Silicon carbide powder and method for producing silicon carbide single crystal

Patent metadata

Field	Value
Publication number	US-2016160386-A1
Application number	US-201314908307-A
Country	US
Kind code	A1
Filing date	Nov 27, 2013
Priority date	Jul 31, 2013
Publication date	Jun 9, 2016
Grant date	—

Abstract

A silicon carbide powder which, when used as a raw material in a sublimation recrystallization method, enables improvement in productivity of a silicon carbide single crystal by exhibiting a high sublimation rate and allowing a small amount of silicon carbide to remain without being sublimated, and enables an increase in size of the silicon carbide single crystal (for example, a single crystal wafer). The silicon carbide powder has a Blaine specific surface area of from 250 cm 2 /g to 1,000 cm 2 /g and a ratio of a silicon carbide powder having a particle size of more than 0.70 mm and 3.00 mm or less of 50 vol % or more with respect to a total amount of the silicon carbide powder. When a silicon carbide powder accommodated in a crucible is heated to be sublimated, a silicon carbide single crystal is formed on a seed crystal provided on an undersurface of a lid.

First claim

1 . A silicon carbide powder, having a Blaine specific surface area of from 250 cm2/g to 1,000 cm2/g and having a ratio of a silicon carbide powder having a particle size of more than 0.70 mm and 3.00 mm or less of 50 vol % or more with respect to a total amount of the silicon carbide powder.

2 . The silicon carbide powder according to claim 1 , wherein the silicon carbide powder comprises aggregated particles of primary particles having a ratio of particles each having a particle size of 1 μm or more and 1 mm or less of 90 vol % or more.

3 . The silicon carbide powder according to claim 1 , wherein the silicon carbide powder is a powder formed of α-type silicon carbide, a powder formed of (β-type silicon carbide, or a powder formed of a mixture of α-type silicon carbide and β-type silicon carbide.

4 - 6 . (canceled)

7 . The silicon carbide powder according to claim 2 , wherein the silicon carbide powder is a powder formed of α-type silicon carbide, a powder formed of β-type silicon carbide, or a powder formed of a mixture of α-type silicon carbide and β-type silicon carbide.

8 . A method of producing a silicon carbide single crystal, the method comprising growing a silicon carbide single crystal on a silicon carbide seed crystal by a sublimation recrystallization method through use of the silicon carbide powder according to claim 1 as a raw material.

9 . The method of producing a silicon carbide single crystal according to claim 8 , wherein the silicon carbide powder comprises aggregated particles of primary particles having a ratio of particles each having a particle size of 1 μm or more and 1 mm or less of 90 vol % or more.

10 . The method of producing a silicon carbide single crystal according to claim 8 , wherein the silicon carbide powder is a powder formed of α-type silicon carbide, a powder formed of β-type silicon carbide, or a powder formed of a mixture of α-type silicon carbide and β-type silicon carbide.

11 . The method of producing a silicon carbide single crystal according to claim 9 , wherein the silicon carbide powder is a powder formed of α-type silicon carbide, a powder formed of β-type silicon carbide, or a powder formed of a mixture of α-type silicon carbide and β-type silicon carbide.

12 . The method of producing a silicon carbide single crystal according to claim 8 , wherein the growing of the silicon carbide single crystal is done by growing the silicon carbide single crystal on the silicon carbide seed crystal provided on an undersurface of a lid of a crucible by accommodating the silicon carbide powder in the crucible so that the silicon carbide powder has a bulk density of from 0.7 g/cm 3 to 1.4 g/cm 3 , followed by heating.

13 . The method of producing a silicon carbide single crystal according to claim 8 , wherein the growing of the silicon carbide single crystal is done by growing the silicon carbide single crystal on the silicon carbide seed crystal provided on an undersurface of a lid of a crucible by accommodating the silicon carbide powder in the crucible so that the silicon carbide powder has a thermal conductivity of from 0.05 W/m·K to 0.15 W/m·K, followed by heating.

14 . The method of producing a silicon carbide single crystal according to claim 12 , wherein the growing of the silicon carbide single crystal is done by growing the silicon carbide single crystal on the silicon carbide seed crystal provided on an undersurface of a lid of a crucible by accommodating the silicon carbide powder in the crucible so that the silicon carbide powder has a thermal conductivity of from 0.05 W/m·K to 0.15 W/m·K, followed by heating.

Assignees

• Taiheiyo Cement Corp
• Nat Inst Of Advanced Ind Scien

Inventors

• Masuda Kenta
• Ichitsubo Kouki
• Suzuki Masakazu
• Nonaka Kiyoshi
• Kato Tomohisa
• Tanaka Hideaki

Classifications

• C01B32/97

  Preparation from SiO or SiO2 · CPC title

• C01P2006/12

  Surface area · CPC title

• C30B23/00

  Single-crystal growth by condensing evaporated or sublimed materials · CPC title

• C30B29/36

  Carbides · CPC title

• C01P2004/60

  Particles characterised by their size · CPC title