Wiring Substrate
US-2015311154-A1 · Oct 29, 2015 · US
Through-substrate structure and mehtod for fabricating the same
US2016155685A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016155685-A1 |
| Application number | US-201414556215-A |
| Country | US |
| Kind code | A1 |
| Filing date | Nov 30, 2014 |
| Priority date | Nov 30, 2014 |
| Publication date | Jun 2, 2016 |
| Grant date | — |
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- Title
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- Abstract
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- First independent claim
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Abstract
Official abstract text for this publication.
A method for fabricating through-substrate structure is disclosed. The method includes the steps of: providing a substrate; forming a through-substrate hole and a through-substrate trench in the substrate; and forming a metal layer in the through-substrate hole and the through-substrate trench for forming a through-substrate via and a through-substrate conductor having a void therein.
First claim
Opening claim text (preview).
1 . A method for fabricating through-substrate structure, comprising: providing a substrate; forming a through-substrate hole and a through-substrate trench in the substrate; and forming a metal layer in the through-substrate hole and the through-substrate trench for forming a through-substrate via and a through-substrate conductor having a void therein. 2 . The method of claim 1 , further comprising performing a deep reactive ion etch (DRIE) process for forming the through-substrate hole and the through-substrate trench. 3 . The method of claim 2 , wherein each of the through-substrate hole and the through-substrate trench comprises sidewall scallops. 4 . The method of claim 2 , wherein the through-substrate hole comprises straight surface profile and the through-substrate trench comprises sidewall scallops. 5 . The method of claim 1 , wherein the through-substrate trench surrounds the through-substrate hole. 6 . The method of claim 1 , wherein the through-substrate trench surrounds the through-substrate hole according a circular shape or rectangular shape. 7 . The method of claim 1 , wherein the depth of the through-substrate hole is greater than the depth of the through-substrate trench. 8 . The method of claim 1 , wherein the metal layer comprises copper. 9 . A through-substrate structure, comprising: a through-substrate conductor in a substrate, wherein the through-substrate conductor comprises a void and the void is substantially vacant and a bottom surface of the through-substrate conductor contacts the substrate directly. 10 . The through-substrate structure of claim 9 , further comprising: a through-substrate via in the substrate, wherein the through-substrate via is surrounded by the through-substrate conductor. 11 . The through-substrate structure of claim 10 , wherein each of the through-substrate conductor and the through-substrate via comprises sidewall scallops. 12 . The through-substrate structure of claim 10 , wherein the through-substrate conductor surrounds the through-substrate via according to a circular shape or rectangular shape. 13 . The through-substrate structure of claim 10 , wherein the through-substrate via comprises a seed layer enclosing no void therein. 14 . The through-substrate structure of claim 13 , wherein the seed layer comprises copper. 15 . A through-substrate structure, comprising: a through-substrate conductor in a substrate, wherein the through-substrate conductor comprises a seed layer enclosing a void therein and a metal layer on the seed layer. 16 . The through-substrate structure of claim 15 , further comprising: a through-substrate via in the substrate, wherein the through-substrate via is surrounded by the through-substrate conductor. 17 . The through-substrate structure of claim 16 , wherein each of the through-substrate conductor and the through-substrate via comprises sidewall scallops. 18 . The through-substrate structure of claim 16 , wherein the through-substrate conductor surrounds the through-substrate via according to a circular shape or rectangular shape. 19 . The through-substrate structure of claim 16 , wherein the through-substrate via comprises the seed layer enclosing no void therein. 20 . The through-substrate structure of claim 19 , wherein the seed layer comprises copper.
Assignees
Inventors
Classifications
comprising use of blind vias during the manufacture · CPC title
Top-view shapes · CPC title
comprising ring-shaped isolation structures outside of the via holes · CPC title
Barrier, adhesion or liner layers · CPC title
of dielectric parts comprising air gaps · CPC title
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Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US2016155685A1 cover?
- A method for fabricating through-substrate structure is disclosed. The method includes the steps of: providing a substrate; forming a through-substrate hole and a through-substrate trench in the substrate; and forming a metal layer in the through-substrate hole and the through-substrate trench for forming a through-substrate via and a through-substrate conductor having a void therein.
- Who is the assignee on this patent?
- United Microelectronics Corp
- What technology area does this patent fall under?
- Primary CPC classification H10W20/20. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Jun 02 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).