Electronic apparatus and charge control method
US-2016036258-A1 · Feb 4, 2016 · US
US2016164013A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016164013-A1 |
| Application number | US-201414908033-A |
| Country | US |
| Kind code | A1 |
| Filing date | Sep 30, 2014 |
| Priority date | Sep 30, 2013 |
| Publication date | Jun 9, 2016 |
| Grant date | — |
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Provided are a substrate for an OED, a method of manufacturing the same, and a use thereof. The substrate includes a flexible base film and an inorganic material layer, and the inorganic material layer includes a multilayer structure of at least two thin layers. Such an inorganic material layer may have an excellent physical property, for example, a barrier property, by inhibiting crystallinity. In addition, by employing the multilayer structure, an inorganic material layer having a physical property which is difficult to be realized by a conventional inorganic material layer, for example, a high refractive index, in addition to the barrier property may be formed.
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What is claimed is: 1 . A substrate for an organic electronic device (OED), comprising: a flexible base film; and an inorganic material layer formed on the base film and including a stack structure of first and second sub layers each having a thickness of 7 nm or less. 2 . The substrate according to claim 1 , wherein the base film has a haze of 3 to 30%. 3 . The substrate according to claim 1 , wherein the base film has a refractive index with respect to light having a wavelength of 550 nm of 1.7 or more. 4 . The substrate according to claim 3 , wherein the inorganic material layer has a thickness of 10 to 100 nm. 5 . The substrate according to claim 1 , wherein the inorganic material layer and the base film have a difference in refractive index of 1 or less. 6 . The substrate according to claim 1 , wherein the inorganic material layer does not include a layer having a thickness of more than 7 nm. 7 . The substrate according to claim 1 , wherein the first sub layer and the second sub layer are stacked in contact with each other, and are different oxide layers, nitride layers, or oxynitride layers, respectively. 8 . The substrate according to claim 1 , wherein the inorganic material layer further includes a third sub layer different from the first and second sub layers. 9 . The substrate according to claim 1 , wherein the first sub layer has a refractive index with respect to a wavelength of 550 nm of 1.4 to 1.9, and the second sub layer has a refractive index with respect to a wavelength of 550 nm of 2.0 to 2.6. 10 . The substrate according to claim 1 , wherein the inorganic material layer has a thickness of 10 to 300 nm. 11 . The substrate according to claim 1 , wherein the inorganic material layer has a refractive index with respect to a wavelength of 550 nm of 1.8 to 2.2. 12 . The substrate according to claim 1 , which has a water vapor transmission rate (WVTR) of 10 −6 to 10 −3 g/m 2 /day. 13 . An organic electronic device (OED), comprising: the substrate for an OED of claim 1 ; and a device region having a first electrode layer, an organic material layer, and a second electrode layer, and present on an inorganic material layer of the substrate. 14 . A light source for a display, comprising: the OED of claim 13 . 15 . A lighting device, comprising: the OED of claim 13 . 16 . A method of manufacturing a substrate for an OED, comprising: forming an inorganic material layer by forming a stack structure of first and second sub layers each having a thickness of 7 nm or less on a flexible base film. 17 . The method according to claim 16 , wherein the stack structure of the first and second sub layers is formed by forming a first sub layer on a base film, and forming a second sub layer having a different material from that of the first sub layer on the first sub layer. 18 . The method according to claim 16 , wherein the inorganic material layer is formed to have a refractive index with respect to a wavelength of 550 nm of 1.8 to 2.2. 19 . The method according to claim 16 , wherein the inorganic material layer is formed by atomic layer deposition (ALD).
Flexural strength; Flexion stiffness · CPC title
Non-permeable · CPC title
Dimensional properties · CPC title
Electrical equipment · CPC title
next to another layer of {the same or of} a {different material (next to a glass layer B32B17/067)} · CPC title
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