Semiconductor laser and optical integrated light source including the same

Patent metadata

Field	Value
Publication number	US-2016149379-A1
Application number	US-201514865911-A
Country	US
Kind code	A1
Filing date	Sep 25, 2015
Priority date	Sep 30, 2014
Publication date	May 26, 2016
Grant date	—

Abstract

A semiconductor laser according to the present invention includes an active layer, a guide layer laminated on the active layer, a diffraction grating formed along a light emission direction in the guide layer, an upper electrode provided above the guide layer, and a lower electrode provided below the active layer. The diffraction grating includes a current-injection diffraction grating and current-non-injection diffraction gratings provided both in front of and in back of the current-injection diffraction grating. Phase shifters are individually provided at a central portion of the current-injection diffraction grating and at boundaries between the current-injection diffraction grating and the current-non-injection diffraction gratings. The upper electrode is provided above the current-injection diffraction grating and is not provided above the current-non-injection diffraction gratings.

First claim

What is claimed is:

1 . A semiconductor laser, comprising:
an active layer; a guide layer laminated on said active layer; a diffraction grating formed along a light emission direction in said guide layer; an upper electrode provided above said guide layer; and a lower electrode provided below said active layer, wherein said diffraction grating includes:
a current-injection diffraction grating; and
current-non-injection diffraction gratings provided both in front of and in back of said current-injection diffraction grating,
phase shifters are individually provided at a central portion of said current-injection diffraction grating and at boundaries between said current-injection diffraction grating and said current-non-injection diffraction gratings, and said upper electrode is provided above said current-injection diffraction grating and is not provided above said current-non-injection diffraction gratings.

2 . The semiconductor laser according to claim 1 , wherein a product of a length of each of said current-non-injection diffraction gratings and a coupling coefficient of the diffraction grating is 0.135 or less.

3 . The semiconductor laser according to claim 1 , wherein said phase shifter comprises a λ/4 phase shifter.

4 . The semiconductor laser according to claim 1 , wherein both end surfaces of said diffraction grating are cleaved, and said both end surfaces are covered with anti-reflection coatings.

5 . An optical integrated light source, comprising:
a semiconductor laser; an optical modulator that is disposed at an output side of said semiconductor laser and modulates an intensity or a phase of a light output from said semiconductor laser; and a semiconductor optical amplifier that amplifies the light output from said optical modulator, wherein said optical integrated light source is capable of controlling an amplification factor of said semiconductor optical amplifier, said semiconductor laser includes:
an active layer;
a guide layer laminated on said active layer;
a diffraction grating formed along a light emission direction in said guide layer;
an upper electrode provided above said guide layer; and
a lower electrode provided below said active layer,
said diffraction grating includes:
a current-injection diffraction grating; and
current-non-injection diffraction gratings provided both in front of and in back of said current-injection diffraction grating,
phase shifters are individually provided at a central portion of said current-injection diffraction grating and at boundaries between said current-injection diffraction grating and said current-non-injection diffraction gratings, and said upper electrode is provided above said current-injection diffraction grating and is not provided above said current-non-injection diffraction gratings.

6 . An optical integrated light source, comprising:
a plurality of semiconductor lasers; a plurality of optical waveguides individually connected to outputs of said plurality of semiconductor lasers; an optical multiplexing circuit that is connected to said plurality of optical waveguides and multiplexes laser lights that have propagated through said plurality of optical waveguides; an output waveguide that propagates a light output from said optical multiplexing circuit; and a semiconductor optical amplifier connected to said output waveguide, wherein said optical integrated light source is capable of controlling an amplification factor of said semiconductor optical amplifier, each of said plurality of semiconductor lasers includes:
an active layer;
a guide layer laminated on said active layer;
a diffraction grating formed along a light emission direction in said guide layer;
an upper electrode provided above said guide layer; and
a lower electrode provided below said active layer,
said diffraction grating includes:
a current-injection diffraction grating; and
current-non-injection diffraction gratings provided both in front of and in back of said current-injection diffraction grating,
phase shifters are individually provided at a central portion of said current-injection diffraction grating and at boundaries between said current-injection diffraction grating and said current-non-injection diffraction gratings, and said upper electrode is provided above said current-injection diffraction grating and is not provided above said current-non-injection diffraction gratings.

Assignees

• Mitsubishi Electric Corp

Inventors

• Gotoda Mitsunobu
• Takabayashi Masakazu

Classifications

• H01S5/04256

  characterised by the configuration · CPC title

• H01S5/0268

  Integrated waveguide grating router, e.g. emission of a multi-wavelength laser array is combined by a "dragon router" · CPC title

• H01S5/0287

  Facet reflectivity · CPC title

• H01S5/0265

  Intensity modulators (intra-cavity modulators H01S5/0625) · CPC title

• H01S5/50

  Amplifier structures not provided for in groups H01S5/02 - H01S5/30 · CPC title