Power module

Patent metadata

Field	Value
Publication number	US-2016172285-A1
Application number	US-201514965909-A
Country	US
Kind code	A1
Filing date	Dec 11, 2015
Priority date	Dec 15, 2014
Publication date	Jun 16, 2016
Grant date	—

Abstract

A power module includes a first substrate, at least two power elements, at least one first conductive structure and at least one leadframe. The first substrate includes a dielectric frame, two first fan-out circuit structure layers and two dielectric plates. The two first fan-out circuit structure layers are respectively disposed on two opposite surfaces of the dielectric frame, the two dielectric plates are respectively disposed on the two first fan-out circuit structure layers, each of the dielectric plates has at least one opening, and the opening and the corresponding first fan-out circuit structure layer form a concavity. The two power elements are respectively embedded in the two concavities. The two power elements are electrically connected to each other through the first conductive structure. The leadframe disposed at the first substrate is electrically connected to the two power elements, and is partially extended outside the first substrate.

First claim

What is claimed is:

1 . A power module, comprising:
a first substrate, comprising at least one dielectric frame, two first fan-out circuit structure layers, wherein the at least one dielectric frame has two opposite surfaces, the two first fan-out circuit structure layers are respectively disposed on the two surfaces; two dielectric plates, the two dielectric plates are respectively disposed on the two first fan-out circuit structure layers, each of the dielectric plates has at least one opening, and the at least one opening and the corresponding first fan-out circuit structure layer form at least one concavity; at least two power elements, respectively disposed on the two first fan-out circuit structure layers, wherein the at least two power elements are respectively embedded in each of the at least one concavity of the two dielectric plates; at least one first conductive structure, wherein the at least two power elements are electrically connected to each other through the at least one first conductive structure; and at least one leadframe, disposed at the first substrate and electrically connected to the at least two power elements, and partially extended outside of the first substrate.

2 . The power module as recited in claim 1 , wherein each of the fan-out circuit structure layers is in contact with the at least one leadframe.

3 . The power module as recited in claim 1 , wherein the concavities are symmetrically formed at two opposite sides of the dielectric frame.

4 . The power module as recited in claim 1 , wherein the at least one first conductive structure is disposed in the dielectric frame and located between the two first fan-out circuit structure layers.

5 . The power module as recited in claim 1 , wherein the at least one first conductive structure is a conductive via or a metal conductive member.

6 . The power module as recited in claim 1 , wherein each of the at least two power elements is electrically connected to the corresponding fan-out circuit structure layer.

7 . The power module as recited in claim 1 , wherein each of the first substrates and dielectric plate comprises a second fan-out circuit structure layer, the first fan-out circuit structure layer and the second fan-out circuit structure layer are respectively disposed on opposite sides of the dielectric plate, and the fan-out circuit structure layer is in contact with the at least one leadframe.

8 . The power module as recited in claim 7 , wherein each of the at least two power elements is electrically connected to the corresponding fan-out circuit structure layer.

9 . The power module as recited in claim 1 , comprising two heat dissipation devices, wherein the two heat dissipation devices are respectively disposed at two opposite sides of the first substrate.

10 . The power module as recited in claim 9 , comprising two second substrates, wherein one of the second substrates is disposed between the first substrate and one of the heat dissipation devices, the other one of the second substrates is disposed between the first substrate and the other one of the heat dissipation devices.

11 . The power module as recited in claim 10 , wherein each of the second substrates includes a dielectric layer directly connected on the heat dissipation devices.

12 . The power module as recited in claim 10 , wherein each of the heat dissipation devices comprises a thermal spreading structure and a heat dissipation structure, and the thermal spreading structure is disposed between the heat dissipation structure and the second substrates.

13 . The power module as recited in claim 12 , wherein each of the second substrates includes a dielectric layer directly formed on a surface of the thermal spreading structure of the heat dissipation device.

14 . The power module as recited in claim 12 , wherein each of the thermal spreading structure is a vacuum chamber with porous capillary structure and comprises a first region and a second region, the first region has a plurality of first pores communicated with each other, the second region has a plurality of second pores communicated with each other, and an porosity of each of the first pores is not equal to an porosity of each of the second pores.

15 . The power module as recited in claim 1 , wherein each of the at least two power elements is an insulated gate bipolar transistor (IGBT), a metal-oxide-semiconductor field effect transistor (MOSFET) or a diode.

16 . The power module as recited in claim 1 , wherein the at least two power elements are in parallel electrically connected with each other through the two first fan-out circuit structure layers.

17 . The power module as recited in claim 1 , wherein the at least two power elements are in series electrically connected with each other through the two first fan-out circuit structure layers.

18 . The power module as recited in claim 1 , wherein each of the dielectric plates has at least one through hole, and a second conductive structure is disposed in the through hole.

19 . The power module as recited in claim 18 , wherein the second conductive structure is a conductive via or a metal conductive member.

20 . The power module as recited in claim 1 , wherein the at least one dielectric frame comprises two dielectric frames, the two dielectric frames are bonded to each other, the two first fan-out circuit structure layers are respectively disposed on the two dielectric frames.

Assignees

• Ind Tech Res Inst

Inventors

• Yang Shu-Jung
• Chao Yu-Lin
• Chien Heng-Chieh
• Liu Chun-Kai

Classifications

• H10W72/9413

  on encapsulations · CPC title

• H10W72/944

  Dispositions of multiple bond pads · CPC title

• H10W70/682

  comprising holes having chips therein · CPC title

• H10W90/701

  characterised by the relative positions of pads or connectors relative to package parts · CPC title

• H10W90/401

  characterised by multiple insulating or insulated package substrates, interposers or RDLs · CPC title