Substrate including silica

Patent metadata

Field	Value
Publication number	US-2016176756-A1
Application number	US-201615057601-A
Country	US
Kind code	A1
Filing date	Mar 1, 2016
Priority date	Nov 12, 2014
Publication date	Jun 23, 2016
Grant date	—

Abstract

An assembly, such as for growing carbon nanotubes, includes a substrate including SiO2 and has a thickness of less than 500 μm. Further, the substrate is bendable and has a surface with non-flat or non-polished texture such that surface comprises raised and recessed features for receiving a coating, such as a catalyst. Carbon nanotubes may be anchored to and grow from the recessed features of the substrate.

First claim

What is claimed is:

1 . A substrate formed from a glass material of (SiO 2 ) 1-x-y .M′ x M″ y composition, where either or both of M′ and M″ is an element, dopant, or substitution, which may be in an oxide form, or combination thereof, or is omitted, and where the sum of x plus y is less than 1;
wherein the glass material has a high softening point temperature, that being greater than 800° C.;
wherein the substrate is arranged as a thin sheet having a thickness of less than 500 μm;
wherein the substrate has a minimum dimension orthogonal to the thickness that is less than 100 m and greater than 1 mm;
wherein the substrate may bend to a radius of curvature of at least 500 mm without fracture when at room temperature of 25° C.; and
wherein the substrate has a surface that comprises raised and recessed features, wherein at least some of the raised features extend from the surface a distance of at least 10 angstroms further than the recessed features, wherein the raised and recessed features are formed in the glass material of the substrate.

2 . The substrate of claim 1 , wherein the substrate has a non-circular periphery orthogonal to the thickness thereof.

3 . The substrate of claim 2 , wherein the non-circular periphery is rectilinear.

4 . The substrate of claim 1 , wherein the surface comprises intersecting elongate features, the elongate features having a length at least ten times a width thereof, wherein at least some of the elongate features have a width that is greater than 2 μm and less than 10 mm; and wherein texture of the surface is at least in part formed by the intersecting elongate features, wherein at least some of the raised features of the surface extend outward from the surface a distance of at least 2 μm greater than at least some of the recessed features of the surface.

5 . The substrate of claim 1 , wherein the glass material of the substrate has a high softening point temperature, that being greater than 1000° C.

6 . The substrate of claim 5 , wherein the glass material has a particularly low coefficient of thermal expansion, that being less than 10×10 −7 /° C. in the temperature range of about 50 to 300° C.

7 . The substrate of claim 1 , wherein the glass material of the substrate consists of at least 99.5% SiO 2 by weight.

8 . The substrate of claim 1 , wherein the substrate has a thickness of less than 250 μm.

9 . A substrate, comprising:
SiO 2 material; wherein the substrate is arranged as a thin sheet having a thickness between 50 μm and 1 mm; wherein the substrate has a minimum dimension orthogonal to the thickness that is less than 100 m and greater than 1 mm; wherein the substrate may bend to a radius of curvature of at least 500 mm without fracture when at room temperature of 25° C.; wherein the surface comprises intersecting elongate features, the elongate features having a length at least ten times a width thereof, wherein at least some of the elongate features have a width that is greater than 2 μm and less than 10 mm; and wherein texture of the surface comprises raised and recessed features at least in part formed by the intersecting elongate features, wherein at least some of the raised features of the surface extend outward from the surface a distance of at least 2 μm greater than at least some of the recessed features of the surface, wherein the raised and recessed features are formed in the SiO 2 material of the substrate.

10 . The substrate of claim 9 , wherein the substrate has a non-circular periphery orthogonal to the thickness thereof.

11 . The substrate of claim 10 , wherein the non-circular periphery is rectilinear.

12 . The substrate of claim 9 , wherein the substrate has a high softening point temperature, that being greater than 800° C.

13 . The substrate of claim 12 , wherein the substrate has a particularly low coefficient of thermal expansion, that being less than 10×10 −7 /° C. in the temperature range of about 50 to 300° C.

14 . The substrate of claim 9 , wherein the substrate consists of a glass at least 99.5% SiO 2 by weight.

15 . The substrate of claim 9 , wherein the substrate has a thickness of less than 250 μm.

16 . A fused silica substrate having a softening point temperature greater than 800° C.;
wherein the fused silica substrate is arranged as a thin sheet having a thickness of less than 500 μm;
wherein the fused silica substrate has a minimum dimension orthogonal to the thickness that is less than 100 m and greater than 1 mm;
wherein the fused silica substrate may bend to a radius of curvature of at least 500 mm without fracture when at room temperature of 25° C.; and
wherein the substrate has a surface that comprises raised and recessed features, wherein at least some of the raised features extend from the surface a distance of at least 10 angstroms further than the recessed features, wherein the raised and recessed features are formed in the fused silica of the substrate.

17 . The fused silica substrate of claim 16 , wherein the fused silica substrate has a softening point temperature, that being greater than 1000° C., and wherein the fused silica substrate has a coefficient of thermal expansion less than 10×10 −7 /° C. in the temperature range of about 50 to 300° C.

18 . The fused silica substrate of claim 17 , wherein the substrate has a density greater than 1.0 g/cm 3 .

19 . The fused silica substrate of claim 18 , wherein the substrate consists of at least 99.5% SiO 2 by weight.

20 . The fused silica substrate of claim 19 , wherein the substrate allows transmittance of ultraviolet, visible, and/or near infrared light that is greater than 90%.

21 . A fused silica substrate having a softening point temperature greater than 800° C.;
wherein the fused silica substrate is arranged as a thin sheet having a thickness of between 50 μm and 1 mm;
wherein the fused silica substrate has a minimum dimension orthogonal to the thickness that is less than 100 m and greater than 1 mm;
wherein the fused silica substrate has a non-circular periphery orthogonal to the thickness thereof; and
wherein the fused silica substrate has a surface that comprises raised and recessed features, wherein at least some of the raised features extend from the surface a distance of at least 10 angstroms further than the recessed features, and wherein the raised and recessed features are formed in the fused silica of the substrate.

22 . The fused silica substrate of claim 21 , wherein the non-circular periphery is rectilinear.

23 . The fused silica substrate of claim 21 , wherein the non-circular periphery is rectangular.

24 . The fused silica substrate of claim 21 , wherein the surface comprises intersecting elongate features.

25 . The fused silica substrate of claim 24 , wherein the elongate features having a length at least ten times a width thereof.

26 . The fused silica substrate of claim 25 , wherein at least some of the elongate features have a width that is greater than 2 μm and less than 10 mm.

27 . The fused silica substrate of claim 26 , wherein texture of the surface is at least in part formed by the intersecting elongate features, and wherein at least some of the raised features of the surface extend outward from the surface a distance of at least 2 μm greater than at least some of the recessed features of the surface.

Assignees

• Corning Inc

Inventors

• Lal Archit
• Thomas Iii Windsor Pipes

Classifications

• B01J35/32

  Bulk density · CPC title

• C01B33/12

  Silica; Hydrates thereof, e.g. lepidoic silicic acid · CPC title

• C03C23/0095

  Solution impregnating; Solution doping; Molecular stuffing, e.g. of porous glass (in manufacture of preforms C03B37/012) · CPC title

• C01B31/0226

  Chemistry & Metallurgy · mapped topic

• C03C23/0025 Primary

  by a laser beam · CPC title