS structure comprising a conductive source and a conductive drain, a channel and an analyte-sensitive dielectric layer. The channel extends from the conductive source to the conductive drain. The channel is composed of a one-dimensional transistor material or a two-dimensional transistor material. The analyte-sensitive dielectric layer is disposed over the channel. An I-V curve or an I-V g curve is shifted in response to a chemical reaction occurring on or near the chemically-sensitive field effect transistor.

First claim

We claim as our invention the following:

1 . A chemically-sensitive field effect transistor comprising:
an integrated circuit structure comprising a conductive source and a conductive drain; a channel extending from the conductive source to the conductive drain, the channel composed of a one-dimensional transistor material or a two-dimensional transistor material; an oxide layer disposed over the channel; wherein an I-V curve or an I-Vg curve is shifted in response to a chemical reaction occurring over or near the chemically-sensitive field effect transistor.

2 . The chemically-sensitive field effect transistor according to claim 1 wherein the conductive source and the conductive drain are each composed of a copper material, damascene copper, an aluminum material, a platinum material or a gold material.

3 . The chemically-sensitive field effect transistor according to claim 1 wherein the conductive source and the conductive drain are embedded in an insulator and planar with a top surface of the insulator.

4 . The chemically-sensitive field effect transistor according to claim 1 wherein a length of the channel from the source to the drain ranges from 0.05 micron to 3 microns, and a width of the channel ranges from 0.05 micron to 2 microns.

5 . The chemically-sensitive field effect transistor according to claim 1 wherein the channel is comprised of a two-dimensional transistor material selected from the group consisting of graphene, molybdenum disulfide and metal dichalcogenides.

6 . The chemically-sensitive field effect transistor according to claim 1 further comprising a well structure positioned on a portion of an exterior surface of the oxide layer, wherein the well structure defines an opening allowing for direct contact with the oxide layer.

7 . The chemically-sensitive field effect transistor according to claim 6 wherein the well structure is composed of a polyimide, BCB, silicon oxide, a silicon nitride, a silicon oxynitride or a silicon carbide.

8 . The chemically-sensitive field effect transistor according to claim 1 wherein the chemically-sensitive field effect transistor is configured for biological material detection.

9 . The chemically-sensitive field effect transistor according to claim 8 wherein the biological material is a nucleic acid, other biological molecule, or protein.

10 . The chemically-sensitive field effect transistor according to claim 1 wherein the channel has a thickness of 50 nanometers or less.

11 . The chemically-sensitive field effect transistor according to claim 1 wherein the channel is composed of a one-dimensional transistor material composed of a carbon nanotube or a semiconductor nanowire.

12 . The chemically-sensitive field effect transistor according to claim 1 wherein the oxide layer is comprised of an aluminum oxide, a silicon dioxide, a hafnium dioxide, hafnium silicate, zirconium silicate, zirconium dioxide, lanthanum oxide, tantalum oxide, titanium oxide, iron oxide, or yttrium oxide.

13 . The chemically-sensitive field effect transistor according to claim 1 wherein the oxide layer is comprised of an ion sensitive material with a high intrinsic buffer capacity.

14 . The chemically-sensitive field effect transistor according to claim 1 wherein the oxide layer is comprised of two or more oxide layers.

15 . A chemically-sensitive field effect transistor comprising:
an integrated circuit structure comprising a conductive source and a conductive drain; and a channel extending from the conductive source to the conductive drain, the channel composed of a one-dimensional transistor material or a two-dimensional transistor material; wherein an I-V curve or an I-Vg curve is shifted in response to a chemical reaction occurring on the chemically-sensitive field effect transistor.

16 . The chemically-sensitive field effect transistor according to claim 15 wherein the conductive source and the conductive drain are each composed of a copper material, damascene copper, an aluminum material, a platinum material or a gold material.

17 . The chemically-sensitive field effect transistor according to claim 15 wherein a length of the channel from the source to the drain ranges from 0.05 micron to 3 microns, and a width of the channel ranges from 0.05 micron to 2 microns.

18 . The chemically-sensitive field effect transistor according to claim 15 wherein the channel is composed of a material selected from the group consisting of graphene, molybdenum disulfide, black phosphorous, carbon nanotube, a semiconductor nanowire and metal dichalcogenides.

19 . The chemically-sensitive field effect transistor according to claim 15 further comprising a well structure positioned on a portion of an exterior surface of the channel, wherein the well structure defines an opening allowing for direct contact with the channel.

20 . The chemically-sensitive field effect transistor according to claim 19 wherein the material for the well structure is comprised of a polyimide, BCB, silicon oxide, a silicon nitride, a silicon oxynitride or a silicon carbide.

21 . A bio-sensor comprising:
a CMOS structure comprising a copper source and a copper drain; a graphene channel extending from the source to the drain; an analyte-sensitive dielectric layer disposed over the graphene channel and having a thickness of 50 nanometers or less; and a well structure positioned over a portion of an exterior surface of the analyte-sensitive dielectric layer, wherein the well structure defines an opening allowing for direct contact with the analyte-sensitive dielectric layer; wherein an I-V or I-Vg curve is shifted in response to detection of a biological compound.

22 . The bio-sensor according to claim 21 wherein the analyte-sensitive dielectric layer is comprised of two or more analyte-sensitive dielectric layers.

23 . The bio-sensor according to claim 21 wherein the analyte-sensitive dielectric layer is comprised of an aluminum oxide, a silicon dioxide, a hafnium dioxide, hafnium silicate, zirconium silicate, zirconium dioxide, lanthanum oxide, tantalum oxide, titanium oxide, iron oxide, or yttrium oxide.

24 . The bio-sensor according to claim 21 wherein the analyte-sensitive dielectric layer is comprised of an ion sensitive material with a high intrinsic buffer capacity.

25 . The bio-sensor according to claim 21 wherein a length of the channel from the source to the drain ranges from 0.05 micron to 3 microns, and a width of the channel ranges from 0.05 micron to 2 microns.

26 . The bio-sensor according to claim 21 wherein the material for the well structure is comprised of a polyimide, BCB, silicon oxide, a silicon nitride, a silicon oxynitride or a silicon carbide.

27 . A graphene field effect transistor comprising:
a CMOS structure comprising a copper source and a copper drain; a graphene channel extending from the source to the drain; an analyte-sensitive dielectric layer disposed over the graphene channel and having a thickness of 50 nanometers or less; and a well structure positioned over a portion of an exterior surface of the oxide layer, wherein the well structure defines an opening allowing for direct contact with the analyte-sensitive dielectric layer; wherein an I-V or I-Vg curve is shifted in response to a chemical reaction occurring on the graphene field effect transistor.

Assignees

• Edico Genome Corp

Inventors

• Hoffman Paul
• Lerner Mitchell
• Van Rooyen Pieter

Classifications

• G01N27/4148 Primary

  Integrated circuits therefor, e.g. fabricated by CMOS processing · CPC title

• G01N27/4145

  specially adapted for biomolecules, e.g. gate electrode with immobilised receptors · CPC title

• G01N27/4146

  involving nanosized elements, e.g. nanotubes, nanowires · CPC title

• H10D62/881

  being a two-dimensional material · CPC title

• H10D30/481

  FETs having two-dimensional material channels, e.g. transition metal dichalcogenide [TMD] FETs · CPC title