Ceramic dielectric films, method for making ceramic dielectric films

Patent metadata

Field	Value
Publication number	US-2016153084-A1
Application number	US-201414489153-A
Country	US
Kind code	A1
Filing date	Sep 17, 2014
Priority date	Sep 17, 2014
Publication date	Jun 2, 2016
Grant date	—

Abstract

The invention provides a dielectric-conductive substrate construct comprising a conductive material having a first surface and a second surface, and a dielectric film directly contacting the first surface and substantially covering the first surface, wherein the second surface is exposed to the ambient environment. Also provided is a method for producing a two component dielectric-conductive substrate, the method comprising supplying a base metal; and directly contacting a ceramic to the base metal to form a ceramic-metal interface while simultaneously preventing the formation of electrically insulative layers at the interface.

First claim

The embodiment of the invention in which an exclusive property or privilege is claimed is defined as follows:

1 . A dielectric-conductive substrate construct comprising:
a. a conductive material having a first surface and a second surface; b. a dielectric film directly contacting the first surface and substantially covering the first surface, wherein the second surface is exposed to the ambient environment.

2 . The construct as recited in claim 1 wherein the dielectric is a ceramic selected from the group consisting of PLZT, PZT, BaTiO 3 , (Ba,Sr)TiO 3 , and combinations thereof.

3 . The construct as recited in claim 1 wherein the conductive material comprises a flexible substrate selected from the group consisting of metal, nonmetal material, amorphous material, crystalline material, and combinations thereof.

4 . The construct as recited in claim 1 wherein the conductive material comprises a continuous, elongated electrically conductive substrate with portions of the electrically conductive substrate removably received by a flexible support surface.

5 . The construct as recited in claim 1 wherein the construct contains no interposed oxides between the substrate and the dielectric layer.

6 . The construct as recited in claim 1 wherein the dielectric film is thermally fused to the conductive material.

7 . The construct as recited in claim 1 wherein the dielectric film adheres to the conductive material.

8 . A method for producing a two-component dielectric construct, the method comprising:
a. supplying a base metal; and b. directly contacting a ceramic to the base metal to form a ceramic-metal interface while simultaneously preventing the formation of electrically insulative layers at the interface.

9 . The method as recited in claim 8 wherein the layers comprise materials selected from the group consisting of nonferrous compounds, ferrous compounds, oxides, nitrides, and combinations thereof.

10 . The method as recited in claim 8 wherein the ceramic is produced and provided having a single phase PLZT crystalline structure.

11 . The method as recited in claim 8 wherein the base metal is aluminum, and the dielectric is PLZT.

12 . The method as recited in claim 8 wherein the ceramic is applied as a powder to the base metal with a force to generate thermal energy at the surface of the base metal sufficient to cause the ceramic powder to coelesce and adhere to the metal.

13 . The method as recited in claim 12 wherein the ceramic is applied to the base metal at room temperature via aerosol deposition.

14 . The method as recited in claim 8 wherein the ceramic is contacted to the base metal at an impact velocity of greater than approximately 100 meters per second.

15 . The method as recited in claim 8 wherein ceramic powder is contacted to the base metal so as to generate a thermal energy at the ceramic metal interface in an amount sufficient to cause the ceramic powder to fuse together.

16 . The method as recited in claim 8 wherein the ceramic is contacted to the base metal at a velocity sufficient to cause the ceramic to fuse to the base metal.

Assignees

• Ma Beihai
• Balachandran Uthamalingam
• Dorris Stephen E
• Lee Tae H
• Uchicago Argonne Llc

Inventors

• Ma Beihai
• Balachandran Uthamalingam
• Dorris Stephen E
• Lee Tae H

Classifications

• C23C14/06

  characterised by the coating material ({C23C14/0021} , C23C14/04 take precedence) · CPC title

• C23C14/22 Primary

  characterised by the process of coating · CPC title

• C23C24/04 Primary

  Impact or kinetic deposition of particles · CPC title

• C01G23/003

  Titanates (C01G23/001 takes precedence) · CPC title