Method of manufacturing zinc oxide nanosheet structure, and electronic apparatus and touch sensor apparatus having the zinc oxide nanosheet structure

Patent metadata

Field	Value
Publication number	US-2016162104-A1
Application number	US-201514919169-A
Country	US
Kind code	A1
Filing date	Oct 21, 2015
Priority date	Oct 23, 2014
Publication date	Jun 9, 2016
Grant date	—

Abstract

Disclosed herein is a method of manufacturing a zinc oxide nanosheet structure. The zinc oxide nanosheet structure may be manufactured by forming a zinc oxide seed on a substrate and growing zinc oxide from the zinc oxide seed in a zinc oxide growth solution in which zinc precursors and a doping-element-containing compound are dissolved.

First claim

What is claimed is:

1 . A method of manufacturing a zinc oxide nanosheet structure, comprising:
forming a zinc oxide seed on a substrate; and forming the zinc oxide nanosheet structure on the substrate by growing zinc oxide from the zinc oxide seed in a zinc oxide growth solution in which first zinc precursors and a doping-element-containing compound are dissolved.

2 . The method of claim 1 , wherein the zinc oxide seed is formed by applying a seed forming solution in which second zinc precursors are dissolved to the substrate and performing heat treatment thereon.

3 . The method of claim 2 , wherein the zinc oxide seed is formed by performing a plurality of times a process of applying and thermally treating the seed forming solution.

4 . The method of claim 2 , wherein the first zinc precursors and the second zinc precursors each independently comprise one or more compounds selected from the group consisting of zinc chloride (ZnCl 2 ), zinc sulfate (ZnSO 4 ), zinc nitrate (Zn(NO 3 ) 2 ), zinc acetate (Zn(CH 3 CO 2 ) 2 ), zinc citrate (Zn 3 [O 2 CCH 2 C(OH)(CO 2 )CH 2 CO 2 ] 2 ), zinc oxalate (ZnC 2 O 4 ), zinc perchlorate (Zn(ClO 4 ) 2 ), zinc tetrafluoroborate (Zn(BF 4 ) 2 ), zinc p-toluenesulfonate (Zn(CH 3 C 6 H 4 SO 3 ) 2 ), zinc trifluoroacetate (Zn(CF 3 COO) 2 ) or hydrates thereof.

5 . The method of claim 2 , wherein the heat treatment is performed at a temperature from about 100 to about 200° C.

6 . The method of claim 1 , wherein the doping-element-containing compound comprises a metal element which forms metal hydroxide ions negatively charged in the zinc oxide growth solution.

7 . The method of claim 6 , wherein the metal element comprises one or more selected from the group consisting of vanadium (V), manganese (Mn), cobalt (Co), chrome (Cr), nickel (Ni), iron (Fe), copper (Cu), aluminum (Al), tin (Sn), scandium (Sc), and titanium (Ti).

8 . The method of claim 6 , wherein the metal element comprises a transition metal element which has oxygen-coupling strength greater than that of zinc and has a smaller radius than that of zinc ions when ionized.

9 . The method of claim 8 , wherein the transition metal element comprises one or more selected from the group consisting of V, Mn, Co, Cr, Ni, Fe, Cu, Sc, and Ti.

10 . The method of claim 1 , wherein an amine compound is further dissolved in the zinc oxide growth solution, and
wherein the amine compound comprises one or more selected from the group consisting of hexamethyleneamine, hexamethylenetetramine (HMT), cyclohexylamine, monoethanolamine, diethanolamine, and triethanolamine.

11 . The method of claim 1 , wherein the zinc oxide is grown by heating the zinc oxide growth solution at a temperature from about 90 to about 100° C. for from about 2 to about 4 hours.

12 . An electronic apparatus comprising:
a lower electrode; an upper electrode disposed to be spaced apart from the lower electrode; and a zinc oxide nanosheet structure which comprises a zinc oxide lattice, a metal element which dopes an inside of the lattice, and hydroxide ions of the doping metal coupled with at least part of outermost zinc ions of the zinc oxide lattice and is disposed between the lower electrode and the upper electrode.

13 . The electronic apparatus of claim 12 , wherein the lower electrode and the upper electrode each independently comprise one or more selected from the group consisting of gold (Au), platinum (Pt), palladium (Pd), a Pd—Au alloy (PdAu), Ni, an Ni—Au alloy (NiAu), ruthenium (Ru), silver (Ag), Cu, zinc (Zn), Ti, a Ti—Au alloy (TiAu), Al, indium tin oxide (ITO), fluorine-doped tin oxide (FTO), gallium zinc oxide (GZO), carbon nanotubes (CNT), and graphene.

14 . The electronic apparatus of claim 12 , further comprising:
a lower substrate disposed below the lower electrode; and an upper substrate disposed above the upper electrode, wherein the lower electrode is formed on a top surface of the lower substrate and the upper electrode is formed on a bottom surface of the upper substrate.

15 . The electronic apparatus of claim 14 , wherein the lower substrate and the upper substrate each independently comprise one or more selected from the group consisting of a polymer substrate, a paper substrate, a glass substrate, a sapphire substrate, a silicon substrate, and a ceramic substrate.

16 . The electronic apparatus of claim 12 , wherein the metal element comprises one or more selected from the group consisting of V, Mn, Co, Cr, Ni, Fe, Cu, Al, Sn, Sc, and Ti.

17 . The electronic apparatus of claim 12 , wherein the metal element comprises a transition metal element which has oxygen-coupling strength greater than that of zinc and has a smaller radius than that of zinc ions when ionized.

18 . The electronic apparatus of claim 17 , wherein the transition metal element comprises one or more selected from the group consisting of V, Mn, Co, Cr, Ni, Fe, Cu, Sc, and Ti.

19 . The electronic apparatus of claim 12 , wherein the zinc oxide nanosheet structure comprises atoms of the metal and zinc atoms at a mole ratio from about 1:20 to about 1:30.

20 . The electronic apparatus of claim 12 , wherein the electronic apparatus is a power generation apparatus, and
wherein the electronic apparatus further comprises a power storage apparatus electrically connected to the lower electrode and the upper electrode.

21 . A touch sensor apparatus comprising:
a lower electrode which comprises a plurality of first electrode patterns which extend in a first direction and are mutually spaced apart and is disposed above a lower substrate; an upper electrode which comprises a plurality of second electrode patterns which extend in a second direction orthogonal to the first direction and are mutually spaced apart and is disposed below an upper substrate which faces the lower substrate; and a plurality of zinc oxide nanosheet structures which are disposed between the lower electrode and the upper electrode, each comprise a bottom end in contact with one of the first electrode patterns and a top end in contact with all of the second electrode patterns, and are mutually spaced apart.

22 . The touch sensor apparatus of claim 21 , wherein the zinc oxide nanosheet structures each comprise a zinc oxide lattice, a metal element which dopes an inside of the lattice, and hydroxide ions of the doping metal coupled with at least part of outermost zinc ions of the zinc oxide lattice.

Assignees

• Univ Sungkyunkwan Res & Bus

Inventors

• Kim Sang-Woo
• Lee Keun-Young
• Lee Ju-Hyuck

Classifications

• G06F2203/04103

  Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices · CPC title

• Y10S977/811

  Of specified metal oxide composition, e.g. conducting or semiconducting compositions such as ITO, ZnOx · CPC title

• G06F3/047 Primary

  using sets of wires, e.g. crossed wires · CPC title

• Y10S977/755

  Nanosheet or quantum barrier/well, i.e. layer structure having one dimension or thickness of 100 nm or less · CPC title

• H01L41/0477

  Electricity · mapped topic