Microelectromechanical systems (mems) stopper structure for stiction improvement

US2016167945A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2016167945-A1
Application numberUS-201414570282-A
CountryUS
Kind codeA1
Filing dateDec 15, 2014
Priority dateDec 15, 2014
Publication dateJun 16, 2016
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A microelectromechanical systems (MEMS) structure having a stopper integrated with a MEMS substrate is provided. A first substrate has a dielectric layer arranged over the first substrate. The dielectric layer includes a device opening. A second substrate is arranged over and bonded to the first substrate through the dielectric layer. The second substrate includes a deflectable element arranged over the device opening. A stopper is integrated with the second substrate and protrudes from the deflectable element over the device opening. A method for manufacturing the MEMS structure is also provided.

First claim

Opening claim text (preview).

What is claimed is: 1 . A microelectromechanical systems (MEMS) structure comprising: a first substrate having a dielectric layer arranged over the first substrate, wherein the dielectric layer includes a device opening; a second substrate arranged over and bonded to the first substrate through the dielectric layer, the second substrate including a deflectable element arranged over the device opening; and a stopper integrated with the second substrate and protruding from the deflectable element over the device opening. 2 . The MEMS structure according to claim 1 , wherein the second substrate, the deflectable element, and the stopper include silicon. 3 . The MEMS structure according to claim 1 , further including: a third substrate including a second device opening, wherein the third substrate is arranged over and bonded to the second substrate with the second device opening over the deflectable element. 4 . The MEMS structure according to claim 1 , wherein the stopper is arranged within a recess in the second substrate overlying the device opening. 5 . The MEMS structure according to claim 1 , further including: first bond pads arranged in the dielectric layer around the device opening; through silicon vias (TSVs) extending through the second substrate to the first bond pads; and second bond pads arranged over the second substrate and electrically coupled to the first bond pads through the TSVs. 6 . The MEMS structure according to claim 1 , further including: a sensing electrode arranged in the device opening and capacitively coupled to the deflectable element. 7 . The MEMS structure according to claim 6 , wherein the sensing electrode is arranged directly below the stopper. 8 . The MEMS structure according to claim 1 , wherein a footprint of the stopper is elliptical. 9 . The MEMS structure according to claim 1 , further including: a second stopper arranged in the device opening below the stopper and extending towards the deflectable element. 10 . A method for manufacturing a microelectromechanical systems (MEMS) structure, the method comprising: providing a first substrate having a dielectric layer arranged over the first substrate, wherein the dielectric layer includes a device opening; providing a second substrate; forming a stopper integrated with the second substrate; bonding the second substrate to the first substrate through the dielectric layer, wherein the stopper protrudes towards the first substrate from over the device opening; and forming a deflectable element in the second substrate over the device opening and the stopper. 11 . The method according to claim 10 , further including: recessing a central region of the second substrate around a stopper region to form the stopper. 12 . The method according to claim 10 , wherein the second substrate is silicon, and wherein the method further includes: forming the stopper of silicon, wherein the second substrate and the stopper are a continuous piece of silicon. 13 . The method according to claim 10 , further including: providing a third substrate having a second device opening; and bonding the third substrate over the second substrate with the second device opening over the deflectable element. 14 . The method according to claim 10 , further including: providing first bond pads arranged in the dielectric layer around the device opening; forming through silicon vias (TSVs) extending through the second substrate to the first bond pads; and forming second bond pads over the second substrate and electrically coupled to the first bond pads through the TSVs. 15 . The method according to claim 10 , further including: providing a sensing electrode in the device opening; and forming the stopper at a position laterally offset from the sensing electrode. 16 . The method according to claim 10 , further including: forming the stopper with a rectangular footprint. 17 . The method according to claim 10 , further including: forming a second stopper in the device opening below the stopper and extending towards the deflectable element. 18 . The method according to claim 10 , further including: forming a spring in the second substrate, the spring supporting the deflectable element over the device opening. 19 . The method according to claim 10 , further including: forming one of a MEMS microphone, a MEMS pressure sensor, and a MEMS motion sensor in the second substrate. 20 . A microelectromechanical systems (MEMS) structure comprising: an integrated circuit (IC) including a first substrate and a dielectric layer arranged over the first substrate, wherein the dielectric layer includes a device opening; a MEMS device including a second substrate arranged over and bonded to the first substrate through the dielectric layer, the second substrate including a deflectable element arranged over the device opening; and a stopper integrated with the second substrate and protruding from the deflectable element over the device opening, wherein the stopper and the second substrate are silicon.

Assignees

Inventors

Classifications

  • Devices controlled by mechanical forces, e.g. pressure · CPC title

  • B81B3/001Primary

    Structures having a reduced contact area, e.g. with bumps or with a textured surface · CPC title

  • for reducing stress inside of the package structure · CPC title

  • B81B3/0051Primary

    For defining the movement, i.e. structures that guide or limit the movement of an element (mechanical arrangements for preventing or damping vibration or shock H01H3/60) · CPC title

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What does patent US2016167945A1 cover?
A microelectromechanical systems (MEMS) structure having a stopper integrated with a MEMS substrate is provided. A first substrate has a dielectric layer arranged over the first substrate. The dielectric layer includes a device opening. A second substrate is arranged over and bonded to the first substrate through the dielectric layer. The second substrate includes a deflectable element arranged…
Who is the assignee on this patent?
Taiwan Semiconductor Mfg Co Ltd
What technology area does this patent fall under?
Primary CPC classification B81B3/001. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Thu Jun 16 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).