Optimized back plate used in acoustic devices
US-2015296305-A1 · Oct 15, 2015 · US
US2016167945A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016167945-A1 |
| Application number | US-201414570282-A |
| Country | US |
| Kind code | A1 |
| Filing date | Dec 15, 2014 |
| Priority date | Dec 15, 2014 |
| Publication date | Jun 16, 2016 |
| Grant date | — |
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A microelectromechanical systems (MEMS) structure having a stopper integrated with a MEMS substrate is provided. A first substrate has a dielectric layer arranged over the first substrate. The dielectric layer includes a device opening. A second substrate is arranged over and bonded to the first substrate through the dielectric layer. The second substrate includes a deflectable element arranged over the device opening. A stopper is integrated with the second substrate and protrudes from the deflectable element over the device opening. A method for manufacturing the MEMS structure is also provided.
Opening claim text (preview).
What is claimed is: 1 . A microelectromechanical systems (MEMS) structure comprising: a first substrate having a dielectric layer arranged over the first substrate, wherein the dielectric layer includes a device opening; a second substrate arranged over and bonded to the first substrate through the dielectric layer, the second substrate including a deflectable element arranged over the device opening; and a stopper integrated with the second substrate and protruding from the deflectable element over the device opening. 2 . The MEMS structure according to claim 1 , wherein the second substrate, the deflectable element, and the stopper include silicon. 3 . The MEMS structure according to claim 1 , further including: a third substrate including a second device opening, wherein the third substrate is arranged over and bonded to the second substrate with the second device opening over the deflectable element. 4 . The MEMS structure according to claim 1 , wherein the stopper is arranged within a recess in the second substrate overlying the device opening. 5 . The MEMS structure according to claim 1 , further including: first bond pads arranged in the dielectric layer around the device opening; through silicon vias (TSVs) extending through the second substrate to the first bond pads; and second bond pads arranged over the second substrate and electrically coupled to the first bond pads through the TSVs. 6 . The MEMS structure according to claim 1 , further including: a sensing electrode arranged in the device opening and capacitively coupled to the deflectable element. 7 . The MEMS structure according to claim 6 , wherein the sensing electrode is arranged directly below the stopper. 8 . The MEMS structure according to claim 1 , wherein a footprint of the stopper is elliptical. 9 . The MEMS structure according to claim 1 , further including: a second stopper arranged in the device opening below the stopper and extending towards the deflectable element. 10 . A method for manufacturing a microelectromechanical systems (MEMS) structure, the method comprising: providing a first substrate having a dielectric layer arranged over the first substrate, wherein the dielectric layer includes a device opening; providing a second substrate; forming a stopper integrated with the second substrate; bonding the second substrate to the first substrate through the dielectric layer, wherein the stopper protrudes towards the first substrate from over the device opening; and forming a deflectable element in the second substrate over the device opening and the stopper. 11 . The method according to claim 10 , further including: recessing a central region of the second substrate around a stopper region to form the stopper. 12 . The method according to claim 10 , wherein the second substrate is silicon, and wherein the method further includes: forming the stopper of silicon, wherein the second substrate and the stopper are a continuous piece of silicon. 13 . The method according to claim 10 , further including: providing a third substrate having a second device opening; and bonding the third substrate over the second substrate with the second device opening over the deflectable element. 14 . The method according to claim 10 , further including: providing first bond pads arranged in the dielectric layer around the device opening; forming through silicon vias (TSVs) extending through the second substrate to the first bond pads; and forming second bond pads over the second substrate and electrically coupled to the first bond pads through the TSVs. 15 . The method according to claim 10 , further including: providing a sensing electrode in the device opening; and forming the stopper at a position laterally offset from the sensing electrode. 16 . The method according to claim 10 , further including: forming the stopper with a rectangular footprint. 17 . The method according to claim 10 , further including: forming a second stopper in the device opening below the stopper and extending towards the deflectable element. 18 . The method according to claim 10 , further including: forming a spring in the second substrate, the spring supporting the deflectable element over the device opening. 19 . The method according to claim 10 , further including: forming one of a MEMS microphone, a MEMS pressure sensor, and a MEMS motion sensor in the second substrate. 20 . A microelectromechanical systems (MEMS) structure comprising: an integrated circuit (IC) including a first substrate and a dielectric layer arranged over the first substrate, wherein the dielectric layer includes a device opening; a MEMS device including a second substrate arranged over and bonded to the first substrate through the dielectric layer, the second substrate including a deflectable element arranged over the device opening; and a stopper integrated with the second substrate and protruding from the deflectable element over the device opening, wherein the stopper and the second substrate are silicon.
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